中子探测用含6Li玻璃闪烁材料最新进展

自上世纪50年代第一代玻璃闪烁材料开发以来, 玻璃闪烁材料在核物理、高能物理、工业探测(中子能谱测量、中子射线照相术及极端环境下α、β与γ射线的探测等)等领域发挥着越来越难以替代的作用. 中子探测用玻璃闪烁材料的研究集中于镧系离子(Ce³⁺、Tb³⁺、Pr³⁺等)掺杂含6Li、10B等中子吸收截面较大核素的硅酸盐、磷酸盐、铝酸盐上. 本文由中子探测用玻璃闪烁材料的性能特点、发展历程与发光机理出发, 重点关注了含⁶Li硅酸盐玻璃、磷酸盐玻璃、氟氧玻璃及其它玻璃闪烁材料的制备方法、光学性能、荧光衰减时间及中子探测效率等性能研究, 并对玻璃闪烁材料的发展趋势及未来应用方向作出了展望.     

Optical properties of rare earth ion (Nd, Er and Tb)-doped alumina films prepared by the sol–gel method

Rare earth ion (Nd³⁺, Er³⁺ and Tb³⁺)-doped alumina films were prepared by the sol–gel method using aqueous alumina sol. The effects of dopant concentration and treatment temperature on the optical properties, absorption and emission were examined for the doped films. Alumina films prepared by this method gave a high dopant concentration (0–15 mol% per alumina). Significant concentration quenching did not occur in this concentration range. The emissions from ⁵D₃ and ⁵D₄ of Tb³⁺-doped film reflected sensitively a matrix environment around Tb³⁺ ions. Er³⁺- and Nd³⁺-doped alumina films resonantly excited by cw Ti–sapphire laser (800 nm) showed upconversion emission at room temperature. The former gave 548 nm (⁴S_3/2→⁴I_15/2) and 640 nm (⁴F_9/2→⁴I_11/2) signals, and the latter 640 nm (⁴G_7/2→⁴I_11/2), which were dependent on alumina.     

掺铈多组分硅酸盐玻璃电子辐照着色研究

采用吸收光谱、电子顺磁共振谱和光致发光谱对掺Ce多组分硅酸盐玻璃K509在10 MeV电子辐照下的色心动力学进行了研究。结果表明, 电子辐照引起K509玻璃可见光透过率降低的色心类型为非桥氧空穴色心HC1和HC2。在剂量率一定的情况下, 色心浓度随总剂量的增大呈指数函数增大; 在总剂量一定的情况下, 色心浓度随剂量率增大呈指数函数减小。Ce³⁺荧光强度的变化表明辐照过程中Ce³⁺浓度与辐照总剂量负相关, 与辐照剂量率正相关, 验证了掺Ce玻璃耐辐照机理: Ce³⁺吸收辐照产生的空穴从而抑制空穴色心HC1和HC2的形成, 且不引入额外的可见光波段吸收。通过对Ce³⁺宽带荧光峰进行高斯拟合, 得到了K509中Ce³⁺能级结构图。     

Yb3+,Tb3+共掺杂Sr2B2O5荧光粉的制备及其下转换发光性能的研究

采用高温固相法合成了Tb³⁺, Yb³⁺共掺杂的Sr₂B₂O₅荧光粉。通过X射线衍射(XRD)和荧光光谱(PL)对样品的物相结构和发光性质进行了表征。XRD结果表明, 合成样品为单斜结构的Sr₂B₂O₅相。分别使用543 nm和980 nm的监测波长, 得到的激发光谱均在354 nm、374 nm处有较强的激发峰, 其中374 nm处最强, 说明Sr₂B₂O₅荧光材料在近紫外光区对太阳光有很强的吸收; 在374 nm( Tb³⁺:⁷F₆→⁵D₃) 紫外光激发下, 观察到Tb³⁺: ⁵D₄→⁷F_J ( J = 6, 5, 4, 3) 可见光区发射光, 并检测到Yb³⁺: ²F_5/2→²F_7/2的近红外发射光。通过研究激发光谱和发射光谱与Yb³⁺掺杂浓度的关系, 发现在单斜晶体Sr₂B₂O₅中, Yb³⁺具有很高的猝灭浓度。     

