通用光电二极管SPICE模型与特性分析

提出一种普适光电二极管 SPICE模型用于 ANACAD ELDO电路模拟 ,并能分析其光源的光谱特性 ,比较 ELDO模拟和器件数值模拟结果说明 ,该模型可成功用于光学微系统的电路模拟     

在Multisim中创建任意函数信号源

SPICE是通用的电路模拟程序，它最早是由美国的伯克力大学于1975年开发的，是EDA技术的基础。目前多数电路模拟应用软件都是以SPICE为基础的，Multisim就是以SPICE为内核的电路模拟软件。但是在SPICE中不能直接以时间为变量为信号建模，因此限制了它的应用。本文介绍在SPICE中抽取时间量的方法，利用SPICE中的非线性受控源和时间变量可以组成各种波形的信号源，使用目前流行的交互式电路模拟软件Multisim，所创建的时间元件和信号源元件存储在Muhisim的用户元件库中供调用。最后给出了一个使用所创建的信号源进行电路模拟的实例。     

SPICE程序中多次跳变信号的模拟

模拟电路通过SPICE程序可以进行直流、交流和瞬变状态的分析。当进行瞬态分析时,必须模拟各种信号的输入。在SPICE程序中只设定了五个时变独立信号模型(正弦信号、指数信号、脉冲信号、单一频率调频信号和分段线性信号),因此,只能在这五个信号模型基础上对各种信号源进行模拟。这五种     

低温ECL电路的直流特性分析

本文在对低温双极晶体管的直流特性的分析基础上,推导出ECL电路在低温下的直流解析模型,并与实验结果和计算机模拟结果进行了比较,还对SPICEⅡ模型在低温下的修正和低温ECL电路的设计进行了一些探讨。     

pH-ISFET器件及其电路的SPICE模拟方法

本文提出用SPICE软件模拟pH-ISFET器件及其电路的方法。通过SPICE内部的MOSFET参数和引入一些信号源来实现对pH-ISFET传感器及其电路的pH灵敏度关系、瞬态响应以及温度特性的模拟,所得结果与实验观测结果基本相符。     

一种分析模拟电路中互连线的新方法

互连线在高性能模拟集成电路中的影响已变得越来越不可忽视,部分元等效电路法（Partial Element Circuit,PEEC）是一种分析互连线的有效模型,常用方法是再用SPICE等数值模拟软件对PEEC模型进行分析。文中提出的用符号分析法模拟PEEC模型以及其它电路元器件,具有大大降低运算量等优点。基于这一点开发出一套交互式程序,使得包括考虑互连线影响的模拟电路的设计、验证和优化变得更容易、更有效率。     

2019 IEEE EMC & SIPI 国际会议——提名文章(四)

提出了地平面上的屏蔽电缆在入射均匀平面波激励下的SPICE模型.该模型适用于辐射和传导EMC分析.它允许内部和外部系统之间的双向耦合,因此可以集成到抗扰度和发射分析的仿真中.该模型是在经典传输线理论的基础上建立的,由传输线、受控源和RLC电路组成,可以与非线性元件相结合.论文将计算结果与数值模拟结果进行了比较,两者吻合较好.     

RTD基高速多值量化器的设计

建立的RTD SPICE模型,与实际制作的GaAs基RTD器件进行了拟合验证.对四值量化器电路的工作原理进行了解释说明,通过器件参数的提取,对电路进行了模拟仿真,确定了电路相关参数.通过公式计算得出的电路阈值电压与模拟结果一致.最后对电路最大的工作频率进行了分析.     

VDMOS等效电路的SPICE模型

分析了VDMOS器件中存在的各种寄生效应以及这些寄生效应对器件性能的影响,在此基础上建立了VDMOS等效电路的SPICE模型.通过MEDICI数值分析软件,模拟VDMOS在不同偏置条件下的电压、电流、电容特性,从而提取出VDMOS等效电路模型参数.并用SPICE软件对等效电路仿真,进行了直流分析和瞬态分析,得到等效电路的电学特性曲线图.仿真的结果与MEDICI器件模拟工具模拟结果相互比较,具有较好的一致性.     

固支梁微传感器等效电路宏模型及IP库的建立

针对 MEMS器件中的固支梁结构 ,采用了 SPICE中标准多项式受控源的形式和模态分析的方法 ,运用 F-I类比的电路形式建立了固支梁微传感器的多模态小信号等效电路宏模型 ,并建立了相应的 IP模型库单元。在外加力作用下 ,用 SPICE软件调用固支梁的 IP库并结合外加电路进行了系统级的模拟 ,得到微传感器分布参数的电学参量输出特性曲线 ;最后采用 COVENTORWARE软件进行了模型的各个模态的谐振频率和相关曲线的验证     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.