大面积多壁碳纳米管薄膜光电响应实验

为了研究大面积多壁碳纳米管(MWNTs)的光电响应特性,利用剥离技术和旋涂法制备了大 面积MWNTs薄膜器件;采用532nm激光作为激励光源,当激光照射薄 膜器件不同位置时,测试其光电流和光电 压。实验结果表明,激光诱导产生的光电流/电压与光照位置有关,当光照位置在器件两端 时,光电流、光电压 最大,两端的光电流分别为0.04μA、－0.06μA和光电压分别为0.04mV、－0.06mV; 当激光照射在器件几 何中心时,光电流、光电压趋于0。分析表明,光热电效应是光电流、电压产生和变化的主 要原因。     

Si基Ge波导共振腔增强型光电探测器的制备和特性研究

采用低温缓冲层技术,在硅(Si)衬底上生长了质量 优良的锗(Ge)薄膜。Ge层受到由于Si和Ge热膨胀系数不同引入张应变,大小约为0. 16%。以 外延的Ge层作为吸收区,前后以Ge/空气作为分布布拉格反射镜(DBR),在Si基上制备波导共 振腔增强 型(RCE)光电探测器。测试表明,器件在－1V偏压下,暗电流密度为14.9mA/cm²;在零偏压下, 器件的响应光谱在1.3~1.6μm波长范围内观察到4个共振增强峰,分 别位于1.35、 1.50μm,光响应波长范围扩展到1.6μm以上,采用传输矩阵法模拟的 响应光谱与实验测得结果近似吻合;在1.55μm入射光的照射下,测 得光响应度为21.4mA/W。     

基于silica波导光栅的单纤三向器的混合集成研究

通过有源实时监控系统,采用手动和自动相结合的方法,将光纤、silica基阵列波导光栅(AWG)、1310nm激光器(LD)平台和1490nm、1550nm探测器(PD)平台用紫外固化胶混合集成为一新型单纤三向器。在耦合集成过程中,LD在15mA偏置电流下,三向器的上行出纤功率大约为-4dBm,LD和波导的耦合效率大约40%;当三向器输入1550nm光功率为1mW,PD在2.6V反向偏压下,下行输出光电流大约为76μA,波导和PD的耦合效率大约为42%。三向器中采用了对管PD集成方法。     

PMMA-CsPbBr3薄膜的结构及光电特性

CsPbBr3是一种直接带隙宽禁带半导体,具有优异的光电性能。采用喷雾法制备了不同质量分数的聚甲基丙烯酸甲酯(PMMA)-CsPbBr3薄膜。利用原子力显微镜(AFM)和扫描电子显微镜(SEM)研究了PMMA质量分数对PMMA-CsPbBr3薄膜表面形貌的影响,利用X射线衍射(XRD)对其结构进行了表征,同时还测量了材料的透射率并给出了光致发光(PL)图像,最后制成了PMMA-CsPbBr3/Au异质结型光电探测器,研究了它们的光电特性。结果表明:掺入PMMA可以显著改善PMMA-CsPbBr3薄膜表面形貌,随着加入PMMA的质量分数的增大,CsPbBr3薄膜的表面粗糙度明显下降,均方根粗糙度从311 nm降低到69.2 nm;同时PMMACsPbBr3薄膜是择优取向的;与纯CsPbBr3薄膜相比,PMMA-CsPbBr3薄膜的透射率明显增加。通过研究制备的PMMA-CsPbBr3/Au异质结型光电探测器的I-V特性,发现随着PMMA的加入,异质结器件的暗电流降低,同时其光电流密度和稳定性增加。     

ZnO薄膜紫外探测器的光电性质

采用直流反应磁控溅射的方法制备ZnO薄膜, 用X射线衍射仪(XRD)、扫描电镜(SEM)和紫外-可见光谱仪(UV-Vis)分别表征ZnO薄膜的晶体结构和表面形貌等特征。并用此材料制备Au/ZnO/Au金属-半导体-金属(MSM)结构光电导型ZnO薄膜紫外光探测器。实验结果表明, ZnO探测器在360 nm出现明显光响应,其光电流为2.5 mA, 在5 V偏置电压下暗电流为250 μA; ZnO紫外探测器在250～380 nm的紫外波段, 探测器有很明显的光响应, 且光电流响应比较平坦; 在380～430 nm区域, 光响应明显下降; 其光响应的上升与下降弛豫时间分别为20 s与80 s。从光谱响应图中可以看出紫外(360 nm)比可见区(450 nm)的光响应高出3个数量级, 薄膜表面存在的缺陷(如氧空位)在ZnO紫外探测器的光电效应中有重要作用。     