Effect of radiation trapping on the emission properties of Er: I13/2 → I15/2 transition in oxide glasses

The effect of radiation trapping on the emission properties of Er³⁺-doped tellurite and phosphate glasses has been investigated as the function of sample thickness and doping concentration. It was found that radiation trapping exists generally in two glass matrices, even at low doping concentration (0.1 mol% Er₂O₃). The larger effect of radiation trapping in tellurite glasses compared with phosphate glasses is due to its larger emission cross-section at 1.5 μm band and the spectral overlap between the emission and absorption spectra of Er³⁺: ⁴I_13/2 ↔ ⁴I_15/2transition. Due to radiation trapping, the measured lifetime of the Er³⁺: ⁴I_13/2 level in tellurite glasses increases by about 11–37% with increasing the sample thickness at the different erbium doping concentration, while 6–17% for phosphate glasses. And the full-width at half maximum of fluorescence (FWHM) of Er³⁺: ⁴I_13/2 → ⁴I_15/2 transition in tellurite glasses increased by about 15–64% with increasing the sample thickness, while 11–55% for phosphate glasses. It caused a high overestimation on the figure of merits (FOM) for amplifier bandwidth (σ_e × FWHM).     

Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

采用碳热还原氮化法合成了Eu²⁺/Tb³⁺掺杂的Sr₂Si₅N₈基荧光粉, 并重点研究了Tb³⁺-Eu²⁺共掺时Sr₂Si₅N₈基荧光粉的发光性能。研究结果表明: 由于Tb³⁺的f → d间的跃迁是自旋允许的, Sr₂Si₅N₈:Tb³⁺在330 nm激发光下, 在490、543、585和623 nm四处各有一发射峰, 它们分别来源于Tb³⁺的⁵D₄ → ⁷F_j (j = 6、5、4、3)能级跃迁; 掺入Tb³⁺对Sr_1.96Si₅N₈:0.04Eu²⁺的激发谱和发射谱的形状及峰位无明显影响, 当共掺离子Tb³⁺浓度为x = 0.01时, 样品发射强度比未共掺的Sr_1.96Si₅N₈:0.04Eu²⁺提高了约20%, Tb³⁺主要通过电多极能量传递的方式转向Eu²⁺。     

Ag-SiO2-CeF3：Tb3+复合纳米粒子的制备与发光性质

采用简单的液相法在室温下制备了均匀球形的Ag-SiO₂-CeF₃：Tb³⁺核-壳结构纳米复合发光粒子,并对其结构和性能进行了表征。测试结果表明：Ag-SiO₂表面包覆上了结晶良好的六方晶系的CeF₃：Tb³⁺。Ag-SiO₂-CeF₃：Tb³⁺纳米复合粒子为球形,尺寸约为45~60 nm,该纳米复合粒子与CeF₃：Tb³⁺一样具有良好的特征绿光发射,均以544 nm附近的Tb³⁺的⁵D₄→⁷F₅跃迁为最强发射峰,内核贵金属Ag纳米粒子对CeF₃：Tb³⁺发光起到了一定的猝灭作用。Ag-SiO₂-CeF₃：Tb³⁺复合材料在生物检测、疾病治疗方面具有潜在的应用。     

