半导体激光束的准直技术

利用新颖的光纤技术,使半导体激光束发散角大(垂直方向发散角为40°、水平方向为10°)得到了很大改善;其成本低、简单可靠,可以达到发散角小于0.05°的水平。     

基于介电润湿液体棱镜阵列的光束调整器

为实现在三维空间上对不同光束(平行光、会聚光 、发散光)的调整,提出了一种基于介电润湿液体棱镜阵列的光束调整器。根据几何光学、 矩阵光学和介电润湿理论,推导出光学传递函数,分析了该光束调整 器的控光能力,讨论了工作电压对光束调整器调控性能的影响,并通过仿真模型的验证。结 果表明,该光束调 整器可以实现平行光的扩束、缩束、平移、会聚和发散;还可对发散光进行光束调整,改变 出射光的发散角度、 使其变成会聚光或平行光;同时,该光束调整器还可以实现对会聚光进行调节的作用,出射 光可以为会聚光、 平行光或发散光。当直径为5mm的平行光经光束调整器,其直径变化范围为3.08 mm,可左右平移 0~0.92 mm,其焦距f可在7.96 mm~∞(双层液 体界面为双凸形)范围内或在－∞~－25.99 mm(双层界面为双凹 形)范围内调节;对于发散角为20°的发散光,经过该光束调整器, 当出射光为发散光时,其发散角的变化范 围为0°~45.7°,当出射光为会聚光时,其会聚角的变化范围为0°~14.48°;对于会聚角为20°的会聚光,当出 射光为会聚光时,其会聚角的变化范围为0°~49.88°,而当出射光 为发散光时,其发散角的变化范围为0°~16.02°。     

基于双光斑外缘曲线的高能面阵LD发散角测量方法

提出一种适合高能面阵LD发散角测试的新方法.该方法以激光光束传输到不同距离处的2条光斑外缘曲线的几何特征为基础来求LD的发散角,而2条光斑外缘曲线分别由2个半径不同的半圆环探头的旋转扫描探测获得.该方法解决了高能面阵LD发散角测试中的2个关键问题:一是现有测试方法中把面阵LD的面发光直接当作点光源引起的测试误差;二是避免了因LD功率过大而损坏和烧毁探测器.实验表明:该测试方法能够准确、可靠地测试高能面阵LD的发散角.     

LD抽运Nd:YAG/KTP腔内倍频连续波1.2 W红光激光器

报道了用Ⅱ类相位匹配KTP(相位匹配角选为θ＝59.9°,Φ＝0°)对激光二极管(LD)侧向抽运的NdYAG腔内倍频的红光激光器.通过分析大功率抽运NdYAG棒热透镜效应的影响,优化设计了三镜折叠腔参数.采用镜片镀膜的方法使NdYAG工作在1319nm波长,经腔内倍频获得单一波长659.5nm的红光激光.在抽运电流13A和输出镜曲率半径为200mm时,达到1.2W的红光连续波输出.     

KTP光学参量振荡器输出激光的空间模式和光束质量

理论上通过二维傅里叶变换求解耦合波方程 ,分析了KTP光学参量振荡器 (OPO)信号光的空间分布 ;实验上利用Nd∶YAG倍频激光 ( 5 3 2nm)抽运非临界 (θ =90°,φ=0°) 及临界相位匹配KTP (θ =62 7°,φ=0°) OPO ,测量了参量光的空间分布、远场发散角及M2 因子等参数 ,讨论了抽运功率、谐振腔长、残余光后向二次抽运对OPO参量光的发散角和光束质量因子M2 的影响。     

小发散角量子阱激光器研究

使用三层平板波导理论分析了半导体量子阱激光器远场分布。针对大功率激光器讨论了极窄和模式扩展波导结构方法减小垂直方向远场发散角,得到了极窄波导结构量子阱激光器远场分布的简化模型,获得了垂直发散角的理论值,垂直方向远场发散角减小为28.6°;使用传输矩阵方法模拟了模式扩展波导结构量子阱激光器的近场光斑及远场分布,垂直方向远场发散角减小为16°。实验测试了极窄和模式扩展波导结构量子阱激光器的垂直发散角,理论结果与实验测试获得的发散角基本一致,实现了降低发散角的要求,获得了小发散角量子阱激光器。     

9.0μm锥形量子级联激光器

本文报道了波长为9.0μm的锥形量子级联激光器。与普通的脊形量子级联激光器相比,锥形量子级联激光器的水平远场发散角更小。系统的研究了锥形角度对脊形区宽度约为11μm的锥形量子级联激光器器件性能的影响,结果表明3°的锥形角是一个优化的角度,锥形角为3°时量子级联激光器具有较高的功率和仅为7.1°的水平远场发散角。     

窄发散角量子阱激光器的结构设计与分析

本文对ＧａＡｓ／ＡｌＧａＡｓ量子阱结构激光器中重要的结构参数与远场垂直发散角的关系作了系统的理论计算与分析，提出了实现２０°～３０°垂直发散角的有效途径，并同时研究了对激光器的光功率限制因子、阈值电流密度等重要参数的影响．     

小发散角高功率半导体激光器研究

在量子阱半导体激光器中,量子尺寸引起的衍射效应使半导体激光器的光束质量很差。分别限制结构的垂直结平面发散角在40°左右,使得光束整形系统比较复杂,限制了半导体激光器的直接应用。为解决这一问题,提出了降低垂直结平面发散角的要求。回顾了小发散角半导体激光器的技术发展及应用,对具有小发散角的模式扩展波导结构进行了理论模拟和实验验证,获得了优化的结构。采用MOCVD外延技术生长了外延片,制作了高峰值功率脉冲激光器,获得了快轴发散角小于25,°峰值功率大于80W的半导体激光器,在激光引信应用中获得良好效果。     

科技简讯

恩耐激光推出高亮度975nm单管半导体激光器世界领先的高功率半导体激光器制造商恩耐激光公司(nLightPhotonics Corp.)最近推出高亮度5W连续波975nm单管半导体激光器,采用标准的C-M ount和H H L封装。该半导体激光器是掺铒和掺钇光纤激光器和光纤放大器的理想泵浦源。此外,它也广泛应用于医疗和工业领域。发光区域宽度为200μm的5W975nm半导体激光器,工作电流为5.5A,工作电压为1.7V,快轴发散角(FW H M)小于38°和慢轴发散角(FW H M)小于10°。该公司能同时提供快轴准直透镜,其透过率高于95%,准直后的发散角(FW H M)小于2°。恩耐激…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.