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1.
陆一闻  郭巍  崔林丽  杨阳 《红外》2022,43(4):41-48
长三角一体化示范区内河网水系的水环境容量有限且地势低洼,所以在暴雨季节易发生洪涝灾害。卫星遥感技术因其宏观、动态的特点而成为洪涝灾害监测的重要手段之一。基于哨兵1号(Sentinel-1) C波段合成孔径雷达(Synthetic Aperture Radar, SAR)影像对淀山湖附近水域的水体识别方法进行了试验,初步实现了2020年梅雨期间多时相水体面积提取,并结合FROM-GLC全球下垫面资料对积水状况进行了分析。根据研究结果可得出以下结论:(1)欧空局官方SNAP软件对SAR影像的斑点噪声具有较好的抑制作用;(2)由于淀山湖水体的后向散射系数在图像上表现为单峰形态,可用阈值分割方法提取水体信息;(3)梅雨期间的水域水情较4月份增长约40 km2;(4)受强降水影响,耕地被淹没区的面积最大,不透水地表和裸地受影响较小。  相似文献   

2.
以无水乙醇作反应溶液,采用室温共沉淀,合成 了CaHPO4:Tb3+绿色荧光粉。用X射线衍射(XRD)、 扫描电镜(SEM)、荧光(PL)光谱、热重(TG)和差示扫描量热(DSC)等分别对所得样品的相结构、形貌、发光 性能以及热稳定性进行研究。研究结果表明,在室温条件下,得到了纯三斜相CaHPO4:Tb 3+;当烧结温度为 400℃时,开始出现相结构转变;温度升高到500℃以上时,晶相完全转变为纯四方晶系Ca2P2O7,但样 品的形貌变化很小,都为分散性比较好、尺寸分布比较均匀的纳米颗粒。同时,利用激发光 谱和发射光谱 研究了Tb3+在CaHPO4和Ca2P2O7基质中的发光性能,在波长为370nm紫外光的激发下,都观察到Tb3+的特 征跃迁(5D47FJ,J=3~6),其中以5D47F5 跃迁发射(544nm)为主,而且CaHPO4:Tb3+的发光强度要明 显强于Ca2P2O7:Tb3+。  相似文献   

3.
薄膜的光学常数(折射率和消光系数)精度直接影响设计和制造的光学器件的性能。大多数光学常数的测定方法较为复杂,不能直接应用在镀膜过程中。提出了一种薄膜光学常数原位实时测量的方法,通过监测沉积材料的透射率可以快速准确地测量光学常数。测量了高吸收材料Si、低吸收材料Ta2O5和超低吸收材料SiO2的近红外光学常数,用这种方法测得光学常数分别为n=3.22,k=4.6×10-3,n=2.06,k=1.3×10-3n=1.46,k=6.6×10-5。该方法适用于强吸收材料和弱吸收材料光学常数的测定,为在线精确测量薄膜的光学常数提供了一种有效的方法,对设计和制造高质量的光学器件具有重要意义。  相似文献   

4.
为替代矢量网络分析仪,形成一套专用于闭式谐振腔的测量系统,本文采用频谱分析仪模块和跟踪发生器模块,基于C++和VISA库函数进行系统控制,使两模块可以同步收发射频信号,实现闭式谐振腔谐振频率和Q值的测量功能,最终实现微波介质材料的介电常数的测量,形成一套一体化闭式谐振腔介电常数测量系统。该系统与矢量网络分析仪对比测量微波介质陶瓷材料K65,介电常数的相对误差为5.5×10-3,tanδ的相对误差为-3.74×10-2;对比测量材料K35,介电常数的相对误差为-1.69×10-3,tanδ的相对误差为1.08×10-1。测量结果相对误差较小,介电常数的相对误差小于0.01,tanδ的相对误差小于0.5,说明一体化介电常数测量系统的测量结果准确,可用于闭式谐振腔方法下的介电常数测量,也可推广用于其他介电常数测量系统。  相似文献   

5.
Ca3Y2(Si3O9)2:Tb3+绿色荧光粉的光谱特性   总被引:1,自引:1,他引:0  
采用高温固相法制备了Ca3Y2(Si3O9)2: Tb3+绿色荧光粉,研究了材料的光学性能。X 射线衍射(XRD)结果显示,掺杂少量的Tb3+,并未影响Ca3Y2(Si3O9)2材料 的晶相结构。Ca3Y2(Si3O9)2:Tb3+ 荧光粉的激发光谱由较强的4f75d1宽带吸收(200~300 nm )和较弱的4f-4f电子跃迁吸收 (300~500 nm)构成,主激发峰位于236nm。取波长分别为236、376和482nm的光 作为激发源时,发现样品的主发射峰均位于544 nm,对应Tb3+5D 4→7F5跃迁发射。以236nm 紫外光作为激发源,监测544nm主发射峰,随Tb3+浓度 的增大,Ca3Y2(Si 3O9)2:Tb3+的荧光寿命逐渐减小,但在实验范围内并未出现浓度猝灭现象。  相似文献   