On the formation of radiation-induced defects in fluoroaluminate glasses

The spectra of electron paramagnetic resonance (EPR) of fluoroaluminate glass (FAG-36) based on mineral usovite Ba₂CaMgAlF₁₄ were studied. The paramagnetic centers responsible for EPR signals were induced by ion bombardment of the substrates prepared from this glass. The N⁺, O⁺, Ar⁺ and Pb + ions with energy E = 150 keV were used. The integrated dose D was 2 × 10¹⁶ ions/cm². It is shown by means of isochronal anneal experiments and computer simulation of the EPR spectra that they contain four components: broad Gaussian line (GL) with g = 2.016 and σ oscillating in the range 30–40; two anisotropic spectra with g_z = 2.016, g_y = 2.009; g_x = 2.001 (FA₁) and g_z = 2.045; g_y = 2.010; g_x = 1.98 (FA₂) as well as narrow isotropic line of Lorentzian shape with g = 2.0025 and ΔH = 0.6 mT. The comparison of obtained results with literature data for γ-irradiated fluoride glasses and ion-implanted oxide glasses of different compositions permitted to conclude that GL is due to hole defects typical of fluoride glasses and localized on several anions (fluorines and oxygen(s)); anisotropic FA₁- and FA₂-spectra are attributed to molecular 0₂⁻-ions, and narrow isotropic signal is supposedly assigned to big molecular ions (O₂O⁻, 0₄⁻ , CO⁺, CO⁻) located in voids of damaged implantation layer.     

Bi/Tm共掺TiO2-BaO-SiO2-Ga2O3玻璃光谱特性与能量转换机理研究

用高温熔融法制备了Bi、Tm、Bi/Tm掺杂TiO₂-BaO-SiO₂-Ga₂O₃玻璃系统。在808 nm激光激发下, 与Tm单掺杂玻璃相比, Bi/Tm共掺玻璃中Tm³⁺的³H₄→³F₄跃迁荧光(~1485 nm)得到了显著的增强, 而Tm³⁺的³F₄→³H₆跃迁荧光(~1810 nm)减弱。在980 nm激光激发下, Tm单掺玻璃中没有观察到Tm离子的特征发光, 而在Bi/Tm共掺玻璃中观察到Tm³⁺的³F₄→³H₆跃迁荧光(~1810 nm)。这是由于在808和980 nm激光二极管(LD)各自激发下, Bi/Tm共掺玻璃中活性Bi离子的近红外发光能量传递给Tm³⁺, 分别产生³F₄→³H₄与³H₆→³H₅跃迁所致。采用Inokuti-Hirayama模型, 分析了该玻璃体系中Bi→Tm的能量传递机理。结果表明, Bi→Tm的能量传递属于电偶极–偶极相互作用。     

Valency states of Yb, Eu, Dy and Ti ions in Li2B4O7 glasses

Absorption and emission spectra of Eu and Dy, Yb and Ti ions in Li₂B₄O₇ glasses grown in oxygen and hydrogen gas atmospheres were measured for valency states and lattice-sites analysis. For the Li₂B₄O₇ glass doped with Eu²⁺, Eu³⁺ and Dy³⁺ ions which were grown in oxidizing and reducing atmospheres, absorption and emission bands due to these ions were investigated before and after γ-irradiation. For the Yb³⁺-doped Li₂B₄O₇ glass, a weak, broad band was observed near the sharp 976.3 nm absorption band. The origin of this band is discussed in comparison with other glasses. Moreover, irradiation experiments using γ-rays were also performed in order to investigate the possibility of valency change of Yb ions. It was found that Ti⁴⁺ ions, which are produced under oxidizing atmosphere, change to Ti³⁺ ions after γ-irradiation with a dose of 10⁵ Gy. An additional absorption band observed at about 500 nm is due to the Ti³⁺ ions accompanied by charge-compensating vacancy and does not give any emission.     

Preparation of Eu: YVO4 red and Ce, Tb: LaPO4 green phosphors by hydrolyzed colloid reaction (HCR) technique

Eu³⁺: YVO₄ red and Ce³⁺, Tb³⁺: LaPO₄ green phosphors were prepared by newly discovered hydrolized colloid reaction (HCR) technique at low temperature (< 100 °C) and atmospheric pressure utilizing subsequent calcining and reductive treatments, respectively. The incorporation of activators (Eu³⁺ and Ce³⁺, Tb³⁺) in these very porous powders was checked by X-ray diffraction (XRD), scanning electron microscopy (SEM) and luminescence investigations.     

