Pb（Mg_（1／2）W_（1／2））O_3－PbTiO_3－PbZrO_3陶

研究了Ｐｂ（Ｍｇ＿（１／２）Ｗ＿（１／２））Ｏ＿３－ＰｂＴｉＯ＿３－ＰｂＺｒＯ＿３陶瓷的化学不均匀性和介电行为。ＥＤＳ分析得到：体系中存在富Ｗ和富Ｚｒ、Ｔｉ的两相，平均分子式为：Ⅰ相（富Ｗ相）：Ｐｂ（Ｍｇ＿（０．２７０）Ｗ＿（０．３６７）Ｔｉ＿（０．１７８）Ｚｒ＿（０．１８２））Ｏ＿（３．０９１）；Ⅱ相（富Ｚｒ、Ｔｉ相）：Ｐｂ（Ｍｇ＿（０．１０９）Ｗ＿（０．１８７）Ｔｉ＿（０．２０４）Ｚｒ＿（０．３４０）Ｏ＿（２．７５８）。两相居里点分别为：Ｔ＿（ｃＩ）＜－６５℃，Ｔ＿（ｃＩ）＝１０５℃，图像处理得到两相的面积比为：Ｓ＿Ⅰ＝６８．６４％，Ｓ＿Ⅱ＝３１．３６％。按３－３模型复合，得到两相体积比为：７６％、２４％。复合相的介电性能符合Ｘ７Ｒ要求，｜ＴＣＣ｜≤１２％，且介－温曲线与原材料有相同的规律。     

用于永久性存贮器Pb（Zr0.52Ti0.48）O3薄膜的特性

用磁控射频溅射方法制备了Ｐｂ（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３薄膜。研究了制膜工艺对Ｐｂ（Ｚ０．５２Ｔｉ０．４８）Ｏ３薄膜相、结晶性和铁电特性的影响。实验表明，所制备的薄膜表面致密，光滑。此Ｐｂ（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３薄膜以钙钛矿结构为主，并具有较高的剩余极化、饱和极化和较小的矫顽场。从实验结果分析得。通过控制工艺条件所制得的单相钙钛矿型的Ｐｂ（Ｚｒ０．５２Ｔｉ０．４８）Ｏ３薄膜的铁电特性得     

Pb（Zr_（0．52）Ti_（0．48））O_3铁电薄膜的脉冲准分子激光沉积

用ＡｒＦ脉冲准分子激光在ＳＯＩ和Ｐｔ／ＳＯＩ衬底上沉积了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ＿３铁电薄膜，并用快速退火进行热处理。ｘ射线衍射、卢瑟辐背散射等分析表明：所结晶的薄膜是以（１００）和（１１０）为主要取向的多晶膜，且结晶情况与热处理温度和时间密切相关；ＰＺＴ薄膜呈现铁电性，其剩余极化Ｐｒ＝１５μｃ／ｃｍ￣２，矫顽电场Ｅｃ＝５０ｋＶ／ｃｍ；并且具有较高的介电常数和较高的电阻率。     

Fe_（76．5－x）Cu_（1．0）Nb_xSi_（13．5）B_（9．0）

研究了Ｎｂ含量ｘ对Ｆｅ＿（７６．５－ｘ）Ｃｕ＿（１．０）Ｎｂ＿ｘＳｉ＿（１３．５）Ｂ＿（９．０）纳米软磁合金的结构与磁性影响。研究结果表明，当Ｎ６含量ｘ约为３ａｔ％时，合金的软用性能最高；随Ｎｂ含量ｘ的增加，最佳软磁性能下合金显微组织结构中的αＦｅ－Ｓｉ纳米晶晶粒尺寸Ｄ、Ｓｉ含量、体积分数Ｖ＿ｃ均呈下降趋势，非晶相的短程有序范围δ增大；合金的磁性除与αＦｅ－Ｓｉ纳米晶有关外，还与合金中非晶相密切相关。用新近提出的双相无规磁各向异性模型讨论了合金的磁性与结构的关系。     