Au掺杂碲镉汞长波探测器技术研究

昆明物理研究所多年来持续开展了对Au掺杂碲镉汞材料、器件结构设计、可重复的工艺开发等研究,突破了Au掺杂碲镉汞材料电学可控掺杂、器件暗电流控制等关键技术,将n-on-p型碲镉汞长波器件品质因子(R₀A)从31.3Ω·cm²提升到了363Ω·cm²(λcutoff=10.5μm@80 K),器件暗电流较本征汞空位n-on-p型器件降低了一个数量级以上。研制的非本征Au掺杂长波探测器经历了超过7年的时间贮存,性能无明显变化,显示了良好的长期稳定性。基于Au掺杂碲镉汞探测器技术,昆明物理研究所实现了256×256 (30μm pitch)、640×512 (25μm pitch)、640×512 (15μm pitch)、1 024×768 (10μm pitch)等规格的长波探测器研制和批量能力,实现了非本征Au掺杂长波碲镉汞器件系列化发展。     

蝶形天线增强的HEMT室温太赫兹探测器

介绍了一种基于GaN/AlGaN高电子迁移率晶体管(HEMT)的高速、高灵敏度室温太赫兹探测器。在太赫兹波辐射下,HEMT源漏端产生直流光电流,并能被栅压灵敏地调控。探测器中新颖的蝶形天线设计使接收到的太赫兹电场得到显著增强,提高了探测器的响应度。通过测量探测器对不同偏振方向的太赫兹光的响应,有效验证了蝶形天线对太赫兹电场的增强作用。室温下,探测器的等效噪声功率约为5×10-10W/Hz21,平均响应度达42mA/W。实验结果表明,光电流的产生与二维电子气沟道的场效应特性和入射太赫兹波电场在电子沟道中的分布密切相关。自混频理论能很好地描述实验结果。     

新型长波长InP基谐振腔增强型光探测器

介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。     

高性能硅光电探测器设计及温度特性研究

采用适当的器件工艺和特制2 mm厚无附加镀层光学玻璃滤光片,使所研制的绿光Si光电探测器的最大量子效率η达到91%,光响应信噪比(SNR)大于1×104.对该Si光电探测器在零偏下的光电流温度特性进行了测量,并对结果做了较深入的理论分析.     

SOI基垂直入射Ge PIN光电探测器的研制

研制了在SOI衬底上工作于近红外波段的垂直入射GePIN光电探测器。采用低温Ge缓冲层技术,在超高真空化学气相淀积系统(UHV/CVD)上生长探测器材料。测试表明,器件的暗电流主要来源于表面漏电流,暗电流密度随着尺寸的增加而减小,在2V偏压时暗电流密度可达17.2mA/cm2;器件在波长1.31μm处的响应度高达0.22A/W,对应量子效率为20.8%。无偏压时,器件的响应光谱在1.2～1.6μm波长范围内观察到4个共振增强峰,分别位于1.25、1.35、1.45和1.55μm左右,峰值半高宽约为50nm,共振增强效应是由SOI衬底的高反射率引起的。采用传输矩阵法模拟的响应光谱与实验测量结果吻合良好。     

Preparation of Highly Stable Black Phosphorus by Gold Decoration for High‐Performance Thermoelectric Generators

For thermoelectric (TE) applications, the surface of exfoliated black phosphorus (BP) can be successfully functionalized with Au nanoparticles (NPs), leading to significantly enhanced TE performance for a controlled Au NP content. A facile and selective decoration of metal species on the defect sites of BP is achieved by the spontaneous formation of Au NPs on the surface of BP through a redox reaction of Au precursors. Such a heterostructure provided by the Au decoration of BP enhances electrical conductivity (from 0.001 to 63.3 S cm^?1) through tuning of the charge carrier concentration and retains the initial Seebeck coefficient of BP. Consequently, the TE power factor of the Au‐decorated BP increases significantly to 68.5 µV m^?1 K^?2, which is 2740 times that of the pristine BP. More significantly, in contrast to the severe degradation of the pristine BP in the air, surface‐functionalized BP exhibits excellent stability upon exposure to air for a long period, which is beneficial for practical TE applications. Given these interesting and unique properties of Au‐decorated BP, a vertical TE generator with a high power output of 79.3 nW (ΔT = 2 °C) is prepared by using the Au‐decorated BP as a p‐type TE material.     

