基于动态元件匹配的CMOS集成温度传感器设计

利用CMOS工艺下衬底型双极晶体管的温度特性,设计了一种精度较高的温度传感器.动态元件匹配的应用很好地解决了由于集成电路工艺误差引起的不匹配对温度传感器性能的影响.采用CSMC 0.5μm混合信号工艺仿真,结果显示,该温度传感器精度是0.15℃,线性度是0.15%.多个芯片实测结果表明:温度传感器精度小于0.6℃,线性度小于0.68%,功耗为587μW,芯片面积为225μm×95μm,输出为模拟电压信号,便于采集,为后端处理和应用提供方便.     

与绝对温度成正比BiCMOS集成温度传感器设计

利用工作在弱反型区MOS管饱和漏电流的指数特性,设计了一款与绝对温度成正比(PTAT) BiC-MOS集成温度传感器,主要电路由PTAT电流产生电路、启动电路和输出电路3部分组成,电路结构简单,体积小.测试结果表明,该温度传感器的精度小于0.5℃,线性度小于0.65％,灵敏度为2.5μA/℃,芯片面积为150 μm×75 μm,具有线性度及灵敏度高的优点,可广泛应于各类便携式电子产品中.     

一种可应用于无源RFID的新型CMOS温度传感器设计

针对无源RFID低功耗的应用需求,基于SMIC 0.18μm CMOS工艺设计了一种低功耗CMOS温度传感器。该传感器首先基于双晶体管电路将温度信号转换为与之成正比的电压信号,并进一步转换为电流信号,然后通过振荡器电路转换为频率信号,最终经计数器后转换为与温度对应的二进制数字信号输出。仿真结果表明,在-20～100℃范围内传感器具有良好的线性度和温度精度,且传感器总功耗仅为1.05μW,可满足无源RFID领域应用需求。     

Q波段2W平衡式GaAs pHEMT功率MMIC

报道了一款采用0.15μm GaAs功率MMIC工艺研制的Q波段平衡式功率放大器芯片。芯片采用Lange耦合器进行功率合成。在该平台工艺规则限制条件下,按照传统设计方法设计的Lange耦合器无法满足平衡式放大器设计需求。文中提出了解决方法,对Lange耦合器的端接阻抗进行优化,使得设计的Lange耦合器物理尺寸符合工艺规则要求。放大器采用三级放大拓扑结构,同时综合应用三维和平面场仿真技术,提高电路仿真精度。芯片在43~46GHz频带范围内、6V偏置、连续波工作条件下,饱和输出功率大于33dBm,效率大于15%,功率增益大于14dB,线性增益为16dB,线性增益平坦度小于±0.8dB,芯片面积3.9mm×4.8mm。     

Ka波段5W GaAs PHMET功率MMIC

报道了一款采用0.15μm GaAs功率MMIC工艺研制的Ka波段功率放大器芯片。芯片采用四级放大拓扑结构,在29～32GHz频带范围内6V工作条件下线性增益25dB,线性增益平坦度小于±0.75dB;饱和输出功率大于5W,饱和效率大于20%,功率增益大于22dB;1dB压缩点输出功率大于36.5dBm,效率大于18%。     

Ku波段12 W GaAs pHMET功率MMIC

报道了一款采用0.25μm GaAs功率MMIC工艺研制的Ku波段功率放大器芯片。芯片采用三级放大拓扑结构,末级输出匹配电路按照高效率设计,同时优化前后级推动比控制前级电流。级间采用有耗匹配电路设计,提高大信号状态下的稳定性。在16~18GHz频带范围内漏压8.5V、脉宽1μs、占空比40%的工作条件下线性增益大于25dB;饱和输出功率大于12 W,饱和效率大于32%,功率增益大于21dB,功率增益平坦度小于±0.5dB。芯片尺寸为3.5mm×4.6mm。     

基于0.18μm 标准CMOS工艺的嵌入双精度温度传感器的无源超高频RFID标签芯片

文章提出了一种符合EPC Gen-2协议嵌入双精度温度传感器的无源超高频RFID电子标签芯片。设计了一种采用双精度工作模式的新型温度传感器,它能够在满足传感器精度要求的条件下缩短传感时间和降低标签芯片的功耗。标签芯片集成了一个全MOS管构成的射频整流器和一个单多晶硅栅标准CMOS的非易失性存储器。采用0.18μm标准CMOS工艺集成实现了无源超高频RFID电子标签芯片。芯片面积为1mm2,片上非易失性存储器容量为192bit。芯片被压焊到PCB天线上实现了一个完整的标签。当温度传感器关闭/启动时,电子标签的灵敏度为-10.7dBm/-8.4dBm。电子标签达到的最大读/传感距离为4m/3.1m @2W EIRP。在5℃至15℃（-30℃至50℃）的温度范围内,传感器的误差为-0.6℃/0.5℃(-1.0℃/1.2℃)。在高（低）精度模式下,温度传感器的精度为0.01℃(0.18℃)。     

0.15μmInGaAs PHEMT50MHz-1GHz高线性CATV放大器设计

本文对应用于CATV（有线电视）的50MHz - 1GHz频段的低噪声和高线性度单片微波集成电路（MMIC）放大器进行了设计。设计采用并联电压交流负反馈和源极电流负反馈相结合以扩大带宽和高线性度。本文引入一种新的共源共栅管基极偏置以稳定工作点来进一步提高线性度。该电路由台湾稳懋半导体公司的0.15μm InGaAs PHEMT工艺制作。测试在有线电视频段50MHz-1GHz范围内和75欧姆测试匹配系统中进行。.测试结果表明芯片小信号增益为16.5dB,带内波动小于 1dB。噪声指数在带内为1.7-2.9dB。IIP3高达16dBm。CSO和CTB分别为68dBc和77dBc。芯片面积为0.56 mm2,而功耗在5V供电下为110mA。测试结果表明芯片展现了出色的噪声性能和高线性度,非常适合于有线电视系统。     

开关式低压CMOS温度传感器的设计与实现

介绍了一种基于0.18μm CMOS工艺,具有开关功能的低压集成温度传感器。该温度传感器利用半导体pn结的电流电压与温度有关的特性,获取双极晶体管基极-发射极电压差值ΔVBE,采用仪表放大器进行后级放大。仪表放大器由两个采用折叠式共源共栅结构,带有PD开关信号的运算放大器作为反馈系统,放大倍数为7。用ADE工具,对整个电路在工作电压1.8 V、偏置电流20μA下进行仿真,得到其精度为1.58 mV/℃,再在不同工艺角下进行仿真验证。版图总面积为320μm×280μm。该设计已经在一款数字视频芯片中得到实现,用于实时检测芯片温度。实际测试结果与模拟仿真结果基本相同。     

一种电流型温度传感芯片设计

设计并实现了一种电流型温度传感芯片。分析了测温原理和厄利效应对测温精度的影响,提出了一种集电极-发射极电压补偿电路,利用一组电流镜和匹配电阻将输出电流和温度之间的传递函数线性化,提高了芯片的线性度和测温精度。设计了反向偏置保护电路,增大芯片可承受的反向电压。芯片采用40 V互补双极工艺设计并流片。测试结果表明,芯片在-55～150 ℃温度区间内的非线性误差为±0.2 ℃,测温精度小于±0.3 ℃。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.