6.
对Sb2Te3薄膜的结构、线性光学及非线性吸收性质的Ti掺杂影响进行了系统性探究。利用磁控溅射和高温退火手段制备了不同Ti掺杂浓度的晶态Sb2Te3薄膜。X射线光电子能谱分析显示Sb2Te3薄膜中的Ti元素以Ti4+化学态以TiTe2的形式存在。线性光学性质结果表明,在保持非线性器件中宽工作波长特性的同时,Ti掺杂可以提高Sb2Te3薄膜的透射率,并降低光学带隙从1.32 eV至1.25 eV,根据Burstein-Moss理论,这取决于载流子的减少。利用自主搭建的开孔Z扫描系统,测试了薄膜样品在132 GW/cm2强度下800 nm飞秒激光激发的非线性吸收性质,结果显示的Ti掺杂引起的饱和吸收可调谐行为可归因于光学带隙减小与晶化抑制的竞争效应。此外,Ti掺杂将Sb2Te3薄膜的激光损伤阈值从188.6 GW/cm2提高到了265.5 GW/cm2。总而言之,Ti掺杂Sb2Te3薄膜在非线性光学器件领域具有广泛的应用前景。  相似文献   

7.
通过高温熔融法制备了10组Tb3+掺杂高 Lu-Gd氟氧化物玻璃样品,测试了样品的密度、透射光谱、激发光 谱、紫外激发发射光谱、X射线激发发射光谱和Tb3+、Gd3+的荧光寿命。着重 研究了Gd2O3和Lu2O3对Tb3+发光的影响,Tb3+的浓度猝灭效应以及Gd3+与Tb3+的能量 传递。结果表明,样品的密度 很高,部分样品密度已经超过6g/cm3;Tb3+的浓度猝灭效 应使得350~450nm范围内的荧光强度下降, 但是使得480~650nm范围内的发光强度增强;Lu2O3对Tb3+ 的紫外激发荧光强度几乎没有影响,但是 对X射线激发的发光强度有较大的影响;Gd2O3对Tb3+的发光具有促进作用, 两者 之间存在着能量传递,并通过Dexter理论验证了Gd3+与Tb3+间的能量传递是无 辐射能量传递。  相似文献   

8.
为了解决光学材料多功能耦合与集成的光谱诉求及其材料设计冲突难题,本文提出一种基于[TiAlN/Ag]2/TiAlN序构复合薄膜开展可见光透射诱导与红外辐射抑制的协同设计方法,诠释序构薄膜材料多功能耦合的新原理与新机制,并对其光学兼容性能测试表征。研究表明,构筑的[TiAlN(厚度30 nm)/Ag(厚度15 nm)]2/TiAlN(厚度30 nm)序构复合薄膜具备带通状选择性透射与中远红外低辐射的光学特性,可较好实现透视、遮阳、低辐射控温与红外隐身多功能兼容效果,在军用车辆、绿色建筑等特种玻璃的辐射控温与红外隐身领域有应用潜力。  相似文献   

9.
This paper presents transport measurements on both vacancy doped and gold doped Hg0.7Cd0.3Te p-type epilayers grown by liquid phase epitaxy (LPE), with NA=2×1016 cm−3, in which a thin 2 μm surface layer has been converted to n-type by a short reactive ion etching (RIE) process. Hall and resistivity measurements were performed on the n-on-p structures in van der Pauw configuration for the temperature range from 30 K to 400 K and magnetic field range up to 12 T. The experimental Hall coefficient and resistivity data has been analyzed using the quantitative mobility spectrum analysis procedure to extract the transport properties of each individual carrier contributing to the total conduction process. In both samples three distinct carrier species have been identified. For 77 K, the individual carrier species exhibited the following properties for the vacancy and Au-doped samples, respectively, holes associated with the unconverted p-type epilayer with p ≈ 2 × 1016 cm−3, μ ≈ 350 cm2V−1s−1, and p ≈ 6 × 1015 cm−3, μ ≈ 400 cm2V−1s−1; bulk electrons associated with the RIE converted region with n ≈ 3 × 1015cm−3, μ ≈ 4 × 104 cm2V−1s−1, and n ≈ 1.5 × 1015 cm−3, μ ≈ 6 × 104 cm2V−1s−1; and surface electrons (2D concentration) n ≈ 9 × 1012 cm−2 and n ≈ 1 × 1013 cm−2, with mobility in the range 1.5 × 103 cm2V−1s−1 to 1.5 × 104 cm2V−1s−1 in both samples. The high mobility of bulk electrons in the RIE converted n-layer indicates that a diffusion process rather than damage induced conversion is responsible for the p-to-n conversion deep in the bulk. On the other hand, these results indicate that the surface electron mobility is affected by RIE induced damage in a very thin layer at the HgCdTe surface.  相似文献   

10.
乌达矿区的煤火自燃造成了严重的环境、经济和安全灾害, 对该地区的土地覆被变化研究有助于评估煤火灾害的影响程度和范围, 而Landsat8 卫星影像为煤火区的土地覆被分类探测与研究提供了可能。依据乌达地区的地形、地貌和地表辐射特征划分5个子区域, 基于通用单决策树模型, 利用光谱特征分析、高程、坡度和热红外信息对每个子区域分别构建5种不同参数的决策树模型。相比通用单决策树模型以及其他4种普通分类方法, 因减少了土地覆被的混淆度, 多子区决策树模型土地覆被分类的整体精度和Kappa系数更高, 分别达到87.63%和0.86, 尤其是建筑物和煤灰的分类精度有较为明显的提升。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

13.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

14.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

15.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

16.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

17.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

18.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

19.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

20.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

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