商业方法相关专利申请的客体问题探讨

随着计算机和网络技术的发展,依托互联网实现商业运营的申请日益增多.由于涉及计算机和网络技术的申请本身在客体判断上一直是审查工作中的一大重点和难点,通过对几种典型案例深入分析,给出商业方法相关专利申请在客体问题判断方面的审查思路和建议,以期提高审查效率,避免审查标准不一致.     

电视广告专利保护客体浅析

随着电视广告的运行、实现模式曾出不穷,相关的专利申请近年来也呈现明显的上升趋势,但很多申请在审查过程中未能通过保护客体的审查.通过典型案例,分析涉及电视广告的解决方案是否属于专利保护客体的问题,给出了判断原则和具体判断方式,为相关行业的专利申请和审查实践提供一定的借鉴意义.     

图像领域涉及客体问题的案例分析

专利申请首先要满足可授予专利权的客体才有可能被授予专利权.在深入剖析涉及客体问题的法条的基础上,以实际案例为依据详细分析了图像领域所涉及的多种客体问题缺陷,并对相关争议的焦点进行了解释,以帮助申请人了解在图像领域中发明专利关于客体问题缺陷的审查原则.     

语音领域涉及算法的专利申请的客体审查

语音领域的发明专利申请主要涉及语音分析或合成、语音识别、音频分析或处理,尤其是一些大学、科研院所的申请大多涉及数学理论和识别方法、换算方法,有些发明点就在于数学公式、建模的模型。在撰写时权利要求书中的客体缺陷很容易被忽略,从而导致申请无法被授权的情形,通过引用实际案例,具体分析语音领域涉及算法的专利申请的客体审查,希望对撰写此类专利申请提供帮助。     

涉及语音翻译合成方法与装置的专利申请审查

涉及语音翻译合成的专利申请主要包括合成方法、翻译规则以及计算机技术。近年来该类申请尤其是国内的申请量越来越多,而在此类申请的审查中,判断其是否属于专利法保护的客体一直是热点和难点问题,各方观点也存在很多争议。通过引用实际案例,具体分析该类申请的客体问题的审查,希望在撰写此类专利申请时提供帮助。     

涉及计算机图形的发明专利保护客体的研究

主要研究涉及计算机图形的发明专利保护客体问题,在对计算机图形技术的分析以及涉及的专利保护客体的相关法条的深入理解的基础上,结合实际案例的审查过程,总结与计算机图形相关的专利申请中涉及客体问题的典型缺陷,阐明判断客体问题所涉及的主要因素。研究对于与计算机图形相关的权利要求的撰写及修改有一定的指导和借鉴意义。     

欧专局关于发明技术属性判断对中国审查的启示

对专利申请审查中保护客体的审查方式进行了探讨,包括欧洲与中国关于专利保护客体的判断标准,比较了国内与欧洲在该问题上的处理方式的异同.基于上述比较的基础上,分析了国内客体审查方式中存在的问题以及提供了改进的方向.     

浅析通信领域中实用新型专利申请的撰写要求

介绍了实用新型保护客体的基本概念和其在通信领域所具备的特殊性,结合了具体审查案例,分析申请人撰写不同类型申请的具体要求,其中对涉及计算机程序的申请进行了详细分析,使得专利申请满足撰写要求而被授予实用新型专利权.     

语音识别领域计算机程序或算法专利申请审查

近年来,语音识别领域的专利申请中涉及计算机程序或算法的专利申请逐年增多。由于涉及计算机程序或算法的发明专利申请的审查具有一定的特殊性,计算机程序的实现离不开算法或者逻辑运算,这类申请往往会涉及是否属于专利保护的客体的判断的问题。如果涉案专利不属于专利保护的客体,将不能获得专利权。首先对涉及计算机程序的发明专利申请的审查基准进行分析;然后,特别针对语音识别领域中涉及计算机程序或算法的典型案例的审查过程进行分析;最后,总结出哪些形式的申请是有望获得专利权的,而哪些形式的申请是难于获得专利权的。从而,对这类特殊的专利申请的注意事项给出明确的指导。     

图像通信领域实用新型保护客体研究

【摘 要】随着图像通信技术的持续快速发展,该领域实用新型申请数量不断增加,文章主要研究涉及计算机程序的图像通信领域实用新型保护客体,从相关法规及审查过程入手,通过对审查实践中的典型案例进行分析,给出申请人预判授权前景以及答复审查意见时可供参考的几点建议,希望对涉及计算机程序的图像通信领域实用新型申请人有所帮助。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.