组合脉冲激光铝等离子体的数值模拟研究

为了获得组合脉冲激光诱导等离子体光谱性能增强的物理机制, 基于FLASH程序模拟计算了预脉冲参数对组合脉冲激光诱导的铝等离子体参数时空分布的影响, 获得了在不同预脉冲波长和不同预主脉冲延时下产生的铝等离子体电子温度、电子密度和烧蚀质量的空间演化规律。结果表明, 在预主脉冲总能量相同的情况下, 随着预脉冲波长从0.266μm变化到1.064μm, 高温环境氦气等离子体羽辉的空间范围从0.7cm增大到3.0cm, 但组合脉冲对靶材的烧蚀效率严重下降, 而铝等离子体的最大电子温度保持稳定; 此外, 组合脉冲的时间延迟低于100ns。该研究可为组合脉冲激光诱导击穿等离子体光谱增强技术提供理论参考。     

双脉冲激光诱导铝等离子体的双波长干涉诊断

双脉冲激光诱导等离子体在激光加工、元素检测、材料去除等领域有广阔的应用前景和发展空间,对其进行诊断具有重要意义。针对延迟双脉冲激光诱导铝等离子体的作用效果和影响机理,采用双波长干涉法对其时间演化规律展开研究。基于马赫-曾德尔干涉仪搭建了双波长干涉诊断系统,得到了双脉冲激光诱导等离子体干涉图。通过对干涉图的处理和分析,得到了等离子体电子密度随双脉冲激光延迟时间的变化规律。结果表明,随着双脉冲激光延迟时间的增加,第二束脉冲激光对等离子体电子密度的增强效果先加强后减弱。其中,双脉冲激光延迟时间为10 ns时,对等离子体电子密度的增强效果最强,在30 ns时刻,其中心区域平均电子密度可达6.49×1019 cm?3,相较于同等能量单脉冲激光诱导等离子体提升了26%。同时研究了延迟时间对第二束脉冲激光作用机制的影响。研究结果为双脉冲激光诱导等离子体的优化方向提供了参考。     

调Q激光引诱固体表面击穿高速摄影研究

用光路延迟装置在同一台YAG激光器上研究了激光引诱固体表面击穿的瞬态物理过程,首次获得了该过程最初阶段(200ns以内)的冲击波和等离子体的时间序列分辨的阴影图和Mach-Zehnder干涉图。并计算了等离子体的折射率分布和冲击波前的电子密度。     

CO2激光诱导空气等离子体放电通道特性研究

为了研究高能脉冲CO₂激光诱导空气等离子体放电通道的特性,建立了高压电容充放电实验平台,激光束经离轴抛物聚焦镜汇聚,引发间距可调的盘状电极和针状电极之间的等离子体放电通道。利用电气参量测量、发射光谱测量等手段,分析了等离子体放电通道的启动特性、阻抗特性和等离子体密度。结果表明,激光束与放电方向同轴的结构以及较大的脉冲能量,使得激光诱导等离子体放电通道的启动时间大幅缩短,50mm间距的等离子体通道,启动时间约为2μs;激光诱导等离子体放电通道的阻抗很小,约1Ω~2Ω,并且阻抗值随放电电压的增加有减小的趋势,而与等离子体通道长度的关系不明显;由谱线的Stark展宽计算获得的空气击穿之后、放电启动之前的等离子体电子密度约为1019cm-3,尽管放电启动时等离子体辐射显著增强,但等离子体密度近乎单调下降。这些结果将有利于高能脉冲CO₂激光诱导空气等离子体放电通道的应用研究。     

激光诱导Co等离子体电子密度的时间空间演化特性

测定了激光烧蚀Co等离子体中Co原子389.408 nm发射谱线的时间空间分辨发射光谱.由发射光谱线的强度和斯塔克(Stark)展宽计算了等离子体电子密度,并由实验结果讨论了激光等离子体中电子密度的时间空间演化特性.实验结果表明,当延时在100～1000 ns变化时,等离子体中的电子密度变化范围为0.02×1017～0.73×1017 cm-3,在沿激光束方向上,当距离靶表面0～1.8 mm范围内变化时,相应的电子密度ne范围为0.3×1017～0.8×1017cm-3,等离子体电子密度在激光束方向上具有很好的对称性.     