铽离子掺杂锆酸钡粉体制备及其光学性能研究

采用水热法合成了不同铽离子掺杂量的BaZrO₃粉体, 采用XRD、SEM、FTIR、荧光光谱仪等检测方法对样品的结构、形貌及光学性能进行表征。对部分水热产物进行煅烧处理, 研究温度对其发光性能的影响。结果表明, 水热产物均为立方钙钛矿结构, 铽离子掺杂进入BaZrO₃晶格, 占据B位Zr的位置。样品的微观形貌为粒度分布较为均匀的球体。不同铽掺杂量得到的BaZrO₃球体在244 nm光激发下均观察到了来自基体的宽带发射和Tb³⁺的特征发射峰, 且在Tb³⁺掺杂浓度为5mol%附近峰值最大。温度对发光性能影响显著, 随着煅烧温度的升高, 发光强度逐渐减弱。     

Microstructural changes in oxygen-irradiated zirconium-based alloy characterised by X-ray diffraction techniques

We have carried out irradiation with 116 MeV O⁵⁺ ions on Zr–1Sn–1Nb–0.1Fe (ZIRLO) alloy at different doses and the microstructural parameters of the irradiated samples have been characterised by X-ray Diffraction Line Profile Analysis (XRDLPA). The average volume-weighted and surface-weighted domain size, microstrain and dislocation density have been estimated as a function of dose. There was a drastic decrease in domain size from unirradiated sample to the sample at a dose of 1 × 10¹⁷ O⁵⁺/m², but these values saturated with increasing dose of irradiation. The values of microstrain were found to increase with dose. The dislocation density increased almost by an order of magnitude for the samples irradiated with 1 × 10¹⁸ O⁵⁺/m² and 5 × 10¹⁸ O⁵⁺/m² as compared to the unirradiated samples.     

氦离子辐照下钨纳米丝的自保护行为

采用低能量(200 eV)大流强的He⁺辐照多晶钨材料,辐照温度为1023 K和1373 K,辐照剂量为1.0×10²⁵~1.0×10²⁶ ions/m²。用称重、扫描电子显微镜、导电原子力显微镜等手段分析辐照后钨材料的质量损失、表面形貌和内表面缺陷分布,研究了刻蚀速率与表面形貌的关系。结果表明,具有粗糙钨纳米丝表面的钨样品刻蚀速率只有平滑表面的30%。其原因是,在大流强He⁺辐照下钨表面纳米丝的形成阻碍钨原子的溅射。这也意味着,钨纳米丝表面的形成可作为钨材料的自保护结构层,抑制ITER相关辐照下的强刻蚀。     

Al3+/Yb3+/P5+掺杂对石英玻璃紫外透过和紫外激发荧光的影响

采用溶胶-凝胶法结合高温真空烧结工艺制备了不同浓度的Al³⁺/Yb³⁺/P⁵⁺掺杂石英玻璃。研究了P⁵⁺和Al³⁺的引入对Yb³⁺掺杂石英玻璃紫外透过和紫外激发荧光光谱, 以及Yb4d电子结合能的影响, 并初步探索了其机理。研究结果表明, Al³⁺/Yb³⁺/P⁵⁺掺杂石英玻璃在190~300 nm波段的吸收主要来源于O^2-→Yb³⁺的电荷迁移吸收, 其谱带位置和Yb4d电子结合能随Yb³⁺的第二配位元素(Al、Si、P)电负性增大向高能方向移动。真空烧结条件下, 引入Al³⁺会引发石英玻璃中Yb³⁺还原为Yb²⁺, 其典型的吸收峰位于330 nm处; 然而, 在Al³⁺/Yb³⁺共掺的基础上再引入P⁵⁺, 且P⁵⁺/Al³⁺摩尔比大于1时, 可以有效抑制Yb²⁺的形成。紫外光激发引起的近红外发光(976 nm)是电子从电荷迁移态弛豫到Yb³⁺激发态向基态跃迁的结果, 可见发光(525 nm)归因于Yb²⁺的5d→4f跃迁。本文研究结果对通过优化工艺和调整组分制备出高性能的Yb³⁺掺杂光纤具有一定的指导意义。     

