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《电子工业专用设备》编辑部 《电子工业专用设备》2009,38(10):1-8
离子注入制程已成为器件设计的最前端工作.现在更被视为实现32nm和22nm晶体管制程的推动要素。器件漏电流、浅结面制作,器件尺寸缩小,以及急速增加成本的挑战,正在限制摩尔定律的延伸。针对32nm节点离子注入制程器件的工艺要求.介绍了离子注入设备的发展方向。 相似文献
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为了提高980nm半导体激光器的可靠性,采用氦离子注入形成腔面电流非注入区技术制作了4μm条宽的脊形波导激光器,并利用同一块外延片制作了常规工艺的4μm脊形波导激光器作为对比。经过长期老化实验得知:常规工艺器件在1500h前全部失效,而采取新技术的器件寿命超过了3000h。通过对器件的扫描电镜分析发现,腔面灾变性损伤、铟焊料的质量和腔面污染等因素对器件失效有直接影响。 相似文献
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为制作应变硅MOS器件,给出了一种制备具有高表面质量和超薄SiGe虚拟衬底应变Si材料的方法。通过在Si缓冲层与赝晶Si0.8Ge0.2之间设置低温硅(LT-Si)层,由于失配位错限制在LT-Si层中且抑制线位错穿透到Si0.8Ge0.2层,使表面粗糙度均方根值(RMS)为1.02nm,缺陷密度系106cm-2。又经过P+注入和快速热退火,使Si0.8Ge0.2层的应变弛豫度从85.09%增加到96.41%,且弛豫更加均匀。同时,RMS(1.1nm)改变较小,缺陷密度基本没变。由实验结果可见,采用LT-Si层与离子注入相结合的方法,可以制备出满足高性能器件要求的具有高弛豫度、超薄SiGe虚拟衬底的高质量应变Si材料。 相似文献
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M. A. McKee T. McGivney D. Walker K. Capuder P. E. Norris R. A. Stall B. C. Rose 《Journal of Electronic Materials》1992,21(3):289-292
This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (λ ∼ 650 nm)
by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single
50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed
on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence
(PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was ±2 nm with a 2 mm
edge exclusion. The standard deviation of the peak wavelength,σ
w
, is 0.7 nm. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs.
Each individual wafer has aσ
w
of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within
±0.1 nm. 相似文献
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介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作。实验获得良好结果,均匀性约5%,20分钟腐蚀深度为20μm。 相似文献
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Monolithic, two-stage amplifiers using 0.5*80 mu m/sup 2/ gate GaAs/AlGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0.5 mu m gate length. MMIC two-stage amplifiers achieved average gains of 12.6+or-1.4 dB at 30 GHz and 8.8+or-2.0 dB at 40 GHz, respectively, for all 39 sites across a three inch diameter wafer. These are the first reported results for MMIC two-stage amplifiers using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FETs achieving over 10 dB gain at Ka band.<> 相似文献
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G. J. Bauhuis P. Mulder E. J. Haverkamp J. J. Schermer E. Bongers G. Oomen W. Kstler G. Strobl 《Progress in Photovoltaics: Research and Applications》2010,18(3):155-159
The epitaxial lift‐off (ELO) technique can be used to separate a III–V solar cell structure from its underlying GaAs or Ge substrate. ELO from 4‐inch Ge wafers is shown and 2‐inch GaAs wafer reuse after lift‐off is demonstrated without degradation in performance of the subsequent thin‐film GaAs solar cells that were retrieved from it. Since a basic wet chemical smoothing etch procedure appeared insufficient to remove all the surface contamination, wafer re‐preparation is done by a chemo‐mechanical polishing procedure. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
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采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30~36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。 相似文献
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对GaAs赝配高电子迁移率晶体管(PHEMT)在栅凹槽光刻和栅凹槽腐蚀过程中光刻窗口内经常出现的一些沾污颗粒进行了分析.设计了一系列实验来分析残留在芯片上的颗粒度参数,采用4英寸(1英寸=2.54 cm)圆片模拟实际的栅凹槽清洗工艺过程,利用颗粒度测试仪分别测试了4英寸圆片表面不同粒径的沾污颗粒数在喷淋和兆声清洗两种条件下的变化情况.比较两种清洗结果,兆声清洗方法可以有效去除栅凹槽颗粒沾污.在实际流片过程中,采用兆声清洗方法大幅降低了源漏间沟道漏电数值,同时芯片的直流参数成品率由之前的75%提高到了93%. 相似文献
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The quality of GaAs substrate material for manufacturing ion implanted devices is routinely determined by an ion implantation
test. The test involves measuring an electrical quantity, such as sheet resistance, after implanting Si into the substrate.
This work employs GaAs TCAD simulation to address the range of validity of the implantation test and the pitfalls associated
with it. The results show that the electrical measurements are capable of discerning typical variation in the carbon concentration
in the substrate. But, the surface or interface charge on GaAs, which may result from processing involved in wafer preparation,
is also important. Therefore, while the implantation test in most cases is adequate to control the quality of the substrate,
the test is susceptible to misinterpretation owing to the variations arising from the process involved in wafer preparation
for the test. 相似文献
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提出了一种基于硼酸溶液的GaAs/InP低温晶片键合技术,实现了GaAs/InP基材料间简单、无毒性的高质量、低温(290℃)晶片键合。GaAs/InP键合晶片解理截面的扫描电子显微镜(SEM)图显示,键合界面整齐,没有裂缝和气泡。通过键合过程,InP上的In0.53Ga0.47As/InP多量子阱结构转移到了GaAs基底上。X射线衍射及荧光谱显示,键合后的多量子阱晶体质量未变。二次离子质谱(SIMS)和Raman光谱图显示,GaAs/InP键合晶片的中间层厚度约为17 nm,界面处B元素有较高的浓度,键合晶片的中间层很薄,因此可以得到较好的电学、光学特性。 相似文献
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M. L. Seaford D. H. Tomich K. G. Eyink L. Grazulis K. Mahalingham Z. Yang W. I. Wang 《Journal of Electronic Materials》2000,29(7):906-908
Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SOI was thinned to ~1000 Å. The five inch diameter SOI wafer was created by wafer bonding. The GaAs (004) x-ray diffraction (XRD) reflection showed a 25% reduction in the full width half maximum (FWHM) for GaAs on a compliant (511) SOI as compared to GaAs on a silicon substrate. Cross section transmission electron microscopy (XTEM) clearly indicates a different dislocation structure for the two substrates. The threading dislocation density is reduced by at least an order of magnitude in the compliant (511) SOI as compared to the (511) silicon. XTEM found dislocations and damage was generated in the top silicon layer of the compliant SOI substrate after GaAs growth. 相似文献