Environmentally Robust Black Phosphorus Nanosheets in Solution: Application for Self‐Powered Photodetector

Large‐size 2D black phosphorus (BP) nanosheets have been successfully synthesized by a facile liquid exfoliation method. The as‐prepared BP nanosheets are used to fabricate electrodes for a self‐powered photodetector and exhibit preferable photoresponse activity as well as environmental robustness. Photoelectrochemical (PEC) tests demonstrate that the current density of BP nanosheets can reach up to 265 nA cm^?2 under light irradiation, while the dark current densities fluctuate near 1 nA cm^?2 in 0.1 M KOH. UV–vis and Raman spectra are carried out and confirm the inherent optical and physical properties of BP nanosheets. In addition, the cycle stability measurement exhibits no detectable distinction after processing 50 and 100 cycles, while an excellent on/off behavior is still preserved even after one month. Furthermore, the PEC performance of BP nanosheets‐based photodetector is evaluated in various KOH concentrations, which demonstrates that the as‐prepared BP nanosheets may have a great potential application in self‐powered photodetector. It is anticipated that the present work can provide fundamental acknowledgement of the performance of a PEC‐type BP nanosheets‐based photodetector, offering extendable availabilities for 2D BP‐based heterostructures to construct high‐performance PEC devices.     

Antireflective Nanoparticle Arrays Enhance the Efficiency of Silicon Solar Cells

In this study, the phenomenon of light trapping in Si solar cells coated with metal (Au) and dielectric (TiO₂, SiO₂) nanoparticles (NPs) is systematically investigated. In contrast to previous reports, herein it is proposed that the photocurrent enhancement of solar cells should be attributed to the limited antireflection ability of the Au NP arrays. In other words, the Au NP arrays might not enhance the absorption of the active layer in cells when no light is reflected from the air–substrate interface. Therefore, the Au NPs are replaced with dielectric NPs, which possess lower extinction coefficients, and then the antireflection property of the TiO₂ NP arrays is optimized. A simple, rapid, and cheap solution‐based method is used to prepare close‐packed TiO₂ NP films on Si solar cells; these devices exhibit a uniform and remarkable increase (ca. 30%) in their photocurrents. To the best of the authors’ knowledge, this uniform photocurrent enhancement is greater than those obtained from previously reported metal and dielectric NP–enhanced Si wafer‐based solar cells.     

Electrical characteristics of high performance Au/n-GaN schottky diodes

Au/n-GaN Schottky diodes with the Au electrode deposited at low temperature (LT=77K) have been studied. In comparison, the same chip of GaN epitaxial layer was also used for room temperature Schottky diodes. The low temperature Schottky diodes exhibit excellent performance. Leakage current density as low as 2.55×10⁻¹¹ A·cm⁻² at −2.5 V was obtained in the LT Schottky diodes. The linear region in the current-voltage curve at forward bias extends more than eight orders in current magnitude. Current-voltage-temperature measurements were carried out to study the characteristics of the LT Schottky diodes. A typical barrier height of about 1.32 eV for the LT diode, which is the highest value ever reported, was obtained. The obvious enhancement in electrical performance makes the LT processing a very promising technique for GaN device application although the detailed mechanisms for the LT Au/n-GaN Schottky diodes are still under investigation.     

Anisotropic conductive adhesives with enhanced thermal conductivity for flip chip applications

This paper presents the development of new anisotropic conductive adhesives (ACAs) with enhanced thermal conductivity for improved reliability of adhesive flip chip assembly under high current density condition. As the bump size in the flip chip assembly is reduced, the current density through the bump also increases. This increased current density causes new failure mechanisms, such as interface degradation due to intermetallic compound formation and adhesive swelling resulting from high current stressing. This process is found especially in high current density interconnection in which the high junction temperature enhances such failure mechanisms. Therefore, it is necessary for the ACA to become a thermal transfer medium that allows the board to act as a new heat sink for the flip chip package and improve the lifetime of the ACA flip chip joint. We developed the thermally conductive ACA of 0.63 W/m·K thermal conductivity by using a formulation incorporating the 5-μm Ni-filled and 0.2-μm SiC-filled epoxy-based binder system. The current carrying capability and the electrical reliability under the current stressing condition for the thermally conductive ACA flip chip joints were improved in comparison to conventional ACA. This improvement was attributed to the effective heat dissipation from Au stud bumps/ACA/PCB pad structure by the thermally conductive ACA.     

Plasma-Enhanced Atomic Layer Deposition of Amorphous Ga2O3 for Solar-Blind Photodetection

Wide-bandgap gallium oxide (Ga₂O₃) is one of the most promising semiconductor materials for solar-blind (200 nm to 280 nm) photodetection. In its amorphous form, amorphous gallium oxide (a-Ga₂O₃) maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus it is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga₂O₃ film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga₂O₃ thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga₂O₃/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga₂O₃/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga₂O₃ film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.     