可见光波段稀土激光晶体的研究进展

可见光激光在数据存储、光通讯、激光显示、激光医疗、激光打印以及科学研究等领域具有非常重要的应用价值。随着蓝光LD泵浦源的商用化, 直接泵浦稀土离子掺杂激光晶体实现可见光激光输出吸引了人们极大的研究兴趣。目前, 可见光稀土离子主要集中在Pr ³⁺、Dy ³⁺、Tb ³⁺和Sm ³⁺等。其中, Pr ³⁺的研究较多, 发光波长涵盖面较广, 发射波段覆盖蓝光、绿光、红光、橙光; Dy ³⁺和Tb ³⁺因为能够发射黄光以填补Pr ³⁺的不足也吸引了广泛的研究; 此外, Sm ³⁺和Eu ³⁺也是典型的可见波段稀土发光离子。本文综述了近几年可见波段稀土离子掺杂激光晶体的研究现状, 主要以Pr ³⁺、Dy ³⁺、Tb ³⁺和Sm ³⁺掺杂YAlO₃ (YAP)、Mg : SrAl₁₂O₁₉ (SRA)等晶体为研究对象, 总结了一套适合Pr ³⁺掺杂材料的判据, 对晶体生长、结构、热学性能、偏振光谱性能和激光性能进行了系统的研究。     

The luminescence of doped and undoped BaLn2(MoO4)4 (Ln = La,Gd)

The luminescence of nominally pure BaLn₂(MoO₄)₄ (Ln = La,Gd) is reported. Below 300 K molybdate emission is observed. The following activators were investigated: Eu³⁺, Tb³⁺, Pb²⁺ and Bi³⁺. The two lanthanide ions show their characteristic emission, the two s² configuration ions give an emission in which the host-lattice group as well as the activator is involved. The luminescence properties of these compositions are discussed and compared with those of related materials.     

Structural properties of swift heavy ion beam irradiated Fe/Si bilayers

The Fe/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. Ag⁺ and Au⁺ ions of 100 MeV at two different fluencies such as 1 × 10¹² ions/cm² and 1 × 10¹³ ions/cm² at a pressure of 10^− 7 torr were used to irradiate the Fe/Si samples. The irradiated samples were analyzed by High-Resolution XRD and it reveals that the irradiated films are having polycrystalline nature and it confirms the formation of the β-FeSi₂. The structural parameters such as crystallite size (D), strain (ε) and dislocation density (δ) have been evaluated from the XRD spectrum. The role of the substrates and the influence of swift heavy ions on the formation of β-FeSi₂ have been discussed in this paper.     

Highly stable persistent spectral hole burning in Eu ions doped oxy-fluoride glasses of 30CaF2–10Al2O3–60B2O3

High temperature persistent spectral hole burning up to room temperature has been observed in Eu³⁺ ions doped oxy-fluoride glasses with a composition of 30CaF₂–10Al₂O₃–60B₂O₃ (mol%) melted in a reducing atmosphere. The hole stability was studied through light-induced hole refilling and temperature cycling experiments. The burned holes survive thermal cycling to 300 K due to a high barrier height of 0.69 eV in the sample.     

Deposition and photoluminescence of sol–gel derived Tb:Zn2SiO4 films on SiO2/Si

Tb³⁺ doped Zn₂SiO₄ films have been deposited on SiO₂ buffered Si wafers by sol–gel method. The structures of these films have been investigated with X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The results revealed that these films were composed of nanometer-size grains with a Willemite structure and had smooth surfaces. Photoluminescence measurements of the films showed a strong emission from ⁵D₄ to ⁷F₅ at 544 nm. The blue emission from ⁵D₃–⁷F_j was depressed because of cross-relaxation effect. The decay kinetics of the ⁵D₄–⁷F₅ green emission was studied and a best fitting was obtained by a double exponential function. The lifetime of the excited ⁵D₄ state is estimated to be 5.2 ms.