液晶显示技术的专利分析

介绍了液晶显示的工作原理,通过对涉及液晶显示技术的中国已公开专利进行检索,对检索结果在申请数量随时间分布、专利申请类型、主要申请人、中国主要申请人、申请人国家/地区分布以及技术领域分析等几方面进行了统计分析.从统计结果可以看出LCD显示技术以日本、韩国和中国占主导地位,并自2000年来一直保持着较强的发展趋势.     

国内LCD散热技术相关专利表现及发展建议

液晶显示是当代持续发展速度最快的产业之一,中国也逐渐发展为全球最大的液晶显示生产基地和消费市场,通过专利布局占领中国市场已成为跨国企业争夺和控制国外市场的主要手段之一。本文通过分析LCD显示器散热领域专利申请的年份分布和区域分布,总结了液晶显示器的国内发展状况,为我国相关企业了解相关专利发展情况、主要竞争对手以及技术发展趋势提供了具有参考价值的信息。     

电子纸显示技术

以德温特世界专利索引数据库(WPI)中公开的电泳显示和胆甾型液晶显示技术的相关申请为基础,对电子纸所使用的双稳态显示技术的专利申请情况进行了统计和分析,并针对该领域的主要申请人近年来的技术研发重点进行了介绍,从而有助于了解电子纸显示技术的最新进展.     

液晶显示技术的回顾和展望

本文简要地回顾并展望了液晶显示技术的发展。液晶显示技术的发展可分为三个阶段：液晶显示技术完善和开拓阶段；向ＣＲＴ技术挑战阶段；向印刷技术挑战阶段。液晶显示最终发展成书本式多媒体终端显示，人们用它可随时随地实时地在全球范围内进行信息交流。     

“液晶显示技术”专版顾问名单:

为了引导液晶显示技术行业的顺利发展,本刊特开辟“电子元器件”栏目“液晶显示技术”专版。 “液晶显示技术”专版主要介绍当今世界液晶显示技术的发展现状、全球液晶显示器的市场行情,代表世界液晶显示技术的现状和发展水平的日本、韩国、中国大陆和台湾的发展情况;详细报道我国液晶显示技术企业的近况、技术进步和市场竞争能力,及政府部门对液晶显示技术发展的新举措。 “液晶显示技术”专版将成为具有权威性、技术行和可读性的学术性板块,是您了解世界液晶显示技术进程的绝佳的参考资料。 同时,特聘请我国液晶显示技术行业的专家作为“液晶显示技术”专版的顾问。     

“液晶显示技术”专版顾问名单

为了引导液晶显示技术行业的顺利发展,本刊特开辟“电子元器件”栏目“液晶显示技术”专版。“液晶显示技术”专版主要介绍当今世界液晶显示技术的发展现状、全球液晶显示器的市场行情,代表世界液晶显示技术的现状和发展水平的日本、韩国、中国大陆和台湾的发展情况;详细报道我国液晶显示技术企业的近况、技术进步和市场竞争能力,及政府部门对液晶显示技术发展的新举措。“液晶显示技术”专版将成为具有权威性、技术行和可读性的学术性板块,是您了解世界液晶显示技术进程的绝佳的参考资料。同时,特聘请我国液晶显示技术行业的专家作为“液晶显示技术”专版的顾问。     

日本液晶显示产业发展研究

日本是液晶显示技术发展的主要创造者与推动者之一,液晶显示技术最早源于美国,但将这个技术产业化的是日本.发展至今,日本在液晶显示技术方面一直处于领先地位,如:垄断了液晶显示上游的材料技术,以及世界上第一条第8代液晶面板生产线等等.     

人脸识别技术专利分析

随着图像图形处理技术的发展,人脸识别技术日益受到重视,成为研究的热点,近十几年来专利申请量有了飞速增长.本文通过对人脸识别技术的国内专利申请从宏观角度在年度申请量、申请人分布情况、技术领域进行了分析,并对主要申请人在该领域专利申请的特点进行了阐述,最后分析了目前人脸识别技术的研究方向.     

图像领域基于转码技术的专利分析

【】视频转码技术在视频领域的应用非常广泛,随着物联网技术的发展以及对存储空间以及分辨率等的要求提高,在图像、视频、文本数据等不同形式之间进行转换的技术成为热点。本文对该领域的专利申请情况进行了统计分析,重点分析了专利申请量随着年份的变化,不同国别、不同省市的专利申请情况。最后通过对该领域重要专利技术的分析,得出该技术发展的趋势。     

通信领域2G、3G、4G技术专利申请状况分析

【】移动通信技术的发展日新月异,随之相应的专利申请量也日益增多,本文对移动通信领域2G、3G、4G技术在中国的专利申请状况进行了分析,给出了2G、3G、4G技术在中国的专利申请量分布,介绍了申请人排名,分析了通信领域主要申请人在中国的历年申请状况。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.