稀疏性正则化的图像泊松去噪算法

去除医学、天文图像中的泊松噪声是一个重要问题,基于图像在过完备字典下的稀疏表示,在BayesianMAP框架下建立了稀疏性正则化的图像泊松去噪凸变分模型,采用负log的泊松似然函数作为模型的数据保真项,模型中非光滑的正则项约束图像表示系数的稀疏性,并附加非负件约束,保证去噪图像的非负性.基于分裂Bregman方法,提出...     

基于全变差的加权最小二乘法PET图像重建

传统的加权最小二乘法、惩罚项加权最小二乘法虽然能够重建得到较好质量的图像,但在欠采样的条件下不能很好的拟制噪声.全变差作为正则项已广泛用于图像重建中,利用图像稀疏的先验知识能够在欠采样的条件下很好的重建图像.本文结合加权最小二乘法和全变差的优点,构造了基于全变差正则项的加权最小二乘法目标函数,运用交替求解的方法,将目标函数分解为求解二次优化和全变差正则化的优化问题,并分别用超松弛迭代方法和梯度下降法求解这两个优化问题.采用Zubal模型对该算法与传统算法进行仿真验证比较,并用相关系数、方差、信噪比等参数描述图像重建质量.结果表明在欠采样条件下,该算法能够更好的拟制噪声,重构效果比传统的有明显地提高.     

一种应用于欠采样图像的自适应稀疏重建方法

针对图像稀疏重建中因使用固定参数的全变分(TV)正则项所带来的图像细节缺失和阶梯效应问题,提出了一种自适应二阶广义全变分(TGV)约束的图像稀疏重建算法.该算法采用二阶广义全变分模型权衡图像的一阶导数和二阶导数,且能够根据每次迭代得到的重构解及对应张量函数自适应地修正权重系数,实现图像的稀疏重建.与全变分正则模型和固定参数广义全变分正则模型相比,该算法能更好地保持图像轮廓和细节信息,提高重建图像的峰值信噪比(PSNR)和结构相似度(SSIM).     

基于先验信息和正则化技术的图像复原算法的研究

在湍流退化图像复原研究中,为了消除大气湍流的影响,提出了一种基于先验信息和正则化技术的盲解卷积图像复原算法.该算法是以极大似然估计为基本原理,将目标图像和点扩展函数的先验信息以惩罚项的形式引入到极大似然函数中,同时利用正则化技术优化目标图像和点扩展函数的估计过程,以增加极大似然估计算法的收敛性和稳定性.通过退化图像的复原实验结果表明,该算法在退化模型完全未知的情况下,可以有效的实现对湍流退化图像的盲复原.     

一种基于自适应正则化的图像超分辨率重建模型

为了解决图像超分辨率重建中稀疏系数解的不精确问题,提出了一种自适应正则化级联稀疏矩阵的超分辨率重建算法。根据图像自身的特性,采用自适应正则化项对图像局部进行处理,实现图像的局部约束,构建基于自适应正则化的稀疏矩阵函数。另外,为了提高图像的可清晰性,采用基于全局约束的退化模型改进处理结构。测试结果表明,与其他常用算法相比,提出的自适应正则化的图像超分辨率重建算法能够构建更清晰的超分辨率图像。     

基于图拉普拉斯正则化的PET图像核重建方法

正电子发射断层成像（Positron Emission Tomography,PET）在很多疾病的早期诊断中有重要的作用,PET图像重建的难点之一是如何在保持重建图像中病灶边缘特性的同时具有良好的去噪性能.针对此问题,本文提出了一种结合图拉普拉斯正则化和深度图像先验的PET图像核重建方法 .设计了改进的U-net神经网络,将PET前向投影模型中的核系数表示为神经网络的输出;通过先验图像构建图拉普拉斯矩阵,重建问题被建模为基于神经网络的带图拉普拉斯正则化项的最大似然函数优化问题.利用优化转移方法导出了收敛的迭代重建算法,每一次迭代包括由核重建方法更新图像和利用神经网络更新核系数两个步骤.仿真和临床实验结果表明,本文提出的方法在不同的指标下都有更好的重建效果,优于已有核重建方法以及最新的基于深度系数先验的重建方法 .     

基于专家场先验模型的图像超分辨重建算法

为了进一步提高图像超分辨率重建的质量,针对非局部集中稀疏表示算法中重建图像的噪声问题,提出了一种基于专家场先验模型的图像超分辨率重建改进算法。首先,利用专家场模型从图像训练集中学习整幅图像的先验知识建立全局先验模型;然后将学习到的先验信息用于非局部集中稀疏表示模型求解最优稀疏表示系数;最后,得到高分辨率图像估计。该算法在超分辨率重建迭代运算的同时,同步更新专家场模型参数,因此在不显著增加运算复杂度的情况下,通过选取合适的先验约束,有效地增强了图像重建的效果。实验结果表明:相比非局部集中稀疏表示算法,文中算法对无噪和有噪降质图像均能取得较好的峰值信噪比结果,并且能够进一步提高有噪图像的去噪效果。     

基于梯度保真项的低剂量CT统计迭代重建算法

针对低剂量计算机断层扫描(Computed Tomography,CT)重建图像时容易出现明显条形伪影这一现象,提出一种基于梯度保真项的低剂量CT统计迭代重建算法。该算法克服了原始全变分(Total Variation,TV)模型在抑制条形伪影和噪声的同时引入阶梯效应的缺点,首先把梯度保真约束项和能够区分图像平滑区和细节区的边缘指示函数应用到TV模型中得到基于梯度保真项的自适应全变分模型,然后再把新模型与惩罚加权最小二乘(Penalized Weighted Least Square,PWLS)重建算法相结合,使用交替方向迭代法得到最终的图像。采用Shepp-Logan模型来验证算法的有效性,实验结果表明,该算法不仅可以有效地去除条形伪影,还可以较好地保护图像的边缘和细节信息。     

多形态稀疏性正则化的图像超分辨率算法

 如何设计更加高效并能保持图像几何和纹理结构的多幅图像超分辨模型和算法是目前该领域有待解决的难点问题.针对图像的几何、纹理结构形态,分别建立符合类内强稀疏而类间强不相干的几何结构和纹理分量稀疏表示子成份字典,形成图像的多形态稀疏表示模型,进而提出一种新的基于多形态稀疏性正则化的多帧图像超分辨凸变分模型,模型中的正则项刻画了理想图像在多成份字典下的稀疏性先验约束,保真项度量其在退化模型下与观测信号的一致性,采用交替迭代法对该多变量优化问题进行数值求解,每一子问题采用前向后向的算法分裂法进行快速求解.针对可见光与红外图像序列进行了数值仿真,实验结果验证了本文模型与数值算法的有效性.     

基于Mumford-Shah正则项与L1数据拟合的PET图像重建方法

在正电子发射断层重建(PET)算法中,正则项常被用来抑制噪声。本文将Mumford-Shah(MS)正则项与最新的L1数据保真项相结合,构造出一种新的变分结构用以进行PET图像重建。为了简化计算,本文采用了Ambrosio和Tortorelli提出的Г-收敛逼近方法,将MS函式对边界积分转化为一类合适的辅助光滑函数的区域积分。在仿真测试中,将算法与传统滤波反投影(FBP)算法,最大似然法(EM),最小交叉熵法(MXE)作比较。通过实验结果的研究,对算法的效率和可行性进行了分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.