MOM/Lanczos-AWE算法快速求解良导体柱的RCS宽带与宽角响应

考虑导体柱的电磁散射 ,由于一般实际导体为良导体 ,若利用表面阻抗的边界条件 ,则良导体柱的电场积分方程 (EFIE)为第二类Fredholm积分方程 ;将矩量法 (MOM )应用到该积分方程时 ,该积分方程转化为第二类Fredholm矩阵方程。本文提出了一种求解第二类Fredholm矩阵方程的Lanczos AWE递归迭代快速算法 ,首先采用Lanczos技术快速求解在某一给定频率或角度时第二类Fredholm矩阵方程 ,得到在该频率或角度时良导体的表面电流分布 ;然后采用渐近波形估计 (AWE)技术求取所考虑的频段内任意频率或角度范围内任意角度时良导体的表面电流分布。根据表面电流分布预测了任意形状良导体柱的单站雷达散射截面 (RCS)的宽带与宽角响应。计算结果表明Lanczos AWE技术可大大加快MOM法的计算速度。     

渐近波形估计技术应用于导体柱RCS方向图的快速获取

本文基于渐近波形估计(AWE)技术和矩量法(MOM)快速预测任意形状导电柱体(PEC)的单站RCS方向图.首先采用矩量法求解导体柱的电场积分方程,得到导体柱在某一给定方向入射波照射下的表面电流的低阶矩量,然后利用AWE技术求出在任意方向入射波照射下用有理分式函数表示的表面电流,进而计算出RCS方向图.计算结果表明AWE完全能逼近MOM精确计算的曲线,同时在计算速度上可加快几十倍.     

三维散射体宽带RCS频率响应的快速算法:渐进波形估计技术加速的区域分裂法

本文基于渐近波形估计(AWE)技术和区域分裂法(DDM)快速预测有限长三维柱体RCS的频率响应.首先采用区域分裂法结合频域有限差分(FDFD-DDM)计算柱体表面等效电流和磁流在某一给定频率展开的Taylor级数,然后通过Padè逼近将Taylor级数转化为有理函数,由此可获得柱体在任一频率入射波照射下的表面等效电流和磁流,进而计算出RCS频率响应特性.本文结果和文献结果吻合较好,证明了本文方法的正确性,另外相对于直接采用FDFD-DDM法而言,计算效率得到了显著的提高.     

一维FSS电磁散射宽带特性的快速计算

基于渐近波形估计（AWE）技术和矩量法（MOM），快速分析了一维频率选择表面（FSS）的宽带电磁散射特性，首先采用MOM法将平面波照射下FSS的电场积分方程（EFIE）转化为关于感应电流的矩阵方程，并由该方程确定频率导数矩阵方程（MEFD）；再在所考虑的频带内的某一给定频率处求解MEFD，得到给定频率处的频率导数感应电流；最后根据Pade逼近理论由给定频率处的频率导数感应电流确定周期性结构在任意频率入射波照射下的感应电流，根据FSS上的感应电流及谱域Floquet谐波模计算FSS的电磁散射宽带特性，计算结果表明，AWE能有效逼近MOM逐点扫描计算的结果，同时在计算速度上可加快十几倍。     

渐近波形估计技术用于介质柱宽角度RCS的计算

基于渐近波开估计（AWE）技术和矩量法（MOM）快速预测任意形状非均匀介质柱体的单站雷达散射截面RCS方向图,采用矩量法求解介质柱的电场积分方程,得到介质柱在某一给定方向入射波照射下的极化电流,然后利用AWE技术将任一角度入射波照射下的极化给定角度附近展开成Taylor级数,通过Pade逼近将Taylor级数转化为有理函数,由此可获得介质柱在任一角度入射波照射下的极化电流,进而计算出RCS方向图。计算结果表明AWE完全能逼近MOM精确计算的曲线,同时可加快计算速度。     

矩量法结合AWE技术分析阵列天线

从工程角度出发,应用AWE技术结合矩量法分析阵列天线的辐射特性。首先采用投量法求解阵列天线的电场积分方程,得到某一频率点的电流分布和输入阻抗;然后通过Pade逼近获得任意频率的导纳,从而得到阵列天线的频率响应;最后针对一六单元八木阵列天线进行分析,给出了天线上的电流分布、输入导纳以及辐射方向图,并对AWE/MOM与MOM的计算结果进行比较,两者比较接近,但AWE/MOM可大大加快计算速度。     

渐近波形估计技术在涂敷导体柱宽角度RCS快速计算中的应用

采用渐近波形估计技术 (AWE)和矩量法相结合的方法 ,计算了TM波入射下表面涂敷有耗介质的导体柱的宽角度单站RCS ,本方法首先采用矩量法求解由电磁场等效原理得到的介质层表面等效电磁流耦合方程 ,得到柱体在某一给定方向入射波照射下的电流和磁流密度 ,然后采用渐近波形估计技术将任意角度入射波照射下的电流和磁流密度在给定的角度附近按Taylor级数展开 ,通过Pad埁逼近将Ｔａｙｌｏｒ级数转化为有理函数 ,由此可以得到涂敷导体柱在任意角度TM波入射下的电流和磁流密度 ,进而可以得到柱体的宽角度RCS。此方法得到的结果与由MOM计算的结果完全吻合 ,而AWE的计算效率却提高了一个数量级。     

基于AWE技术的宽角度与宽频带RCS的快速计算

目标的雷达散射截面（RCS）与照射角度和照射频率都有关系,采用渐近波形估计（AWE）技术在角度域和频率域上预测任意形状的理想导体的单站RCS,通过Pade逼近求出给定角度域内任意角度及给定频带内任意频点的表面电流密度分布,进而计算出给定目标的散射场及雷达散射截面。对数值结果与矩量法逐点求解的结果进行了比较,两者吻合较好,而且提高了计算效率。     

AWE技术结合矩量法分析某型八木天线

应用AWE技术结合矩量法分析了某型八木天线的辐射特性。首先采用矩量法求解八木天线的电场积分方程，得到某一频率点的电流分布和输入阻抗；通过Pade逼近^[5]获得任意频率的导纳，从而得到该型八木天线的频率响应；给出了天线上的电流分布、输入导纳以及辐射方向图，对AWE／MOM与MOM的计算结果进行了比较，两者比较接近，但AWE／MOM可大大加快计算速度。     

带电磁带隙结构微带天线的时域溅射特性研究

在微带天线上加电磁带隙(Electromagnetic Band Gap,EBG)结构,能够有效减小天线工作频带内的雷达散射截面(Radar Cross Section,RCS),目标识别比较困难.利用时域散射波形特性,与频率RCS相结合,实现低RCS目标的测量.采用并行时域有限差分(Finite-Difference Time-Domain,FDTD)对带EBG结构的微带天线的时域溅射特性进行了研究,分析了其时域散射波形形成机理,研究了其双站时域散射特性以及频域RCS的变化规律.从而得出,带有EBG结构的天线虽然具有较低的频域RCS,"隐身"特性较好,但是其时域散射波形开始部分场值的幅度很大,需要经过一段时间场值稳定后才能呈现出低散射特性,本文把这种特性叫做时域溅射特性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.