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GaAs衬底层选择性腐蚀技术 总被引:2,自引:1,他引:1
本文在GaAsGaAlAs选择性腐蚀的基础上进行了腐蚀GaAs衬底层获得GaA/GaAlAs外延层薄膜的二次腐蚀技术。最终选用了C3H4(OH)(COOH)3.H2O-H2O2系选择性腐蚀液和H2SO4-H2O2系腐蚀液,获得了快速,可控制,重复性好的可全部可局部去除衬底的腐蚀方法。 相似文献
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Al0.85Ga0.15As/GaAs太阳能电池器件工艺优化研究 总被引:2,自引:0,他引:2
报道了优化的p-n型Al0.85Ga0.15As/GaAs太阳能电池器件工艺。分别采用真空蒸发Cr/Au和AuGeNi/Au制作下面栅线和背面电极,并分别在450℃和350℃下快速合金化形成欧姆接触。采用NH4OH:H2O2:H3PO4:H2O体系的选择性腐蚀液去除高掺杂的GaAs接触层。采用真空蒸发技术制备ZnS/MgF2双层复合减反射层。测试结果表明,采用优化工艺制备的器件的光电转换效率得到了 相似文献
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InP系列异质材料中的宽带隙夹层和它对材料特性的影响 总被引:1,自引:1,他引:0
InGaAs/InGaAsP/InP等异质材料在室温和低温下的光荧光测试中的工为3 ̄30nm宽带隙夹层峰。夹层的化学成分主要是InGaP,它与MOCVD生长时开关程序和PH2或AsH3气流空流时间及气体存储时间等上关,实验表明,对InP/InGaAsP/InP异质材料生长,AsH3气流空流时间为0.5秒左右时,宽带隙夹层峰基本消失,还指出宽带隙夹层将相引起较大的晶格失配,增另异质界面缺陷,从而使材 相似文献
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本文报道用低压有机金属化合物化学气相淀积(LP-MOCVD)外延生长InGaAsP/InP应变量子阶材料,材料参数与外延条件的关系,量子阱器件的结构设计及其器件应用.用所生长的材料研制出宽接触阈值电流密度小于400A/cm2(腔长400μm),DC-PBH结构阈值7~12mA的1.3μm量子阱激光器和宽接触阈值电流密度小于600A/cm2(腔长400μm),DC-PBH结构阈值9~15mA的1.55μm量子阶激光器以及高功率1.3μm量子阱发光二极管和InGaAsPIN光电探测器. 相似文献
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本文介绍了台湾用一塌信的光电器件近期的开发两头及研究成果。其中包括高性能1.55μm复耦合InGaAsP-InP分布反馈和1.3μm无致冷AlInGaAs-InP激光器,半绝缘衬底的InGaAs-InPp-i-n光探测器,0.98μmInGaAs-GsAs-InGaP泵浦激光器以及12信道的激光器和探测阵列。 相似文献
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孙再吉 《固体电子学研究与进展》1994,(3)
AlGaAs-InGaP/GaAs HBT,f_T高达245GHz《IEEDIJ》1993年第12期报道了一种新的HBT,采用AIGaAs-InGaP发射区结构。该结构在发射极形成一个电子发射器,产生速度过冲效应。它一方面增强了发射极输运,同时减少了?.. 相似文献
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用pH=7±O.05的H_2O_2-NH_4OH溶液,在5±1℃,对晶句是(100)的高阻或浓度为2×10~(13)cm~(-3)的n型GaAs衬底进行腐蚀试验.发现腐蚀速率不但与搅拌有关,且在最初半分钟左右或开始250~500(?)的GaAs腐蚀,其腐蚀速率比更长时问或更深腐蚀时要快得多.分析表明,NH_4OH向GaAs与溶体界面的扩散很可能是腐蚀过程的限制步骤.对腐蚀后的残余氧化层进行测试分析,认为化学腐蚀后在表面有一层极薄的氧化物层,接着是过渡层.用HCI或NH_4OH水溶液清洗则可去除氧化物层并缩小过渡层. 相似文献
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The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon(a-Si) hardmask is presented.SCI(NH_4OH:H_2O_2:H_2O),which can achieve reasonable etch rates for metal gates and very high selectivity to high-k dielectrics and hardmask materials,is chosen as the TaN etchant. Compared with the photoresist mask and the tetraethyl orthosilicate(TEOS) hardmask,the a-Si hardmask is a better choice to achieve selective removal of TaN on the HfSiON dielectric be... 相似文献
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GaAs/AlGaAs多层膜的陡直度较大程度地关系到其实际应用效果,但在实际加工中较难控制,因此有必要研究刻蚀过程中一些主要因素对其陡直度的影响。结合具体工作情况,用AZ1500光刻胶作为掩模,GaAs/Al0.15Ga0.85As多层膜为刻蚀材料,分别使用湿法和干法对其进行刻蚀。湿法刻蚀的刻蚀剂为H3PO4+H2O2溶液,干法刻蚀采用感应耦合等离子体(ICP)刻蚀法,等离子体由Cl2+BCl3(蒸汽)混合气体电离形成。通过控制变量方法,发现湿法刻蚀中刻蚀剂配比和温度以及干法刻蚀中BCl3(蒸汽)流量对刻蚀陡直度的影响规律。由此得出,提高H3PO4所占比例和降低刻蚀温度虽然会降低刻蚀速率,但可以提高多层膜的陡直度;ICP刻蚀的陡直度优于湿法刻蚀,BCl3(蒸汽)的流量在一定范围内对刻蚀陡直度的影响较小。 相似文献
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Ramanathan L.N. Mitchell D. 《Components and Packaging Technologies, IEEE Transactions on》2001,24(3):425-430
