声表面波大带宽滤波器的设计

报道在Ｙ旋１２７．８６°Ｘ传ＬｉＮｂＯ＿３基片上采用１／８λ＿０，５／８λ＿０结构的切指加权换能器的声表面波滤波器，成功地研制了中心频率为４０ＭＨｚ，３ｄＢ带宽为２０ＭＨｚ，矩形系数（Δｆ＿４０ｄＢ／Δｆ＿３ｄＢ）为１．４８，带内波动＜１．２ｄＢ，带外抑制＞４０ｄＢ．插入损耗＜３８ｄＢ，相对带宽（Δｆ＿－３ｄＢ／ｆ＿０）大于５０％的滤波器。     

声表面波波导耦合双模谐振窄带滤波器

本文利用集总参数等效电路模型计算了声表面波波导耦合双模谐振窄带滤波器的频率响应。讨论了谐振器各设计参量对滤波器性能的影响。在Ｘ－１１２°ＹＬｉＴａＯ＿３基片上实验制作了中心频率１１４ＭＨｚ左右，Δｆ＿（－３ｄＢ）分别为７０ｋＨｚ和４０ｋＨｚ的二极和四极窄带滤波器。对二极滤波器，阻带抑制小于一３０ｄＢ；对四极滤波器，阻带抑制小于一５０ｄＢ；匹配后插损３ｄＢ。理论计算与实验结果一致。     

新颖的掺铒光纤放大器无源复合组件的研究

报道了一种将光波分复用器与光隔离器集于一体的适用于掺铒光纤放大器的新颖复合组件。根据复合组件的性能指标对组件的结构参数进行了优化设计。实际制作的复合组件，得到泵浦光插入损耗＜０．６ｄＢ，信号光的插入损耗＜１．５ｄＢ，反向隔离度＞４２ｄＢ，体积为９×４５ｍｍ３。将复合组件用于掺铒光纤放大器中（前向泵浦方式）得到约３０ｄＢ的小信号增益，１０ｄＢｍ的饱和输出功率。     

C波段高隔离度调制器的研究

介绍了一种采用混合集成电路工艺制作的隔离度大于１００ｄＢ的高隔离Ｃ波段ＰＩＮ调制器，讨论了隔离度与ＰＩＮ管级数及腔体结构的关系，提出了提高通断比的关键途径。其主要技术指标为：ｆ＝５．４～５．８ＧＨｚ，插损＜３．０ｄＢ，隔离度＞１００ｄＢ，上升沿、下降沿时间＜６０ｎｓ。     

C波段高隔离度调制器的研究

介绍了一种采用混合集成电路工艺制作的隔离度大于１００ｄＢ的高隔离Ｃ波段ＩＮ调制器，讨论了隔离度与ＰＩＮ管级烽及腔体结构的关系，提出了提高通断比的关键途径。其主要技术指标为：ｆ＝４．４－５．８ＧＨｚ，插损〈３．０ｄＢ，隔离度〉１００ｄＢ，上升沿、下降沿时间〈６０ｎｓ。     

低插损极窄带声表面波滤波器设计

利用集总参数等效电路模型计算了声表面波双模耦合谐振滤波器的频响．通过改变谐振器各个参量使滤波器指标满足要求．在ＳＴ石英基片上成功研制出中心频率２２８ＭＨｚ，△ｆ－３ｄＢ＝１５０ｋＨｚ，插损为３ｄＢ，阻带抑制小于－５０ｄＢ的铁路专用寻呼机用滤波器。理论计算与实验结果一致。     

集成900MHz陶瓷介质滤波器的实现

本文给出了一种新颖的具有高选择性、低损耗移动通信用的集成一体化陶瓷介质滤波器的结构和设计方法，重点给出了结构参数与电参数之间的关系。实验结果表明本文给出的设计方法是有效的。滤波器带内插损小于１ｄＢ，带外抑制大于３０ｄＢ。整个电路尺寸６ｍｍ×１８ｍｍ×１２ｍｍ。     

Ka频段GaAs单片平衡混频器

报道Ｋａ频段ＧａＡｓ单片平衡混频器的设计和研究结果。用自行开发的“ＴＵＭＭＩＸＥＲ”软件进行电路设计，工艺以半绝缘ＧａＡｓ为衬底，采用ＮｂＭｏ／ＧａＡｓ接触形成肖特基势垒二极管，以ＳｉＯ２和聚酰亚胺双介质为保护膜，增强了工艺的成功率。研制成功的芯片尺寸为：２ｍｍ×３ｍｍ×０．２ｍｍ，在ｆ＝３１～３６ＧＨＺ范围内ＮＦＳＳＢ≤１０ｄＢ，最佳点ｆ＝３２．２ＧＨｚＮＦ．ＳＳＢ＝８．７ｄＢ［ｆＩＦ＝１．２ＧＨｚ］。     

Ku波段倍频放大组件

本文报道了一个Ｋｕ波段倍频放大组件的研究结果。输入信号采用ＦＥＴ二倍频，经过ＰＩＮ二极管调制器，最终由Ｋｕ波段栅控脉冲功率放大器输出。在２ｆ０±０．３（ｆ０＝８．２５ＧＨｚ）范围内，脉宽１０μｓ，占空比１０％，脉冲输出的功率大于０．５Ｗ，脉冲前后沿小于２０ｎｓ隔离度大于５０ｄＢ．     

8毫米功率HBT研究

简要介绍了异质结双极晶体管（ＨＢＴ）的发展现状。对ＨＢＴ器件性能进行了理论分析、设计并制作了功率ＨＢＴ器件样品。器件性能达到：ｆ＿Ｔ＝４０ＧＨｚ，ｆ＿（ｍａｘ）＝３２ＧＨｚ，在８ＧＨｚ工作频率下测量，输出功率为１００ｍＷ，功率附加效率为３１．３％，增益为９．４ｄＢ；ｆｏ＝１２ＧＨｚ，输出功率为２３．６ｍＷ，增益６．１ｄＢ，功率附加效率为２３．４％。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.