多单元压电陶瓷类变形镜高压驱动电源

针对变形镜压电陶瓷类驱动器单元数多的特点,设计一种高带宽适合扩展成多通道输出的压电陶瓷驱动电源,它利用光耦分相隔离从源极驱动功率NMOS管,简化了电路结构并保证了功率带宽。该驱动电源驱动100 nF容性负载时,可实现单端到地-300~＋300 V双极性高压输出,电压增益35.5 dB,信号不失真情况下,小信号响应频率达10 kHz,大信号响应频率2 kHz,瞬时充放电电流可达400 mA。实验表明该驱动电源的性能能够满足变形镜驱动的要求且电路结构简单。     

高精度大功率压电陶瓷驱动关键技术

压电陶瓷驱动电源是压电陶瓷微位移系统中的关键部件。以高压功率放大器PA93为核心,提出了一种新型高精度、大功率压电陶瓷驱动电源,适合驱动大行程、大推力压电陶瓷致动器。重点阐述了电路的设计方案,对复合放大电路进行了特性分析。实验结果表明,该驱动电源具有精度高,输出电压高,电流大,稳定性好的特点。当驱动等效负载电容为24 μF的压电陶瓷时,在0~100 Hz频率范围内实现了0~10 V信号到0~100 V信号的动态放大,输出电压精度优于3×10-5,最大输出电流350 mA。     

一种全集成高效率多通道神经电刺激电路

设计了一种超低待机功耗、高效率的16通道高压神经电刺激集成电路(IC)。该电路主要包括1个基于串-并联电荷泵的高压产生模块，以及1个16路独立配置的通道输出驱动电路模块。高压产生模块将输入的1.65 V低压域电压转换为高压域电压6.6、9.9、13.2 V;通道输出驱动电路根据设定的刺激电流和电极负载情况动态选择合适的高压域电压以提高电刺激效率。经测试，在1.65 V输入电压和3.3 V电源电压下，该电路待机时静态功耗约为7.6 nW,由待机至电刺激电路工作切换时间小于36 ns,电荷泵输出最大电压可达12.7 V,约为电源电压的4倍，通道控制电路能输出最高1 mA的刺激电流。与传统的固定电源电压电刺激电路相比，消耗的能量最高减少了76.9%。     

一种宽频带压电陶瓷驱动电源补偿方法研究

压电陶瓷驱动电源工作于容性负载时,恰当的环路补偿是电源稳定工作的必要条件。为提高压电陶瓷驱动器的响应速度,同时改善传统补偿方法仅补偿单极点的缺点,在分析传统压电陶瓷驱动电源补偿方法的情况下,该文提出一种高精度宽频带压电陶瓷驱动电源补偿法,实现了对极点频率低及多极点的大容值负载驱动电路的环路补偿。等效电容6.4μF的压电陶瓷为负载时,样机带宽可达5 kHz,上升沿和下降沿时间为200μs,纹波电压小于80 mV。实验结果表明,所提方法具有较优异的带宽及良好的稳定性,可应用于机器人、微位移运动平台及航空航天等压电应用领域。     

应用于负电源的电平位移电路及器件设计

本文设计了一种应用于负电源的电平位移电路。实现从0～8V低压逻辑输入到8～-100V高压驱动输出的转换。分析了该电路的结构和工作原理。基于此电路结构设计了满足应用要求的高压薄膜SOI LDMOS器件。分析了器件的工作状态以及耐压机理,并利用工艺器件联合仿真对器件的电学特性进行了优化设计。     

0.6μm CMOS感性负载自偏置直接耦合激光驱动器

设计了一种可以工作在多个速率级的光纤通信系统用激光二极管驱动电路。电路采用了有源电感负载技术、键合线寄生电感负载技术、自偏置技术和放大级直接耦合技术以提高增益、拓展带宽、降低功耗。电路采用CSMC-HJ0.6 μm CMOS技术设计、采用Smart Spice进行电路性能仿真优化。激光驱动器电路的增益可达52dB,带宽可达到525MHZ,输出调制电流在0-65mA范围内可调。电路采用5V单电源供电,功耗380mW。模拟结果显示该电路可以工作在STM-1、STM-4两个标准速率级和更高的速率上。     

应用于无源超高频射频识别标签的嵌入亚阈值参考源电流模稳压电路

本文设计了一种应用于无源超高频射频识别标签的电流模稳压电路。无源标签的能量必须通过整流电路从射频能量中获取。由于输入射频功率的巨大变化,整流电路的输出需经过稳压后才能为标签提供稳定的电源。通过嵌入亚阈值参考源对流向负载的电流进行精确控制,稳压电路的输出在-20-80℃温度范围内稳定在1-1.3V,并实现了约100kHz的带宽,保证了电源的快速恢复。电路在UMC 0.18um混合CMOS工艺下流片实现,电流功耗为1uA。     

一种微型机器鱼的压电驱动系统设计

压电陶瓷用作微型机器人的致动器具有静音、低功耗等优点,但在悬臂型应用中高位移所需的高驱动电压是其应用难点。该文针对一种双鳍式微型机器鱼的压电致动器,设计了可控制输出频率、幅值的高压正弦信号驱动系统。压电致动器的驱动模块采用PA443高压运放设计外围电路,运放电源基于集成开关芯片设计升压(BOOST)和降压升压(BUCKBOOST)开关电源电路,实现了升压比分别为27和14的+1 66 V和-166 V小型运放电源。信号源模块输出正弦脉冲宽度调制(SPWM)波并对其解调,经PA443放大成驱动电压。结果表明,该驱动系统在满足体积小和输出稳定的前提下,采用交替驱动方式连接负载,输出峰峰值可调且最大为326.5 V的正弦双极驱动电压,具有实用创新性和一定带载能力。     

增加运放改进电源稳定性的设计

一种典型的电源,在各种条件下(包括初始置位、线路、负载、温度)其电压稳定性规定为2～3％。然而,如果电源具有遥感能力,就能改善稳定性。图1a中的电路在5V电源电路上增加上了一个电路,使+V_L和-V_L之间的电压在0～-70℃范围内能稳定任5.00V±0.01V(±0.2％)。该电路将-S接点连接到负载上,可以构成遥感结构。但是,与标准的电路结构不同的     

基于TOP开关的无变压器恒流LED驱动电源设计

基于TOP开关设计了一种无变压器的LED驱动电源,这种电源利用负载端电流来驱动TOP开关,不含变压器和光耦,从而大幅减小了体积和重量,降低了成本。整体电路结构简单,能在180～50 V的宽电压范围内稳定可靠工作,并且具有恒流特性,可广泛应用于驱动5～75 W的LED照明灯的场合。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.