Na_2Mo_（0．1）S_（0．9）O_4（α）－Pr_2（SO_4）_3二元

应用差热分析、Ｘ射线粉末衍射及电测量技术对Ｎａ２Ｍｏ（０．１）Ｓ（０．９）Ｏ４（α）－Ｐｒ２（ＳＯ４）３体系进行了研究，结果表明，在Ｎａ２Ｍｏ（０．１）Ｓ（０．９）Ｏ４相中加入少量的Ｐｒ２（ＳＯ４）３就可以形成完全固熔体，且无任何相变存在，当Ｐｒ２（ＳＯ４）３含量达到４ｍｏｌ％时，电导率较纯Ｎａ２Ｍｏ（０．１）Ｓ（０．９）Ｏ４提高两个数量级（５５３Ｋ时，σ＝１．０９×１０（－３）Ｓｃｍ（－１）），同时还证明了该类导体的导电机理，揭示了电导率与有效空位浓度、掺杂剂浓度及温度之间的依赖关系。     

浸渍涂布法制备（CaxLa_l－x）FeO_3薄膜及其气敏效应的研究

利用含有Ｃａ，Ｌａ和Ｆｅ成分的水溶胶（摩尔比为Ｃａ：Ｌａ：Ｆｅ＝０．２５：０．７５：ｌ），经浸渍──提拉──干燥──焙烧过程分别在玻璃衬底及Ａｌ＿２Ｏ＿３基片上制备了薄膜。通过ＸＲＤ和ＸＰＳ分析表明玻璃衬底上的薄膜是成分准确的钙钛矿结构的（Ｃａ＿０．２５Ｌａ＿０．７５）ＦｅＯ＿３薄膜，而Ａｌ＿２Ｏ＿３基片上的薄膜是成分不确切且呈混合相的薄膜；借助ＳＥＭ观察了薄膜的表面微结构；测试Ａｌ２０３基片上的薄膜对酒精的气敏效应，发现在较低的工作温度下，薄膜对低浓度的酒精蒸气有高的灵敏度。     

MSnO_3和MSn_（0．5）Zr_（0．5）O_3（M＝Sr，Ba）的水热合

本文利用水热合成方法对ＭＳｎＯ３和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３（Ｍ＝Ｓｒ，Ｂａ）的合成进行了研究，并采用ＸＲＤ、ＳＥＭ和ＩＣＰ等方法对产物进行了表征，结果表明：在Ｍ（ＯＨ）２－ＳｎＯ２（或ＳｎＯ２＋ＺｒＯ２）－ＫＯＨ体系中，当ＫＯＨ／Ｓｎ和ＫＯＨ／（Ｓｎ＋Ｚｒ）≥３０时，２６０℃下晶化５～７天，可获得ＭＳｎＯ３和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３纯相，在Ｍ（ＯＨ）２－（ＳｎＯ２＋ＺｒＯ２）－ＫＯＨ－Ｈ２Ｏ体系中，可通过控制介质碱度来获得ＭＳｎＯ３＋ＭＺｒＯ３混合物和ＭＳｎ（０．５）Ｚｒ（０．５）Ｏ３，并根据合成规律初步探讨了反应过程．     

具有过量PbO的Ph（Zn_（1／3）Nb_（2／3））O_3－PbTiO_3系

合成了添加过量ＰｂＯ后的Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＰｂＴｉＯ３（ＰＺＮ－ＰＴ）系陶瓷，并研究了其相结构及介电性能、在（１—ｘ）ＰＺＮ—ｘＰＴ（０．１＜Ｘ＜０．２）系陶瓷体中，添加过量ＰｂＯ提高了钙钛矿结构的稳定性，但过多地添加ＰｂＯ不利于提高其介电性能，当ＰＴ的摩尔浓度为１４—１９ｍｏｌ％时，这些组分最大介电常数和温度的关系与频率无关，而其介电常数的温度特性仍随频率变化而弥散     

