半导体可饱和吸收镜被动锁模Nd∶YAG激光器的研究

利用自行研制的半导体可饱和吸收镜 (SESAM ) ,在 5W光纤耦合半导体激光器端面抽运的Nd∶YAG激光中 ,实现了半导体可饱和吸收镜被动锁模 ,获得了稳定的皮秒锁模激光输出。经自相关仪测量 ,其锁模激光脉冲宽度小于 10 ps。实验采用直腔结构的谐振腔 ,该腔结构简单 ,易于调整 ,实现可饱和半导体吸收镜稳定锁模时 ,光 光转换效率达到 19%。     

半导体可饱和吸收镜被动锁模Nd:YAG激光器的研究

利用自行研制的半导体可饱和吸收镜(SESAM)，在5W光纤耦合半导体激光器端面抽运的Nd：YAG激光中，实现了半导体可饱和吸收镜被动锁模，获得了稳定的皮秒锁模激光输出。经自相关仪测量，其锁模激光脉冲宽度小于10ps。实验采用直腔结构的谐振腔，该腔结构简单，易于调整，实现可饱和半导体吸收镜稳定锁模时，光～光转换效率达到19％。     

基于热致双焦点选模的径向、切向偏振激光器

侧抽运Nd∶YAG棒对径向偏振光和切向偏振光具有不同的热焦距,利用He-Ne激光器输出的线偏振光和旋转狭缝测量Nd∶YAG棒的径向、切向热焦距,设计谐振腔使得只有一种偏振光能低损耗稳定振荡。在440 W抽运功率下,获得31.7 W径向偏振激光,光束质量因子M2约为2.5,调整腔长后,在470 W抽运功率下,获得30.2 W切向偏振激光,光束质量因子M2约为2.8。实验结果表明,利用热致双焦点选模可以获得较大功率的径向、切向偏振激光输出,但激光器对抽运功率敏感。     

用半导体可饱和吸收镜实现侧面抽运Nd:YAG被动锁模固体激光器

利用半导体可饱和吸收镜(SESAM)锁模技术实现的超快脉冲激光器具有结构简单紧凑、脉冲序列稳定等优点,在许多领域有着重要用途。简述了用半导体可饱和吸收镜锁模固体激光器的具体要求及方案,介绍了采用Z型折叠腔结构和大功率侧面抽运模块实现的半导体可饱和吸收镜被动锁模Nd:YAG固体激光器。得到了平均功率为4.7 W,脉冲重复频率55 MHz,单脉冲能量85 nJ的皮秒激光脉冲,光束质量好,M2因子约为1.2,谱线宽度约为0.1 nm,在小时间尺度上得到较好的锁模效果,对实验现象进行了描述,对实现高功率侧面抽运锁模激光器进行了初步探讨。     

实现径向偏振激光器新高度——记世界首台被动调Q径向偏振激光器

径向偏振激光器的研发历程 径向偏振激光器的研发历史,可以追溯到1972年日本科学家Y.Mushiake等研制的第一台径向偏振He-Ne激光器,与此同时瑞士科学家PohI在闪光灯抽运的红宝石激光器中实现了径向偏振输出,1974年美国科学家J.J.Wynne研制出径向偏振染料激光器,1981年美国科学家Marhic和Garmire研制出径向偏振CO2激光器.进入20世纪90年代后期,对LD侧面抽运的棒状Nd:YAG径向偏振激光器以及工业用高功率CO2径向偏振激光器的研究进入高潮.2006年李建郎研究组研制出国际上首台径向偏振掺镱光纤激光器;在2008年上半年李建郎等又首次从LD端面抽运的Nd:YAG微片激光器获得径向偏振光的连续输出,同年1 1月再次领先实现了LD端面抽运的Nd:YAG微片激光器的被动调Q输出.     

端面抽运全固态皮秒被动锁模激光器

利用国产半导体可饱和吸收镜(SESAM),设计了不同的腔型结构,实现了平均功率5W单路输出,5W双路输出,输出透过率可调节的半导体可饱和吸收镜线型腔连续锁模(CWML)激光器,双向输出六镜环行腔连续锁模激光器等。将半导体可饱和吸收镜放在腔内的特殊位置,利用一种新的技术方法实现了锁模激光器的频率翻倍。利用由非线性晶体KTP和双色镜构成的非线性镜(NLM),实现了端面抽运Nd∶YVO4激光器的4W锁模输出。     

SESAM实现脉冲式Nd:YAG激光器的被动锁模特性研究

利用半导体可饱和吸收镜(SESAM) ,实现了脉冲式Nd:YAG激光器1.06 μm激光的被动锁模,获得了稳定的皮秒激光脉冲序列输出。经自相关实验装置测量,其锁模激光脉冲宽度大约为48.2 ps,脉冲序列的能量为24 mJ,实验采用直腔结构的谐振腔,该腔结构简单,易于调整。理论上分析了1.06 μm SESAM结构及被动锁模基本原理,计算并模拟了半导体可饱和吸收镜中 DBR不同周期时对应反射谱图以及不同周期时中心频率处DBR的反射率曲线,同时模拟出了DBR中电场强度的分布图。     

全光纤掺镱激光器实现锁模和多波长输出

利用半导体可饱和吸收镜(SESAM)和光纤环形镜(FLM)分别作为腔镜,实现了线形腔结构的全光纤掺镱激光器.通过调节偏振控制器(PC)和抽运功率得到了调Q、调Q锁模、连续锁模、二次谐波、三次谐波、多波长等多种输出状态.其中连续锁模状态可实现开机自启动,脉冲宽度31 ps,单脉冲能量40 pJ,重复频率19.3 MHz,...     

角锥棱镜腔Nd3+:YAG激光器被动锁模的理论分析和实验研究

报道了角锥棱镜腔Nd3 :YAG激光器的被动锁模理论分析和实验研究.理论分析并数值模拟了角锥棱镜旋转导致的腔内偏振态和光强的变化.利用偏振镜得到了线偏振的脉冲激光输出,并且和角锥棱镜一起改变腔内偏振态.实验中通过旋转角锥棱镜改变腔内的偏振态,调节腔内光强,得到被动锁模和被动调Q两种状态的脉冲输出,与理论分析的结果相一致.     

12.5μJ电光腔倒空锁模皮秒激光器的实验研究北大核心CSCD

报道了单脉冲能量大于10μJ的腔倒空锁模皮秒激光器。通过实验完成了光纤耦合激光二极管端面抽运Nd:YVO4晶体、半导体可饱和吸收镜(SESAM)锁模的大功率皮秒激光振荡器后,在锁模腔内插入BBO电光晶体,实现重复频率1Hz～10kHz连续可调的电光腔倒空锁模运转。在抽运功率17.9 W时,获得了单脉冲能量12.5μJ、重复频率10kHz、脉冲宽度24.7ps的激光输出。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.