基于MZI结构和级联SOA的宽相位容限全光异或门

传统使用半导体光放大器(SOA)中交叉相位调制( XPM)效应构成全光逻辑异或(XOR)门的方案,由 于受到单个SOA中XPM效应自身原理的限制,需要精确的相位控制。本文提出了一种基于马赫 -增德尔干 涉仪(MZI)和级联SOA中XPM效应实现全光逻辑异或门的新方案。本文方案使用对称的MZI结构 ,在两臂 上分别放置两个级联的SOA,通过对时钟光的相位调制,达到对两级输入信号光进行XOR运算 的目的。在 40Gbit/s下的仿真结果表明,本方案易于调节,只需要两束输入信 号光以相反比例分光,即可对其进行异或 逻辑运算,在放宽了分光比取值范围的同时,也降低了对XPM效应中相位控制的要求,实现 了宽相位容 限的全光逻辑XOR门。研究了时钟光功率和输入信号分光比对逻辑运算结果的影响,发 现输入信号分 光比的不同步变化对输出信号质量的影响较为明显。对提高方案速率的方法进行了讨 论。     

基于光纤XPM光学生成UWB信号的方法

提出了一种基于色散位移光纤(DSF)的交叉相位调制(XPM)效应的超宽带(UWB)光学生成方法。该方法首先利用DSF的XPM效应实现高功率的高斯泵浦光对低功率的直流探测光的交叉相位调制,然后利用光纤布拉格光栅(FBG)对探测光进行鉴频,实现相位调制到强度调制的转换,从而获得单周期UWB信号。利用光子仿真软件对方案进行了仿真实验,得到了中心频率分别为7GHz和6.95GHz、相对带宽分别为143%和145%的UWB信号,验证了所提方法的可行性。同时,研究了输入信号脉冲宽度、FBG的反射率、鉴频器的类型对产生的单周期UWB脉冲信号波形和频谱的影响。仿真实验的结果表明,该方案对输入信号脉冲宽度不是过宽的情况下具有良好的容忍度,光学高斯带通滤波器、波分复用器和FBG等光滤波器均可作为鉴频器,采用FBG优点是可通过改变反射率灵活地调整产生的UWB脉冲信号的波形。     

基于SOA的交叉相位调制生成UWB信号的研究

超宽带信号(UWB)的光学生成技术是光载超宽带通信系统(UWB-over-fiber)的关键技术,半导体光放大器(SOA)的非线性特征在全光信号处理中有着广泛的应用。提出基于SOA的交叉相位调制(XPM)效应的UWB的光学生成方法。该方法首先利用SOA的XPM实现高功率的高斯泵浦光和低功率的直流探测光的XPM,然后利用光学滤波器对探测光进行鉴频,实现相位调制到强度调制的转换,从而获得单周期UWB信号。提出了采用光带通滤波器和波分复用器对探测光进行鉴频的两种方法,获得中心频率分别为5.15GHz和5.05GHz,相对带宽分别为150%和149%的UWB信号,符合FCC标准。     

利用光子晶体光纤XPM效应实现40 Gb/s全光3R中的再整形

研究了一种通过交叉相位调制(XPM)效应实现40 Gb/s信号全光3R再整形的方案,方案的核心是一个用超高非线性光子晶体光纤作为其中一臂的马赫-曾德仪,通过计算并调节这一臂的光子晶体光纤的长度,可以利用XPM效应使通过此臂的信号光产生π的非线性相移,所得光与另外一臂的光信号相干涉,实现对受噪声污染和色散影响信号净化和整形的作用.并用Optisystem对其进行了仿真实验.     

全光纤锁模腔结构的全光时钟提取实验研究

分析并实验验证了一种全光纤锁模激光器结构的全光时钟提取方案。方案中,采用高非线性光纤(HNLF)替代传统结构中的半导体光放大器(SOA),利用光纤中的交叉相位调制(XPM)效应实现腔内的非线性调制,避免了以SOA作为非线性光调制器件的锁模激光器全光时钟提取方案中,由于载流子恢复时间较长从而限制工作速率的缺点,以达到突破"电子瓶颈"的目的。理论分析了光纤中交叉相位调制的特性以及环形锁模腔的时钟提取原理,并通过实验,从40Gbit/s的光归零码(RZ)信号中提取出了高质量的光信号时钟。该方案可以直接在更高速率条件下工作。     

基于SOA的XPM波长转换器的噪声特性分析

研究了交叉相位调制(XPM)型波长转换器的噪声特性,讨论了如何选择XPM型波长转换器的注入电流等参量使系统处于最佳工作状态.结果表明:改变注入电流可使波长转换器周期性处于正相和反相工作状态,最佳的正反相工作点则位于使两臂半导体光放大器(SOA)的增益相等的注入电流附近.对于输入信号光和直流光功率,存在一个最佳功率值,使得波长转换的Q值最高.     

基于SOA中XGM效应的全光译码器的研究

文章基于半导体光放大器(SOA)中的交叉增益调制(XGM)效应.提出一种全光译码器的实现方案.该方案具有XGM效应本身的优点,如效率高、工作波长范围宽、逻辑运算只与输入光功率有关、不需要进行精确的相位控制和对偏振不敏感等.分析了该方案的工作原理,并使用OptiSystem软件对这种全光译码器进行了仿真.最后分析了全光译码器的输出功率和输出消光比与输入泵浦光功率、探测光功率之间的关系.     

基于SOA交叉增益调制的2.5Gbit/s NRZ码 全光波长转换实验研究

基于SOA交叉增益调制效应(XGM)进行了2.5Gbit/s 31位非归零(NRZ)伪随机码的全光波长转换实验,分析了该方案下转换信号的消光比、信噪比、平均功率与输入连续光、信号光功率、波长的关系.实验中转换信号的光信噪比可达40dB以上,消光比和信噪比均大于10dB,符合ITU-T G.691标准.信号波长向下转换间距可达60nm,是目前基于SOA中的XGM效应进行波长转换获得的最大的波长间距.     

适用于PolSK调制的FWM型全光波长转换器

文章提出了一种利用半导体光放大器(SOA)中的四波混频(FWM)效应、适用于偏振移位键控(PolSK)调制的全光波长转换器方案.注入的辅助光可以缩短SOA增益恢复时间,增大饱和功率,提高波长转换效率.通过数值模拟从理论上实现了这种全光波长转换器,研究了输入泵浦光、信号光和辅助光功率对全光波长转换器输出特性的影响.     

基于光子晶体光纤中自相位调制效应的6×40 Gbit/s 全光波长组播实验研究

基于非线性效应的全光组播,以其能直接在光域内将信息从单节点路由到多目标节点而受到广泛关注。实验证实了利用色散平坦高非线性光子晶体光纤级联光学滤波器实现全光波长组播的新方案,通过使用窄带光学滤波器次选择自相位调制加宽光谱分量,对速率为40 Gbit/s 的归零信号实现了极性保持、通道间距100 nm 的1 到6 信道全光波长组播。进一步研究了所设计全光波长组播器的动态特性,结果表明,它具有20 nm 的宽带波长调谐范围,同时,对输入信号的光功率波动具有较强的容忍性,系统整体结构简单,在未来透明光子网络中很有应用潜力。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.