基于单片机的蔬菜大棚监控系统设计

设计了一个基于AT89S52单片机控制的蔬菜大棚监控系统,可实现红外防盗报警、温湿度测量和LCD显示功能。系统主要包括单片机最小系统、红外热释电传感器、温湿度传感器、液晶显示电路和声光报警电路。该设计简单实用,抗干扰能力强、灵敏度高、安全可靠,具有较高的实用价值。     

基于单片机的LCD电子时钟的设计

本设计采用AT89S52单片机为核心,构成单片机控制电路,阐述了系统工作原理,给出了软件流程。AT89S52是一种8位Flash单片机。该器件采用ATMEL非易失存储器制造技术制造,与工业标准的80C51和80C52指令集和输出管脚相兼容。结合DS1302时钟芯片和Flash存储器,完成时间的自动调整和掉电保护。年、月、日以及星期、时、分、秒全部信息用液晶显示。通过按键的组合可以实现时间日期的调整以及时间温度的语音播报。     

基于AT89S52单片机的舵机控制系统设计

文中设计了一种基于AT89S52单片机的舵机控制系统,单片机通过定时中断产生脉宽调制信号(PWM)来控制Futaba-S3003舵机转动。文中给出了系统的电路原理图和程序设计思路。     

基于AT89S52与PIC16F877A的在线编程控制系统的设计

AT89S5X系列单片机是目前使用最为广泛的8位单片机。主要对AT89S5X系列单片机在线编程的原理与应用进行了分析介绍。并利用AT89S52与PIC16F877A的在线编程功能,以AT89S52作为主处理器,PIC16F87X作为从处理器,设计一种PWM占空比可调闭环反馈控制器,可使控制精度大为提高。     

基于51型单片机的自动巡线轮式机器人控制系统设计

设计了一种自动巡线轮式行走机器人控制系统,采用AT89S52型单片机作为主控CPU,外加一个复杂可编程逻辑器件(CPLD)协助CPU处理数据,扩展了程序参数存储器,能够进行检测引导线和直流电机、舵机的PWM控制.     

基于AT89S52的消毒柜控制系统设计

基于AT89S52单片机消毒柜控制系统的设计,是以低功耗、高性能CMOS 8位微处理器AT89S52为核心,借助实用的C语言,形成功能完善的控制软件,从技术应用层面上解决了消毒柜的消毒、加热、照明以及LED数码动态扫描显示和蜂鸣器鸣叫等控制功能。给出了硬件的完整电路和软件的编写流程,便于实际应用。     

中文图形12864点阵液晶显示模块与51单片机的并行接口电路及C51程序设计

讨论如何利用软件控制LM3033B-0BR3液晶显示模块时序,采用C51语言编程,驱动液晶模块实现并行传输方式的字符、汉字以及图形显示。具体阐述了LM3033B-0BR3液晶显示模块与单片机AT89S52的并行接口电路和软件编程方法。     

AT89S52与LCD驱动S6B0724的应用

在介绍单片机AT89S52和LCD驱动芯片S6B0724各自的性能特点基础之上,分别从硬件电路设计、软件设计两个方面,详细阐述了将二者结合应用于某产品的开发实例,用以实现操作菜单的液晶显示,提供良好的人机交换界面,并给出了详细的电路圈,及部分重要软件代码。最后以硬件仿真器进行了实验,验证了整个开发设计方案的可行性,为微控制系统中的液晶显示开发提供了借鉴。     

AT89S52与LED驱动S680724的应用

在介绍单片机AT89S52和LCD驱动芯片S680724各自的性能特点基础之上,分别从硬件电路设计,软件设计两个方面,详细阐述了将二者结合应用于某产品的开发实例,用以实现操作菜单的液晶显示,提供良好的人机交换界面,并给出了详细的电路图,及部分重要软件代码.最后以硬件仿真器进行了实验,验证了整个开发设计方案的可行性,为微控制系统中的液晶显示开发提供了借鉴.     

基于单片机的温度控制系统设计

本设计以AT89C52单片机为控制核心,进行温度采集,信息显示和执行器控制.AT89C52是SST在美国推出的高度可靠的小扇区FLASH微控制器.具有72KB的超级闪存和1KB的RAM.RAM的进一步扩展可以满足嵌入式系统的操作系统操作条件.通过使用AT89C52单片机和新型测温装置设计多点温度控制加热控制系统,并根据...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.