一种单边带QPSK调制解调方法

提出了一种单边带QPSK调制解调的方法.该方法在调制端通过适当的滤波器滤去QPSK调制信号的一个边带,在解调端通过希尔伯特变换构造出频谱上的共轭对称量实现解调,并通过使用对原始信号进行密勒码编码的方法减弱了希尔伯特变换在低频处的不理想对系统性能的影响.给出了详细的理论推导,并通过计算机仿真实验结果证明,提出的单边带QPSK调制解调方法在AWGN信道上的误码性能比传统的双边带QPSK调制解调方法差3dB,但能够节省一半传输带宽.因此,它是一种很有实际应用价值的调制解调算法,尤其适用于带宽受限的数据传输系统.     

QPSK中频全数字解调器的研究与FPGA实现

基于QPSK调制方式的高效率、低误码率、频谱性能好等特点,本文采用可编程逻辑器件CycloneⅡEP2C70F896C6N成功地实现了QPSK全数字解调的电路的设计。分别在MATLAB软件和Quartus Ⅱ9.0软件中进行了解调器中的核心模块的设计和仿真,同时在各个模块仿真成功的情况下,对整体电路进行了仿真。输入端的信号都为20MHz的中频已调信号,最后准确解调出基带信号。通过比较Quartus II仿真结果和MATLAB仿真结果,解调出来的结果是一致的,这也说明了所设计的解调模块是正确的。在信噪比为10dB时,误码率达到10-3,显然电路的设计能够达到要求的性能指标。     

Costas环法BPSK信号解调的研究与实现

载波同步与解调是通信系统中的关键技术之一。二相相移键控(BPSK)、四相相移键控(QPSK)调制是最基础、最常见的2种相移键控调制方式,应用比较广泛,因此其信号的正确、快速解调的研究变得非常重要。这里主要研究了科斯塔斯(Costas)环法BPSK信号的解调方法,QPSK信号可以看成2路BPSK信号,不难以文中所述为基础实现QPSK信号的解调。在Simulink平台对BPSK信号的解调进行了仿真,介绍了BPSK信号的产生、载波同步解调过程的仿真模型,给出了比较详细的实现过程,对仿真结果进行分析。仿真结果表明,文中搭建的仿真模型能够实现BPSK信号的解调。     

载波相位误差对解调性能的影响分析

对MPSK、QAM信号载波相位误差对于解调性能的影响进行了定量分析,推导给出了载波估计方差较小时BPSK、QPSK信号载波相位误差对解调性能影响的表达式。根据定量分析结果,载波估计方差较小时对BPSK、QPSK信号载波估计方差与误码率的关系进行了仿真,仿真结果和理论分析结果是一致的。结果表明在Es/N0为2、载波估计方差小于1×10-2的情况下,载波相位误差对于解调性能的影响小于0.2 dB。     

基于基片集成波导技术的QPSK微波调制器

QPSK是一种频带利用率和抗噪声能力很强的调制方式,广泛应用于军事和卫星通信领域.本文采用基片集成波导（Substrate integrated waveguide,SIW）技术设计仿真了一个X频段QPSK微波调制器,电路的相位误差在工作频段内小于3°,而且幅度不平衡小于0.5 dB,可实现对8.5～10.2 GHz载波信号的直接QPSK调制.     

X波段低变频损耗混频器设计

采用商用肖特基势垒二极管HSMS-2822,研制了低变频损耗、高隔离度X波段单平衡混频器。为实现所需要的混频带宽,本振信号和射频信号采用三分支定向耦合器耦合输入,仿真研究表明其能有效地改善工作频率带宽,提高本振端口与射频端口间的隔离度。通过设计合理的空闲频率回收电路,回收利用空闲频率能量,能有效地降低混频器变频损耗,提高本振信号、射频信号及空闲频率信号到中频端口的隔离度。在10.6GHz,测得最小变频损耗5.67dB;在10～11.5GHz,混频器变频损耗为6.4±0.7dB,变频损耗平坦度好,RF-IF隔离度优于27dB,LO-IF隔离度高于24dB,LO-RF隔离度优于14dB。     

一种改进的高动态QPSK信号解调算法

正交相移键控(QPSK)调制解调方式广泛应用于深空通信、数字卫星通信等高速系统中,高动态QPSK信号具有较大的多普勒载波频偏,针对现有的解调算法对QPSK信号频偏估计范围小、精度较低等问题,提出了一种改进的高动态QPSK信号解调算法。该算法利用基于Zoom-FFT的Quinn频率估计算法对载波频偏进行估计,将频偏估计分为粗估计和精估计两个过程,对估计所得频偏进行补偿后利用Costas环完成载波同步。在MATLAB中对算法进行了仿真,仿真结果表明,该算法能够实现对高动态大频偏QPSK信号的有效捕获,与传统的解调方式相比,该算法对载波频偏的估计范围更大,且具有更高的频偏估计精度和更好的误码性能。     

一种四进制连续相位调制新方法

为简化连续相位调制信号的相干解调,提出了一种四进制连续相位调制方法。在发送端,信号调制器根据发送的前后两组比特信息从一个预先设计的基带信号集合中选择对应的基带信号作为调制信号。该调制方法使信息码元由基带信号某一时刻的绝对相位值表示,当完成相位和载波同步后,在接收端其接收处理和传统QPSK信号一致,可以直接使用IQ路的采样值解调信息比特。仿真表明,调制信号的相干解调误比特性能与QPSK信号的相干解调相同。由于调制信号具有准恒包络和连续相位的特点,更适合应用于使用非线性功放的功率受限通信系统中。     

QPSK信号盲识别及盲解调技术

提出了一种低信噪比下正交相移键控(QPSK)信号盲识别和盲解调的方案,能够用于0dB情况下的QPSK信号盲识别和盲解调。仿真表明该方案具有实用性和可行性。     

一种低信噪比解调的实现方案及性能仿真

高效率编码技术(如LDPC,Turbo码)的发展迫切要求降低解调门限。提出一种适用于QPSK调制方式的低信噪比解调方案,该方案采用频域非线性定时估计算法进行定时误差估计,利用FFT进行载波频差估计,利用周期性插入的导频序列进行载波相位估计。首先仿真了定时误差和载波相位误差对解调性能的影响,并在此基础上确定了算法的具体参数,最后对解调器的综合性能进行了仿真,仿真结果表明上述算法在Es/N0=2dB时的解调性能恶化小于0.5 dB。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.