VxWorks下多PCI设备的驱动设计与实现

VxWorks操作系统目前在嵌入式系统中的应用越来越广泛。其BSP（板级支持包）中的驱动程序为VxWorks访问硬件提供支持。本文详细说明了VxWorks下多PCI设备的驱动设计与实现。     

基于VxWorks的板级支持包的开发

介绍了板级支持包(BSP)的开发，主要结合Intelixp2400网络处理器来介绍一个具体BSP的开发过程，其中包括内存分配，中断处理以及串口和网口的驱动过程。     

VxWorks操作系统在S3C4510B上的移植

VxWorks是一种支持多种体系结构处理器的操作系统，有很强的移植性。描述了将VxWorks移植到基于S3CA510B处理器目标板上的方法与过程。首先介绍了VxWorks和板级支持包BSP的概念并分析了VxWorks的启动过程和S3CA510B处理器，并简单说明了将如何搭建移植环境，然后着重讨论了在该开发板上BSP的设计实现以及VxWorks的移植方法。     

三层以太网交换机的BSP设计及实现

文章介绍了三层交换机的硬件设计构架,重点对其板级支持包(BSP)及系统启动过程做了详细的分析;不仅分析了启动引导部分和系统启动部分的设计体系,还描述了启动引导部分和系统启动部分的实现过程,以及BSP主要函数实现的功能及相互之间的关系.最后,针对本三层交换机系统做了优化.     

基于uC/OS-II实时操作系统在竞赛中的应用

为了更好的接触嵌入式系统、提高竞赛的水平和层次，采用开放源代码的uC/OS-II内核作为底层操作系统，通过一系列的移植、裁剪，和板级支持包（BSP）的搭建，该底层系统为调试程序、修改参数、实时反馈信息等必要工作提供了极大地便利，并且保证了较好的实时性。     

基于复小波包基函数调制的跳频多址通信系统

该文给出了一种生成复数小波包基函数的方法，提出了一种基于复小波包基函数调制的跳频多址通信系统的模型。该系统在多径衰落时变信道下采用判决反馈均衡器接收的性能与基于实小波包基函数调制的同类系统相比有明显改善，且通过采用空间分集接收，可显著提高系统的误码率性能。该系统易于支持多速率话音和数据业务，具有频谱利用率高，抗单音干扰能力较强和保密性高等优点。     

Enea Linux帮助在下一代网络基础架构中实现Linux实时操作

Enea公司推出Enea Linux,同时发布了可满足下一代网络基础架构需求的补充性创新技术。 Enea Linux由Yocto项目开源配置和构建技术提供技术支持,其中包括有120多个专门针对电信需求而选择的数据包。Yocto提供了标准化功能和工具,并确保能够快速访问最常用的硬件架构的最新板级支持包（BSP）。     

μC/OS-III在80386保护模式下的移植

文章介绍了一种将μC/OS-III移植到Intel 80386处理器上，使其能够借助于DOS的资源，在保护模式下正常运行的方法。通过解析内核相关代码、CPU相关代码和板级支持包代码这三部分代码，讲述了将实时操作系统μC/OS-III移植到80386处理器保护模式下的全过程。最后给出了在保护模式下运行μC/OS-III的实例。     

业界动态

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跨平台模块化嵌入式多任务软件框架研究

针对嵌入式实时多任务应用软件的特点,设计了一种跨操作系统平台和硬件资源平台的软件框架,该框架以软件功能为模块划分的依据进行软件模块的加卸载等操作,实现了上层应用软件与底层硬件、操作系统及板级支持包的隔离,提高了嵌入式实时多任务应用软件的可靠性、复用性和可移植性。该软件框架现已应用于某试验系统数据处理软件中,实现了数据处理软件的良好跨平台和模块化特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.