Pb（Ni_（1／3）Nb_（2／3））O_3－PbZrO_3－PbTiO_3三

对Ｐｂ（Ｎｉ１／３Ｎｂ２／３Ｏ３－ＰｂＺｒＯ３－ＰｂＴｉＯ３，即ｘＰｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３－（１－ｘ）Ｐｂ（ＺｒδＴｉ１－δ）Ｏ３（０．２≤ｘ≤０．６，０．２≤δ≤０．５）三元系固溶体的压电性能进行了研究，结果表明材料压电活性较高的配方位于准同型相界（ＭＰＢ）附近，压电常数ｄ３１值可达２６０×１０－１２Ｃ／Ｎ．讨论了结构相变对压电性能的影响．     

用Sol─Gel法制备PZT铁电陶瓷及薄膜

用Ｓｏｌ－Ｇｅｌ法制备了Ｐｂ（Ｚｒ＿（０．５）Ｔｉ＿（０．５））Ｏ＿３（ＰＺＴ）铁电陶瓷与薄膜，观察了它们的结晶情况并测定了它们的电学性能。利用Ｓｏｌ－Ｇｅｌ法，可降低ＰＺＴ陶瓷粉料的预烧温度约２００℃，所得陶瓷致密，晶粒均匀；具有较好的介电性能。ＰＺＴ陶瓷显示弥散相变特征。ＰＺＴ薄膜的晶化受基底影响很大。基底晶格越完整，与ＰＺＴ薄膜的晶格失配率越小，ＰＺＴ薄膜的晶化就越好。采用ＰｂＴｉＯ＿３过渡层促进ＰＺＴ薄膜在镀铂硅片上晶化。ＰｂＴｉＯ＿３过渡层与ＰＺＴ薄膜构成串联电路。其表现电学性能与相应的ＰＺＴ体材料相近。     

Preparation of (001)-oriented Pb(Zr,Ti)O3 thin films and their piezoelectric applications

Preparation of (001)-oriented Pb(Zr,Ti)O(3) (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001) oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d(31), of -100 pm/V, and an extremely low relative dielectric constant, epsilon(r), of 240. The PZT thin films on Si substrate had a very high d(31) of -150 pm/V and an epsilon(r) = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.     

新型脉冲激光能量计用无铅(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3铁电薄膜的制备及其激光感生热电电压信号的研究

采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。     

Effects of the sol-concentration on the structural and dielectric properties of Pb(0.3)Sr(0.7)TiO(3) thin films derived by the sol-gel method

Pb(0.3)Sr(0.7)TiO(3)(PST) thin films were deposited on Pt coated Si(100) substrates by sol-gel techniques using different sol-concentrations. The structural and dielectric characteristics of lead strontium titanate (PST) thin films as a function of the sol concentration were investigated. PST thin films reveal a columnar texture through the thickness when the sol-concentration is lower than 0.30 M. PST thin films derived from 0.35 M sol show better dielectric characteristics with the dielectric constant, dielectric loss, tunability, and field of motion (FOM) (tunability/ dissipation) of 200, 0.01, 47% and 47, respectively. The temperature dependence of the dielectric constant, dielectric loss and tunability of PST thin films were investigated in the temperature range of -140 to 120 degrees C exhibiting a dielectric peak of about -45 degrees C.     

Preparation of (001)-oriented Pb(Zr,Ti)O/sub 3/ thin films and their piezoelectric applications

Preparation of (001)-oriented Pb(Zr,Ti)O₃ (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001)-oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d₃₁, of -100 pm/V, and an extremely low relative dielectric constant, epsiv_r, of 240. The PZT thin films on Si substrate had a very high d₃₁ of -150 pm/V and an epsiv_r = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.     