Shrinking die sizes and increasing I/O density is motivating the push toward flip chip packages. A flip chip interconnection system with a under bump metallurgy stack containing sputtered TiWNX/sputtered Cu/electroplated Cu stud/electroplated 95%Pb-5%Sn was developed. An important step in the above process is the selective etching of the sputtered Cu bus layer and the TiWNX barrier layer, in the presence of the Pb-Sn solder. The Cu bus layer was selectively etched using commercial etchants. However, no commercial etchants were available for selectively etching the TiWNX layer, H2O2-NH4OH based etching systems, popularly known as Standard Clean-1 cleaning solutions, have been extensively used to clean silicon wafers in front end wafer fabrication where only trace metal contamination exists. Since metals like lead, copper, titanium, tin and tungsten catalyze the heterogeneous decomposition of the peroxide, the unstable H2O2-NH4OH based etching systems are rarely used to etch metal films. In this paper the development of a H 2O2-NH4OH based etchant to selectively etch the sputtered TiWNX films in the presence of electroplated 95%Pb-5%Sn solder bumps is discussed. A 23 full factorial experiment with mid point was conducted to establish the etchant composition, as well as process temperature, that give satisfactory responses with respect to etch time, permissable undercut of the Cu stud (caused by the NH4OH), and acceptable bump shape after reflow. Statistical analysis was used to understand the significant factors influencing the etch rate and undercut. An etchant containing 6% by volume of 30%-H2O2 and 0.75% by volume of 30%-NH4OH operated at a temperature of 37°C was found to give satisfactory results 相似文献
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Si raised strip waveguides on SiO/sub 2/ have been proposed and fabricated, which are based on silicon-on-insulator (SOI) material. In the waveguides, the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. An anisotropic etchant is used to produce the trapezoidal Si raised strip waveguides by etching the Si film down to the SiO/sub 2/ etch-stop buried layer. The transmission losses of the Si waveguides are measured to be less than 0.2 dB/cm at the 1.3 /spl mu/m wavelength for the lowest mode TE-like mode. 相似文献
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Focused ion beam was used to fabricate 2 mm-long, 4 μm-wide and 4 μm-deep multimode trench waveguides in InP/InGaAsP. An automated stitching method was developed to fabricate mm-long structures using alignment marks. The waveguides were sputtered or etched using I2 at room temperature and 150 °C stage temperature. The propagation losses induced by the different fabrication techniques were measured and ranged between 50 and 82 dB/cm. A damaged layer with implanted Ga and the sidewall roughness are identified to be the most important causes for the losses. FIB is shown to be a single-step fabrication technique for rapid-prototyping of photonic structures in InP/InGaAsP. 相似文献
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新型长波长InP基谐振腔增强型光探测器 总被引:4,自引:1,他引:3
介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59%的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。 相似文献
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Chu D.Y. Chin M.K. Sauer N.J. Xu Z. Chang T.Y. Ho S.T. 《Photonics Technology Letters, IEEE》1993,5(12):1353-1355
Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 μm in diameter lased with single mode at 1.5-μm wavelength when optically pumped by a pulsed argon-ion laser at 80 K 相似文献