基于NSCT子带自适应Bayes阈值图像去噪方法

利用非下采样Contourlet变换（NSCT）平移不变性、多分辨率、多方向的优点,提出了一种基于非下采样Contourlet变换的子带自适应Bayes阈值图像去噪算法。该算法将源图像分解至NSCT变换域．能根据不同尺度、不同方向的子带能量,自适应调整去噪阈值。实验表明,与Contourlet多尺度阈值去噪、Conto...     

Contourlet域自适应萎缩阈值去噪方法

受到传输距离、电子干扰等多方面因素的影响,在测量船远程故障视频诊断系统中,地面接收到的设备状态图像不可避免地混合有随机噪声,因此图像去噪是设备状态图像预处理阶段重要的任务之一。Contourlet变换是一种优异的图像去噪工具,但固定的萎缩阈值不能自适应于Contourlet系数的邻域信息。构造了一种利用Contourlet系数邻域信息的自适应萎缩阈值,用该阈值结合Contourlet循环平移方法实现图像去噪,实验结果表明,该方法可以提高去噪后图像的峰值信噪比。     

基于Contourlet变换的红外图像梯度自适应去噪

对Contourlet变换图像去噪阈值的选择进行了研究.分析了可见光图像去噪和红外图像去噪的特点,提出了红外图像梯度能量自适应去噪算法.通过实验证明,与传统的几种去噪相比,这种方法更好的保留了图像的轮廓细节,提高了图像的PSNR值,增强了去噪后的视觉效果.     

一种基于非下采样Contourlet变换的去噪算法

文章提出了一种新的去噪算法,算法是基于非下采样Contourlet变换(NSCT)的自适应阈值。首先需要对含噪图像进行非下采样Contourlet变换,然后得到各个尺度各个方向子带的系数。为了克服软、硬阈值函数的缺点,提出了一种自适应的新阈值函数。仿真实验表明,文章方法在峰值信噪比(PSNR)、信噪比(SNR)、均方误差(MSE)与视觉效果上均优于其他去噪算法。     

基于Contourlet域HMT模型的红外图像去噪算法

去噪是图像处理的一个关键问题,文章提出了基于多尺度分析下的红外图像去噪算法.在对红外图像噪声特点进行详细分析的基础上,验证了红外图像的Contourlet子带系数满足广义高斯(Generalized Gaussian Distribution)GGD模型,提出了用Contourlet域隐马尔可夫树(Contourlet domain Hidden Markov Trees)CHMT来进行红外图像的去噪.将算法应用于几种红外图像,对红外图像去噪视觉效果和峰值信噪比两方面进行比较,文中提出的去噪方法取得了较好的效果,尤其是在边缘保持方面.     

一种Contourlet循环平移自适应阈值SAR图像去噪算法

针对传统阈值算法缺乏自适应性的缺点,利用Contourlet多方向性和各向异性的优点,提出了一种基于Cont-oudct循环平移自适应闲值的SAR图像去噪算法.利用sigmoid函数构建一种新的自适应网值函数.根据Contourlet不同方向子带系数的特点,动态调整阈值函数中的参数.以获得合适的阈值对Contourlet系数进行处理.同时为了抑制图像边缘附近的伪吉布斯效应,引入循环平移算法来抑制人为干扰.分别利用4种经典的阈值算法和本文算法,对实测SAR数据进行相干斑抑制,试验结果表明,Contourlet循环平移自适应阚值SAR图像去噪算法在平滑图像的同时更好地保持了图像本身的纹理信息,图像的视觉效果优于其他算法,等效视数和边缘保持指数分别提高了86.22和O.3.     

基于非抽样Contourlet变换的图像增强

以非下采样(Contourlet)变换为基础,提出了一种新的图像去噪方法,首先对含噪图像进行非下采样轮廓变换,然后采用自适应阈值对变换系数进行处理,最后重构回原图像。     

结合Contourlet变换的Bayes自适应图像去噪算法

提出了结合Contourlet变换的Bayes自适应图像去噪算法。充分利用Contourlet变换的局部性、多分辨率、各向异性等优点。通过Contourlet变换得到图像不同尺度不同方向上Contourlet系数矩阵,实现了建立在对图像多尺度几何分析基础上Bayes估计自适应图像去噪算法。实验表明,新算法能够获得良好的视觉效果并且有效地提高了去噪图像的PSNR值,同时有效的避免了“过扼杀”系数现象,更好地保留了图像的纹理和细节。     

基于CHMM 的尖锐频率局部化Contourlet 域图像去噪

提出了一种基于上下文信息隐马尔科夫模型（CHMM）的尖锐频率局部化Contourlet 域图像去噪方法。首先,对噪声图像进行循环平移操作,再利用尖锐频率局部化Contourlet 变换对平移后的图像进行分解,解决了原始Contourlet 变换频率非局部化及缺乏平移不变性的问题,抑制图像在奇异点处产生的伪吉布斯现象。然后,设计一种新的上下文构造方案,针对图像高频子带系数构建CHMM 进行去噪处理。最后,执行尖锐频率局部化Contourlet 逆变换以及逆向循环平移操作获得最终的去噪图像。文中方法采用有效的变换机制并利用上下文信息构建了一个全面的统计相关模型,充分表达了轮廓波高频子带系数在尺度间的持续性、尺度内的多方向选择性和空间邻域内的能量聚集特性,更加有利于图像的去噪处理。实验结果表明:该方法在提高去噪图像PSNR 值的同时进一步改善了其视觉效果,去噪性能优于基于小波变换和原始Contourlet 变换的去噪方法。     

遥感图像的NSCT自适应阈值去噪方法

提出了一种基于非下采样Contourlet变换(NSCT)相结合的遥感图像自适应阈值去噪方法。通过小波估计被噪声污染遥感图像的噪声强弱,根据噪声的强弱以及NSCT的分解特点及系数所在邻域的特性,给出不同尺度不同方向的自适应阈值。仿真实验结果表明,与小波硬阈值、Contourlet硬阈值和基于非下采样Contourlet硬阈值去噪方法比较,该方法在提高了图像的峰值信噪比的同时也减少了Gibbs现象,图像视觉效果也得到明显的改善。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.