基于高光谱的苹果树冠层磷素状况估测模型研究

利用高光谱技术估测了苹果树冠层的磷素含量。先用ASD Field Spec3型地物光谱仪测定了春梢停止生长期苹果树冠层的高光谱反射率,并对光谱数据进行了多种变换处理。然后对其与磷素含量进行了相关分析,找出了与磷素相关性较显著的光谱参量,并通过逐步回归分析建立了磷素估测模型。结果表明,近红外波段是苹果树冠层磷素的敏感波段;808 nm、921 nm、1195 nm、1272 nm及其组合的归一化红外光谱指数与苹果树冠层磷素高度相关。在构建的估测模型中,以808 nm、921 nm、1195nm、1272 nm及其组合的归一化红外光谱指数为自变量构建的高光谱估测模型的估测效果最佳。该研究实现了苹果树冠层磷素含量的快速估测,同时也为苹果的实时营养诊断提供了理论依据。     

基于光谱变换定量估算苹果叶片的等效水厚度

运用高光谱技术快速无损地估算了苹果叶片的等效水厚度(Equivalent Water Thickness, EWT),为苹果树的长势及干旱预警提供参考。以山东省烟台栖霞市红富士苹果树叶片为试验材料,在测定苹果叶片的光谱反射率和计算叶片EWT的基础上,分析了苹果叶片的EWT、原始光谱的反射率及其13种变换光谱反射率之间的相关性。筛选敏感波长后,建立了苹果叶片EWT的支持向量机定量的估算模型。13种光谱变换中,一阶导数(the First Derivative, FDR)、平方根的一阶导数(the First Derivative of the Square Root, FD(SqrtR))及倒数的对数的一阶导数(the First Derivative of the Logarithm of the Reciprocal, FD[Lg(1/R)])三种变换的相关性较好。确定了估测苹果叶片EWT的敏感波长。基于支持向量机回归分析方法,建立了定量估算叶片EWT的模型,验证集的决定系数R2达到了0.8147,相对分析误差(Relative Percent Deviation, RPD)达到了2.2671。结果表明,该模型具有较高的估测能力,支持向量机回归方法比较适于估算苹果叶片的EWT。该方法为利用高光谱技术定量估算苹果的生长状况提供了技术支撑。     

基于傅里叶变换红外光谱和siPLS-GA-PLS的水稻叶片氮素含量预测研究

傅里叶变换中红外光谱谱区宽,搜索空间大,需要采用高效率和高质量的算法进行波长选择.敏感波段及其组合的选择是简化分析模型和提高模型预测精度的关键技术之一.本研究以水稻孕穗期叶片干样的中红外光谱透射率和叶片氮素含量为数据源,通过协同偏最小二乘算法(siPLS)从宽谱区中初选出波段范围1583.3~992.2cm-1,再采用迭代遗传算法(GA)从中选出了84个水稻叶片氮素含量预测的敏感波段.研究结果显示以此敏感波段建立的偏最小二乘回归模型的预测均方根误差(RMSEP)和水稻叶片总氮含量的测量值与预测值之间的相关系数分别为0.1186和0.9120,该预测结果明显优于协同偏最小二乘法(siPLS)和光谱指数NFSA的预测结果,说明傅里叶变换红外光谱技术结合siPLS-GA-PLS算法能够实现水稻叶片氮素含量的预测.     

基于红边位置的木荷叶片叶绿素含量估测模型研究

利用红边参数反演作物参数是定量遥感研究的一个热点, 红边参数中红边位置与作物生化组分强相关, 为监测作物胁迫提供了一个非常敏感的指标。准确估测植被叶绿素含量,对于研究森林健康和胁迫、森林生产力的估计, 碳循环的研究有着重要的意义。介绍几种红边位置算法, 并对这些算法及其应用进行了比较,通过选取红边位置的不同敏感波段来估测植被叶片叶绿素含量。经室内光谱获取叶片的光谱数据,采用一阶光谱导数法、平滑处理后一阶光谱导数法、线性四点内插法、五次多项式拟合法四种算法处理光谱数据,获得红边位置变量,并与叶绿素含量进行拟合,构建估测木荷叶片叶绿素含量的回归模型。结果表明:各种算法获取的红边位置变量所构建的回归模型估测叶绿素含量是可行的;五次多项式拟合法估算精度是最高的,其获取红边位置计算相对复杂;线性四点内插法估算精度次之,但计算较简便。     

基于吸光度的波长筛选方法用于近红外光谱定量模型的优化

建立一种基于吸光度的波长筛选方法,以近红外光谱测定中成药制剂的多糖含量为例,对模型优化效果进行验证.考虑模型稳定性,在计算机平台上搭建一种新的样本集划分框架,基于吸光度筛选出最优波段为400~1882&2072~2364 nm,建立偏最小二乘(PLS)模型得到的SEPAve、RP,Ave分别为27.13 mg L-1、0.856,与全扫描谱区(400~2498 nm)的PLS模型预测效果做比较.结果表明,基于吸光度的波长筛选方法,可以优选出高信噪比波长,从而提高了近红外光谱定量模型的性能.     

