Turbo码在LMDS系统中的应用

介绍了LMDS(LocalMultipointDistributionService)系统结构及系统的信道模型和前向纠错(FEC—ForwardErrorCorrection)机制。易受环境影响的LMDS系统信道特性决定了需要采用纠错能力强的纠错编码方法,在IEEE802.16工作组草案建议的MSUI(ModifiedStanfordUniversityIn-terim)信道模型下,分析了LMDS系统前向纠错采用Turbo码时的译码性能并仿真比较了RS(Reed-Solomon)码和Turbo码的误码率,同时也比较了不同Turbo码译码方法的性能。从仿真结果来看,Turbo码能够明显提高LMDS系统的前向纠错性能,可以应用到实际LMDS系统中去。     

LDPC码在未来移动通信中的应用

文章简要介绍了一种新型纠错码——LDPC码的编译码原理,分析了其在移动信道中的性能,并与Turbo码进行了比较。仿真表明,即使不使用交织器,非规则LDPC码的纠错能力仍优于Turbo码,因而在未来移动通信中具有极好的应用前景。     

等码重级联码的设计及其性能分析

总结了等重纠错码的生成方法,给出了利用等重码构造脉冲位置调制的实现方案。设计了两种分别基于Turbo码和mReed—Solomon码的级联码．并对其AWGN信道下的误码率等性能指标进行了仿真分析。结果表明,在高码率情况下,RS码与PPM码的级联码性能优于Turbo级联码2dB。     

(16,12) RS缩短码编译码原理及性能分析

在各类数字通信系统以及计算机存储和运算系统经常利用差错控制编码降低误码率,提高通信质量,满足对数据传输通道可靠性的要求. RS 码是一种性能优良的前向纠错码,具有同时纠正随机错误和突发错误的能力,它的构造特点决定了其非常适合于纠正突发性错误.文中在阐述 RS 系统码编译码原理的基础上,提出了(16,12)RS 缩短码的编译码方法,利用 MATLAB 对(16,12)RS 缩短码在高斯信道和瑞利信道条件下的纠错能力进行仿真,并分析其纠错性能     

突发信道下多进制LDPC码的性能研究

给出一种新的Q LDPC码(多进制LDPC码)译码简化算法,比较了在突发噪声信道以及衰落信道下,高码率(码率不低于8/9),短帧(帧长小于5 000 b)情况下Q LDPC码与RS码的纠错性能,并分析了其译码复杂度。仿真结果表明,改进后的Q LDPC码具有很好的抗突发和抗衰落性能,在突发噪声长度高达144 b的情况下,在误帧率为10-4的水平下,Q LDPC码的编码增益超出RS码2.7 dB,而在瑞利衰落信道下,则要比RS码多出9 dB的编码增益。这对于Q LDPC码应用具有重要的实际意义。     

双二元Turbo码的译码算法研究

双二元Turbo码（double-binary Turbo code）是支持无线城域网（WMAN）802．16d标准中多载波OFDM系统物理层采用的前向纠错码方案之一。相对于经典Turbo码，它具有编码效率高，相同复杂度译码器下纠错性能好以及译码时延小等优点。现介绍了双二元Turbo码的编码器结构特点，并且详细推导了双二元Turbo码的两种译码算法，同时给出了仿真性能曲线。     

Turbo码高速译码器设计

Turbo码具有优良的纠错性能,被认为是最接近香农限的纠错码之一,并被多个通信行业标准所采用。Turbo码译码算法相比于编码算法要复杂得多,同时其采用迭代译码方式,以上2个原因使得Turbo码译码器硬件实现复杂,而且译码速度非常有限。从Turbo码高速译码器硬件实现出发,介绍Turbo码迭代译码的硬件快速实现算法以及流水线译码方式,并介绍利用Altera的Flex10k10E芯片实现该高速译码器硬件架构。测试和仿真结果表明,该高速译码器具有较高的译码速度和良好的译码性能。     

宽带移动通信中Turbo乘积码的仿真研究

推出了一种新型的纠错码——Turbo乘积码(TPC),描述了Turbo乘积码的编译码基本思想,详细地分析了TPC的Turbo软迭代译码的核心思想,并对AWGN信道和瑞利衰落信道下的TPC的译码性能做了仿真分析,从仿真结果可以看出,在高编码效率时,TPC不仅具有更高的码率,而且可以获得很好的误码率性能,所以乘积码的软迭代译码方案有很好的应用性,在未来的宽带移动通信中具有广阔的应用前景。     

RS（16,12）缩短码编译码原理及性能分析

在各类数字通信系统以及计算机存储和运算系统经常利用差错控制编码降低误码率,提高通信质量,满足对数据传输通道可靠性的要求。RS码是一种性能优良的前向纠错码,具有同时纠正随机错误和突发错误的能力,它的构造特点决定了其非常适合于纠正突发性错误。文中在阐述RS系统码编译码原理的基础上,提出了RS（16,12）缩短码的编译码方法,利用MATLAB对R S（16,12）缩短码在高斯信道和瑞利信道条件下的纠错能力进行仿真,并分析其纠错性能。     

一种用于cdma2000年的低复杂度Turbo码译码器

由于Turbo码优异的纠错性能,使得其在第三代移动通信（3G)系统中倍受重视。无论是WCDMA还是cdma2000都将其作为侯选的信道编码方案,并且将其列为3G的核心技术之一。但是Turbo码存在译码复杂度大、译码延时长的缺点。在这里,我们提出一种用于cdma2000的低复杂度Turbo码译码器,即结合CRC校验来减少译码过程中的迭代次数。仿真结果证明使用该译码器可以在大信噪比时大大降低译码复杂度和译码延时。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.