1.0μm栅长GaAs基MHEMT器件及SPDT开关MMIC

利用MBE外延材料和接触式光学光刻方式,成功制备出1.0μm栅长GaAs基MHEMT器件,分别蒸发Pt/Ti/Pt/Au和Ti/Pt/Au作为栅电极金属.获得了优越的DC和RF性能,Pt/Ti/Pt/Au和Ti/Pt/Au MHEMT器件的gm为502(503)mS/mm,JDss为382(530)mA/mm,VT为0.1(-0.5)V,fT和fmax分别为13.4(14.8),17.0(17.5)GHz.利用单片集成增强/耗尽型GaAs基MHEMT器件制备出九阶环型振荡器,直流电压为1.2V时,振荡频率达到777.6MHz,门延迟时间为71.4ps.利用Ti/Pt/Au MHEMT器件设计并制备出了DC-100Hz单刀双掷(SPDT)关MMIC,其插入损耗、隔离度、输入输出回波损耗分别优于2.93,23.34和20dB.     

Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode

The spectral response of n-GaN Schottky photodiode is calculated for various metals including gold (Au), palladium (Pd), nickel (Ni) and platinum (Pt). The choice of the used metal is discussed. Responsivity increases with increase in the metal workfunction. A high light transmittance of the illuminated metal is recommended for not damaging the photoresponse. In order to achieve high performance, we also investigate the variation of spectral response and UV/visible contrast with parameters of the photodiode (doping density, layer thickness, etc.). A moderate doping level (10¹⁸ cm⁻³) and thin layer (0.5 μm) are needed to ameliore the responsivity and the rejection ratio. The application of reverse bias is effective to raise the photoresponse. The adequate choice of these parameters leads to a photodetector with the desired performance.     

Influence of surface contamination on metal/metal bond contact quality

The influence of surface cleanliness of Au/Ni coated multichip materials (MCMs), Ag plated Cu lead frames, and Al bond pads on semiconductor chips on the strength of Au wire bond contacts has been investigated. A clean surface is important for good adhesion in any kind of attachment process. Investigations by means of x-ray photoelectron spectroscopy have been performed on the bond substrates to determine the chemical composition, the nature as well as the thickness of the contamination layer. The influence of contamination on bond contact quality has been examined by pull force measurements, which is an established test method in semiconductor packaging industry for evaluating the quality of wire bonds. The results clearly show that a strong correlation between the degree of contamination of the substrate and pull strength values exists. Furthermore, a contamination thickness limiting value of 4 nm for Au and Ag substrates was determined, indicating good wire bond contact quality. The effect of plasma cleaning on wire bondability of metallic and organic (MCMs) substrates has been examined by pull force measurements. These results confirm the correlation between surface contamination and the strength of wire bond contacts for Au/Ni coated MCMs and Ag plated Cu lead frames. Atomic force microscopy measurements have been performed to determine the roughness of bond surfaces, demonstrating the importance of nanoscale characterization with regard to the bonding behavior of the substrates. Finally, bonding substrates used in integrated circuit packaging are discussed with regard to their Au wire bonding behavior. The Au wire bonding process first results in a cleaning effect of the substrate to be joined and secondly enables the change of bonding energy into frictional heat giving rise to an enhanced interdiffusion at the interface.     

Transparent conductor-embedding high-sensitive germanium NIR photodetector

An extreme NIR photodetector was achieved by using transparent conducting layers on a small energy bandgap germanium (Ge) semiconductor. The optically-transparent and electrically-conducting layers (AZO and ITO) were sequentially coated on a Ge substrate by a large-scale available sputtering method, which spontaneously forms a Schottky junction (ITO/AZO/Ge) without an intentional doping process. The interface effect between AZO and Ge materials was studied at different depth levels from the surface using XPS and UPS measurements. The energy bands of AZO were bent at the interface to make a rectifying junction with Ge. The band bending at the interface is one of the important characteristics of Schottky photodiodes. The dark I-V profile of the AZO/Ge device showed rectification ratio of 22.36 along with the lowest reverse saturation current of 53.6  μA. The leakage current was perfectly suppressed due to the passivation effect of GeO_x interfacial layer. At low frequency region, the Mott-Schottky analysis measured the barrier height as 0.38 eV which was correlated well with the value derived from the simulated band offset using SCAPS. This functionally designed transparent-embedding photodetector showed the excellent photoresponses for NIR regions. We propose a promising approach for highly-sensitive NIR photodetector by using a small energy bandgap Ge semiconductor with the transparent conducting layer.