基于场景的热红外高光谱数据光谱定标

传感器每个波段的中心波长和半高全宽（Full Width at Half Maximum，FWHM）随成像环境变化会发生较大的系统性漂移。这种漂移最终会影响发射率和温度的反演精度，尤其是在大气吸收波段附近的发射率反演精度。选择水汽在11.73 m处的吸收通道作为参考波段，提出了适用于热红外高光谱数据的光谱定标技术流程。模拟实验表明:光谱分辨率为50 nm，中心波长偏移在-50~50 nm、FWHM变化在-25~25 nm时，大气水汽含量对光谱定标误差的影响最大。同时，对误差分布曲面进行拟合得到描述误差分布模型，用于误差的估计。当大气水汽含量足够大时，光谱中心波长偏移估算误差可达到1 nm以内。最后，将所提方法应用于机载热红外高光谱数据光谱定标。结果显示，热红外高光谱成像仪中心波长偏移为28.4 nm，FWHM变化为-18.5 nm。     

溶胶-凝胶提拉法制备Mg_xNi_(1-x)O薄膜与表征

利用溶胶凝胶提拉法在石英玻璃衬底上制备出吸收边波长位于地球表面太阳光谱日盲区(240～280nm)内的MgxNi1-xO薄膜.XPS和XRD结果显示,MgxNi1-xO在1000℃下形成具有立方结构的固溶体;紫外可见吸收谱结果表明,MgxNi1-xO吸收边随着Mg含量的变化而发生改变,当Mg含量x在0.2～0.3之间时,薄膜的吸收边波长在248～276nm范围内可调;光电响应测试结果表明,MgxNi1-xO薄膜(x=0.3)对太阳光不敏感,而对波长为254nm的紫外光具有很好的光电导特性,光照前后薄膜电阻变化率达40%,因此,我们可以认为MgxNi1-xO(x=0.2～0.3)薄膜材料有望应用于日盲区的紫外探测.     

基于近红外高光谱成像技术的长枣含水量无损检测

利用近红外(NIR)高光谱(900~1 700nm)成像技术对灵武长枣含水量的无损检测进行了研究。通过900~1 700nm高光谱成像系统采集了128个长枣图像,对原始光谱与Savitzky-Golay平滑处理后的光谱反射率R曲线、吸收率A曲线和Kubelka-Munk函数(KM)等曲线的偏最小二乘回归(PLSR)模型进行对比分析;采用PLSR的加权β系数分别提取不同光谱参数下的特征波长,建立RPLSR、A-PLSR和KM-PLSR的长枣含水量预测模型。结果表明,采用原始光谱建立的PLSR模型优于Savitzky-Golay平滑的PLSR模型;原始光谱的特征波长建立的PLSR模型优于全波段的PLSR模型,特征波长建立的KM-PLSR模型优于R-PLSR、A-PLSR模型,决定系数(R2)和预测均方根误差(RMSEP)分别为0.793、1.828。这表明,NIR高光谱成像技术提取特征波长进行长枣水分检测是可行的,同时也为今后长枣品质在线检测提供了理论依据。     

溶胶-凝胶提拉法制备Mgx Ni1-xO薄膜与表征

利用溶胶-凝胶提拉法在石英玻璃衬底上制备出吸收边波长位于地球表面太阳光谱日盲区(240～280nm)内的MgxNi1-xO薄膜.XPS和XRD结果显示,MgxNi1-xO在1000℃下形成具有立方结构的固溶体;紫外-可见吸收谱结果表明,MgxN1-xO吸收边随着Mg含量的变化而发生改变,当Mg含量x在0.2～0.3之间时,薄膜的吸收边波长在248～276nm范围内可调;光电响应测试结果表明,MgxNi1-xO薄膜(x=0.3)对太阳光不敏感,而对波长为254nm的紫外光具有很好的光电导特性,光照前后薄膜电阻变化率达40%,因此,我们可以认为MgxNi1-xO(x=0.2～0.3)薄膜材料有望应用于日盲区的紫外探测.     

玉米粗纤维含量高光谱估算模型研究

以不同品种玉米叶片、茎、穗和叶鞘的室内光谱反射率及对应的粗纤维含量为数据源,通过相关性分析发现原始光谱以及一阶导数光谱粗纤维含量光谱诊断的敏感波段分别位于近红外波段的1924nm和2370nm;线性与非线性拟合分析表明以2370nm处的一阶导数光谱所构建的线性模型相对其它模型最优,模型RMSE=3.538,由此模型得到的粗纤维含量理论值与实测值之间极显著相关,相关系数r=0.693.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.