激光诱导击穿空气等离子体参数的光谱分析法

空气等离子体的电子温度和密度对激光诱导空气击穿等离子体产生闪光过程的研究有着重要的意义,本文将纳秒Nd∶YAG脉冲激光(1064 nm)聚焦于大气中,诱导其产生等离子体闪光,并通过Avantes-ULS3648型9通道的光谱仪采集闪光光谱,通过光谱分析,研究了不同延迟时间下激光诱导击穿空气等离子体产生过程中的等离子体电子温度和电子密度的变化情况。根据同一元素不同峰值位发出的光谱,由相对强度比较法可以得出等离子体电子温度,由斯塔克展宽法可得到等离子体电子密度的变化,通过分析发现,等离子体电子温度和密度均随延迟时间的增大而下降。这些结果对研究强激光作用下空气击穿的气体动力理论机制有一定的科学意义。     

大气颗粒物中重金属的双脉冲激光诱导击穿光谱研究

为了对沈阳市某工业区附近大气中重金属等离子体光谱特性进行研究,采用双脉冲激光诱导击穿光谱技术（Double pulse laser induced breakdown spectroscopy,DP-LIBS）对样品中主要重金属等离子体光谱进行测量分析。通过比较单脉冲（SP）和双脉冲（DP）激发的样品等离子体光谱,发现采用DP-LIBS技术可以很好地增强等离子体光谱的强度。研究DP-LIBS光谱强度随两个脉冲激光的间隔时间变化,在脉冲间隔为15 s时样品中重金属等离子体光谱得到了最大的增强。同时DP-LIBS技术也会提高样品等离子体光谱的稳定性,谱线的相对标准偏差由6%降低为3%左右。最后对样品等离子体的电子温度及电子密度随双脉冲间隔时间的变化情况进行了研究。     

高真空激光等离子体的同步移相干涉诊断及仿真

为了解决在高真空环境下,等离子体膨胀迅速、外围羽流引起的条纹偏移小、单幅干涉条纹图难以检出的问题,采用同步移相干涉测试技术得到了1.333×10^-4 Pa和1.333×10^-3 Pa真空度下激光诱导铝等离子体电子密度分布;同时采用2维轴对称流体动力学模型,对高真空环境下激光诱导等离子体的膨胀过程进行了数值仿真,得到了电子密度的2维分布,并分析了数值仿真结果存在偏差的原因及改进方法。结果表明,等离子体的中心电子密度在50 ns时下降至1.4×10²⁰ cm^-3;数值仿真结果与实验结果吻合较好,验证了模型的正确性。该研究为高真空下激光等离子体的研究提供了一定的参考。     

缓冲气压对CO2激光Al靶等离子体参量的影响

为了研究缓冲气压对激光等离子体参量的影响,利用CO2,激光烧蚀A1靶产生等离子体,缓冲气压变化范围为10-4Pa～2103Pa,激光脉冲能量为180mJ/脉冲,在局域热平衡和光学薄等离子体假设下,采用发射光谱法计算了等离子体的电子温度和电子密度,并研究了缓冲气压对这些参量的影响。结果表明,等离子体的电子温度和电子密度分别在1.05eV～2.47eV与1.951016cm-3～10.5 1016cm-3范围内,Al等离子体的电子温度随气压的增大而减少;低缓冲气压时,电子密度随气压增大而减小,当气压达到600Pa时,激光脉冲会击穿空气形成等离子体,电子密度又开始上升,当气压超过3000Pa时,空气等离子体会屏蔽激光脉冲能量,使到达靶面的激光能量急剧下降,Al原子的特征谱线也随之减弱而几乎消失。这一结果对理解缓冲气压对激光与物质相互作用过程的影响是有帮助的。     

激光诱导Al等离子体中电子密度的实验研究

用Nd:YAG脉冲激光器产生的1.06μm激光,在低压环境下烧蚀金属Al靶获得等离子体,并观测其空间分辨发射光谱;利用AlⅠ的两条发射谱线的Stark展宽计算了Al等离子体电子密度,研究了电子密度随空间的演化规律。结果发现:在靶面附近电子密度达到最大值,随着离靶面距离的增加,电子密度逐渐减小,从微观物理机制的分析推断:激光诱导等离子体的复合辐射是电子密度减少的主要原因。另外,还探讨了激光能量的变化对等离子体电子密度的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.