Cd_(1-x)Zn_xS(x=0.88)多晶薄膜的制备及性能研究

采用真空共蒸发法制备了Cd1-xZnxS多晶薄膜,研究了Cd1-xZnxS(x=0.88)多晶薄膜的结构与光电特性。XRD的结果表明,0x≤0.9,Cd1-xZnxS薄膜为六方结构,高度择优取向;荧光光谱分析与Ve-gard定理的结果以及石英振荡法监测的Cd1-xZnxS多晶薄膜的组分吻合;制备的Cd1-xZnxS多晶薄膜的光学透射谱的吸收边随Zn含量的增加发生蓝移,其光学能隙调制在CdS与ZnS能隙之间;最后测量了Cd1-xZnxS薄膜室温电阻率及暗电导率随温度的变化情况,计算了Cd1-xZnxS薄膜的电导激活能。     

Microsphere templating as means of enhancing surface activity and gas sensitivity of CaCu(3)Ti(4)O(12) thin films

Chemical and physical synthesis routes were combined to prepare macroporous CaCu(3)Ti(4)O(12) thin films by pulsed laser deposition onto poly(methyl methacrylate) (PMMA) microsphere templated substrates. These films showed remarkably enhanced gas sensitivity compared with control films deposited on untreated substrates, demonstrating the virtues of combining thin film physical vapor deposition (PVD) techniques in concert with colloidal templates to produce macroporous structures of inorganic films with enhanced surface activity for applications in chemical sensors, catalysts, and fuel cells.     

The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition

The preferred (110) oriented aluminum nitride (AlN) thin films have been prepared by pulsed laser deposition on p-Si (100) substrates. The films were characterized with X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscope (AFM). The results indicate that the AlN thin films are well-crystallized when laser energy is higher than 300 mJ/puls. The AFM images show that the surface roughness of the deposited AlN thin films gradually increases with increasing laser energy, but the surface morphologies are still very smooth. The crystallinity and morphology of the thin films are found to be strongly dependent on the laser energy.     

退火温度对Pb(Zr_(0.53)Ti_(0.47))O_3薄膜结构及其性能的影响

采用sol-gel法在Pt/Ti/SiO_2/Si衬底上制备Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.利用X射线衍射仪(XRD)和原子力显微镜(AFM)对其晶格结构和微观形貌进行了表征,通过改变退火温度制得了具有单一钙钛矿结构的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜.然后将该薄膜与环氧树脂形成复合结构材料.对其铁电性能以及复合材料的阻尼性能进行了测试,结果表明,退火温度的升高有利于改善薄膜的铁电性能,在750℃下退火的Pb(Zr_(0.53)Ti_(0.47))O_3薄膜,其剩余极化值2Pr达到了68.6μC/cm~2, 矫顽场强2E_c达到158.7kV/cm;同时退火温度的升高还有利于薄膜致密度的提高,对复合材料的阻尼性能也有一定的改善,当退火温度达到800℃,复合材料的阻尼损耗因子达到最大值,阻尼温域最宽,阻尼性能最好.     

Terahertz dielectric response of ferroelectric Ba(x)Sr(1-x)TiO3 thin films

Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films varies with the films compositions. Among the compositions of Ba(x)Sr(1-x)TiO(3) films with different Ba/Sr ratios, Ba(0.6)Sr(0.4)TiO(3) has the highest dielectric constants and the shortest dielectric relaxation time.     

Si(100)衬底上PLD法制备高取向度AlN薄膜

采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引 入缓冲层TiN和Ti_0.8Al_0.2N,制备了结晶质量优异的A1N薄膜,X射线衍射(XRD)及反射 式高能电子衍射(RHEED)分析表明A1N薄膜呈(001)取向、二维层状生长.研究发现,薄膜 的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO／Si衬底上的A1N薄膜呈三维岛状生 长;而同时引入缓冲层TiN和Ti_0.8Al_0.2N时,A1N薄膜呈二维层状生长.此外,激光能量密 度大小对A1N薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积 物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).