YBa2Cu3O7—δ超导体的磁穿透深度及相对能隙

根据测得的表面电阻R_S(T),通过在BCS理论框架中引入一个修正电导率,计算出YBa_2Cu_3O_(7-δ)(YBCO)超导材料的磁穿透深度和简约能隙与温度的相关性.引入修正电导率主要是根据YBCO超导体中电子结构表示Cu-O链对微波表面电阻的贡献.计算得到的磁穿透深度和相对能隙与实验结果符合得相当好.     

液氦温度下国产铌材超导微波表面电阻

本文介绍在液氦温度下对国产铌材(Nb2-1)超导微波表面电阻的实验研究。测量是在X波段TE_011模式腔上进行的。温度在4.2K时无载品质因数Q_0为4.3×10~6,相应的剩余表面电阻为1.8×10~(-4)Ω。     

高温超导天线在天线RCS减缩中的应用

高温超导(HTS)体由于具有较低的表面电阻,在天线应用中,它可以提高天线的效率.天线作为特殊的散射体,会将部分接收的入射场再辐射出去,而超导天线散射场的强度可以通过控制温度来进行控制,并且高温超导微带天线可以实现天线小型化,这就可以实现减缩天线雷达散射截面(RCS)的目的.对高温超导线天线和微带贴片天线的分析结果证明了结论的可行性.这是超导体除了增加天线效率以外的在天线设计方面的另一个应用.     

用准光型开放腔测量超导体表面电阻

研制的用半球形反射镜面和一平面等构成的准光型开放腔,具有高Q值、弱耦合和检测灵敏度高等优点,成功地在3毫米波段测量了YBa_2Cu_3O_(7-x)超导体平面样品的表面电阻Rs(T)。本文详细描述和分析了准光型开放腔的结构和理论,并简单分析了上述超导样品的测量结果。     

基于FDTD的约瑟夫森结与超导传输线协同分析方法

为实现高性能处理器,超导RSFQ（快速单磁通量子）电路被提出.该电路主要由超导约瑟夫森结和超导无源传输线组成,对其建模分析是超导RSFQ电路设计的基础.本文提出了基于FDTD（时域有限差分）的约瑟夫森结与超导传输线的协同分析方法.该方法采用FDTD数值方法求解超导传输线的电报方程.在超导传输线与约瑟夫森结交界处的非线性边界条件上,采用了Newton-Raphson迭代算法.数值结果表明,本文提出的约瑟夫森结和超导传输线的协同分析方法与WRspice仿真软件相比具有相同精度,且运算效率显著提高.     

简讯

日本日立公司制成一种三端约瑟夫逊结超导晶体管.据称可看作是向平面结构超导晶体管发展迈出的新的一步.该器件用于超导电路能极迅速地开关,不需要恢复到超导状态等待电流下降到零.它在液态氦温度-269℃条件下工作,开关速度达20微微秒,功耗为5微瓦. 新器件将电源和两个邻近的超导元件漏极置于纯     

高压输电线路绝缘子在线测试

本文介绍了绝缘子污染的测量方法,表面电阻测量装置和泄漏电流检测装置,并取得一些结果.表明超高压线路绝缘子的绝缘在线监测是完全可行的.     

半导体技术

1,N3,TN4 96040311超导/半导兼容技术在微电子技术中的应用/刘融,钱文生,魏同立(东南大学微电子中心)l/低温与超导.一1996.24(l)一8~13 该文针对VLsl系统集成度提高后产生的一些问题,提出了将超导/半导兼容技术应用于微电子技术中,并对超导/半导兼容材料的制作以及超导/半导兼容技术,包括超导引线、超导/半导兼容器件与IC、超导/半导混合IC进行了讨论.图3参11(木)主体原子键长而变化的晶格驰豫效应,并将GaP等掺杂半导体的计算结果与实验数据及其它理论的计算值作了比较.表3参12(木)TN3 960403120:/si(1oo)非重构表面LEPS相互作用势模…     

含超导电力装置的电力系统失超检测分析

我国电力基础设施的建设和电能传输能力正在不断提高.过去的输电线路搭建年代久远,大多数已经非常老旧,在新时期很难满足现代化的电力输送要求和负荷承载要求.超导设备能够满足现代电力系统的发展要求,传输容量大,在过程中所损耗的电量很小,同时具有体积小,污染少等优点.我国电力系统中正在逐步推广使用含超导设备的装置.但超导电力装置中的失超问题是阻碍其正常运行的关键性问题,对电力系统进行失超检测成为提高超导装置运行能力必要的手段.本文对超导电力系统失超检测问题进行分析,旨在提高电力系统的运行水平.     

超导电缆的结构、优势及发展机遇

高温超导电缆以液氮为制冷剂,结构紧凑,可以以极低的损耗实现大电流输电,在资源节约、环境保护等方面有着独特的优势.本文介绍了超导电缆的结构及各部分功能,概述了我国超导电缆的发展现状,最后结合国家的产业政策,阐述了我国超导电缆的发展机遇.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.