海底光缆分布式监测技术研究及应用现状

海底光缆是现代信息网络的重要组成部分,对其性能和物理状态的监测是网络维护工作的重要方面,利用分布式光纤传感技术对海底光缆扰动状态进行监测,既可达成对海底光缆故障的定位分析,也可用于对周边环境和目标状态的监测,具有广阔的应用场景。本文对当前主要的适用于水下光缆的分布式光纤传感技术现状进行了梳理,阐述了主要技术方向的基本原理,分析了其应用场合和主要性能特性,并展望了未来水下光缆扰动监测技术的研究和应用发展。     

分布式光纤振动检测方案及应用

在分析网络通信安全需求的基础上,阐述了光纤传感技术和光缆状态实时监测技术对网络通信安全的保障作用。介绍了光纤传感技术的发展历史以及具有代表性的光纤传感器,然后介绍了分布式光纤振动传感系统的原理和工作方式,并对该系统的解调方法进行了分析。为了获得更高的信噪比,通过实验分析了数据解调中延迟差分对信噪比的影响。结果表明,在一定范围内,延迟时间与信噪比正相关。     

分布式海底光缆监测系统的研究与应用北大核心

海底光缆敷设在极其复杂的海洋环境中,极易受到各种外界因素的破坏,其中锚害是海底光缆通信的最大威胁。针对现有海底光缆监测技术的局限性,提出将双M-Z(马赫-曾德尔)分布式光纤振动传感技术用于海底光缆的在线监测。通过理论推导建立了分布式海底光缆监测系统传感、定位的数学模型;并通过综合利用海底光缆路由雷达监测系统,有效解决了实用中监测系统可能存在的虚警问题,提高了系统的可靠性。     

分布式海底光缆监测系统的研究与应用

海底光缆敷设在极其复杂的海洋环境中,极易受到各种外界因素的破坏,其中锚害是海底光缆通信的最大威胁。针对现有海底光缆监测技术的局限性,提出将双M-Z(马赫-曾德尔)分布式光纤振动传感技术用于海底光缆的在线监测。通过理论推导建立了分布式海底光缆监测系统传感、定位的数学模型;并通过综合利用海底光缆路由雷达监测系统,有效解决了实用中监测系统可能存在的虚警问题,提高了系统的可靠性。     

基于多维参量分布式光纤传感的架空输电线路覆冰监测技术

对比总结了典型DOFS技术的基本原理与系统结构,对现有输电线路覆冰监测技术发展现状进行介绍。在此基础上提出了一种多维参量分布式光纤传感技术,能够实现对线路的应变、温度、振动、衰耗等状态参数进行分布式的实时监测。与现有的单参量、双参量传感监测方案相比,使用多维参量方案对线路进行融合感知,可以有效提高监测的准确度,降低误判率、误报率,为输电线路的安全稳定运行提供重要保障。     

基于光纤传感技术的工程监测应用研究

光纤传感技术作为当前热门技术之一,在工程监测领域有着许多重要应用。通过探讨光纤传感技术在工程形变监测中的应用案例,展示了其在工程监测领域的重要性。光纤传感技术利用光纤作为传感元件,可以实现对形变的连续、实时监测,并提供高精度的监测数据。通过布设应变光缆和温度补偿光缆,在合璧津高速公路K134段高架桥上进行了监测实验。结果表明,光纤传感技术能够准确评估结构的变形情况,并通过温度补偿算法消除了温度变化对数据的影响。通过几何方法计算沉降位移,可以实现对沉降位移的估算。     

基于分布式光纤传感技术的智能电网输电线路在线监测

提出并研制了基于多参量分布式光纤传感技术的输电线路覆冰舞动监测方案。该技术能够对输电线路覆冰、舞动以及雷击等异常现象进行预警,从而实现对输电线路运行状态的在线安全健康监测。     

面向专网的通信光缆传输性能监测系统

相比较传统的光时域反射仪,通信光缆性能监测系统集成了计算机技术、远程通信技术以及光纤测量技术等,可以实现对于通信光缆的远程化、自动化、分布式在线实时监测,同时对收集到的通信光缆的状态信息进行整理和存储,可以通过自动监测、网管警告、故障定位、线路管理等多样化的功能,保证通信光缆的运行安全.本文以铁路专网为例,对通信光缆传输性能监测系统的应用进行了简要分析.     

通信光缆干线管理与维护

通信光缆已经成为现代通信系统中不可或缺的组成部分,在获得大规模应用的同时,其安全问题也越显突出。本文分析研究威胁通信光缆干线安全运行的主要因素及其特点,总结通信光缆干线的管理维护措施和方法,介绍光缆自动监测系统和基于分布式光纤传感技术的光缆安全预警系统两种技防手段,并对其优缺点进行分析、论述。     

一种EPON光缆在线监测系统

针对安徽省电力系统EPON网络的特点及电力系统现有光缆监测技术特点,提出一种"OTDR+光开关+合波器+光反射器(终端过滤器)"光缆在线监测系统设计方案。EPON光缆在线监测系统能够实时监测光缆线路的性能变化,及时发现故障隐患,迅速定位障碍点,有效减少故障的历时,从而降低因温度和应力等因素带来的电力系统光纤通信网的故障发生。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.