基于FAN7527B的LED电源设计

文中分析并设计了一种单级功率因数校正LED驱动电源。该电源采用反激式拓扑实现了功率因数校正和对LED灯的恒流驱动。与普通反激式电源相比,该电源采用单级反激式PFC结构简化了电路结构,具有更高的功率因数和效率。文中对电路工作原理做了详细的说明,给出了变压器的设计方法。实验结果表明,该电源功率因数高、损耗小、输出稳定,可以高效率驱动LED灯。     

单级PFC LED驱动电源的研究与设计

论述了单级功率因数校正(PFC)LED驱动电源的设计思想,分析了单级PFC恒压源AC/DC构建原理,给出了单级PFC恒压源产生相关问题的解决办法,重点设计了恒流源部分,给出了恒流驱动芯片BP2808工作原理和设计步骤,同时,设计了手动调光部分,运用自激多谐振荡器NE555产生固定频率且占空比为0.09%相似文献   

单级PFC反激电源的设计与优化

针对目前LED驱动电源功率因数不高和效率低等问题,设计了一款高功率因数高效率的反激式LED驱动电源。阐述了单级PFC的基本原理,并给出了PFC的优化设计方法。分析了电源的整体效率和电磁干扰的来源,提出了提高效率的方法和抑制电磁干扰的途径。实验测试结果表明,该驱动电源具有高功率因数、高效率的特点;同时符合EMC测试标准。     

无大电解电容的大功率LED驱动电源的设计

为了提高LED驱动电源的寿命,必须去掉大电解电容。基于PFC(功率因数校正)芯片L6561,设计了一种采用反激式变换器构成的无大电解电容的大功率LED驱动电源,取消了传统电源中的PFC电路,去掉了限制电源寿命的大电解电容,大大简化了电路,在提高工作效率及可靠性的同时,降低了生产成本。测试结果表明,系统在输入电压变化时,可实现恒流恒压输出。     

高品质LED照明驱动电路优化设计

随着LED器件的技术发展,LED照明在家居照明中逐渐得到广泛应用,LED需要恒流电源驱动,恒流电源驱动设计已经成为一项关键技术。文中阐述了一种改良的单端反激电路,通过PFC和Flyback一体化的拓扑结构,配以DC/DC转换器设计,结果使得LED照明灯具的输入电流总谐波含量为16.1%,亮度波动为3%,提升了LED照明灯具的光学品质。     

临界导通模式Boost功率因素校正变换器电感的设计

介绍了脉动输入电压下Boost PFC变换器电感的设计方法,推导了临界导通模式电感的数学式。用NCP1608芯片设计了一款LED路灯电源的Boost PFC变换器。实验表明,在100V~240V交流输入电压范围内,PFC变换器效率大于96%,功率因数大于0.96,证实了电感数学式的正确性。     

恒流源系统中基于临界导通模式的APFC电路设计

将PFC应用于大功率LED恒流驱动系统可以减小谐波干扰,提高电网质量并有助于设备安全运行。用L6561设计基于临界导通模式的有源功率因数校正电路,采用Boost拓扑,有效提高了功率因素,减小了谐波畸变,提升了恒流源系统品质。     

高效单级变换式LED驱动电源设计

无论民用或商用领域,功率100 W以下的交流电源都有着巨大的应用需求。由于要兼顾输入谐波电流、功率因数、系统能效等问题,采用临界模式（boundary mode）的AC/DC单级反激式的电源拓扑成为非常完美的小功率直流电源解决方案。它具有高的转换效率,在高端小电源供应器中的应用越来越广泛,特别是在LED照明驱动方面极具优势。文章主要阐释小功率（≤100 W）单级AC/DC转换器的原理,分析其正弦调制原理及获得高功率因数、高能效的原因,并探讨了转换器的功能和优点,最后设计了一个采用仙童FAN6961芯片控制的48 V输出75 W的LED驱动电源,实验验证和批量生产证明本方案设计合理、产品性能稳定、可靠性好,能够有效提高能效、功率因数,避免建筑物内高次谐波电流造成的电源环境污染。     

一种新型原边反馈反激式数字控制LED驱动电源设计

设计了一种采用新型数字控制方法的原边反馈反激式LED恒流驱动电源。该电源电路运用拐点检测法测量副边电路放电时间,运用增量式PID算法调节恒流和功率因数,实现对电路的精确恒流控制和保持较高的功率因数。通过分析其控制原理,给出设计流程,最终基于FPGA实现控制,进行了样机设计和算法验证。实验结果表明所提出电路全工作范围内恒流精度达到6%,功率因数高于0.97,整机效率超过80%。本电路结构简单,控制精度高,具有较高的实用价值。     

单级PFC反激式LED照明电源控制器NCL30000

能源之星固态照明规范对任何功率等级的离线式LED照明电源都有功率因数要求,其中住宅应用要求PF0.7,商业应用要求PF0.9.目前利用电网供电的LED照明电源大多采用开关型反激式拓扑结构.为获得高功率因数,通常要在反激式转换器前端设置一级功率因数校正DC/DC升压变换器,形成两级架构,如图1所示.带PFC的反激式两段式...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.