感应灰阶的产生技术及其在液晶显示器中的应用

针对液晶显示器灰度等级低、色彩偏移及需白平衡调整等现象,利用PD(Pixel Dithering,像素抖动)与FRC(Frame Race Control,帧速率控制)算法基于FPGA系统产生感应灰阶,从而提出了一种基于此感应灰阶技术的液晶显示器灰度增强、色彩偏移校正及白平衡调整的方法,并在液晶显示器中实际应用。实验结果表明:该方法算法简单,计算量小,采用该方法,极大地提升了显示效果,使画面层次感更丰富细腻、色彩更逼真。     

液晶电视的白平衡调整

在液晶电视生产过程中,白平衡的调整是一个关键部分,目前大都采用PC机调整。现有调整方法一般只考虑色温的误差,但基本未考虑色差,所以,产品在显示不同亮度的白信号时有些信号的色差较大,影响电视的主观效果。提出了一种白平衡调整方案,采用PC机与彩色分析仪Chroma7120,通过曲线拟合的方法补偿色温差异,实现液晶电视白平衡的调整。实验结果表明该方案既方便又能满足白平衡的调整要求。     

伽玛值、白场色温及亮度对显示效果的影响

对Gamma值、白场色温及亮度参数对显示颜色的影响进行了定量的研究。实验结果表明:选择恰当的伽玛值可以改善图像的显示效果;色温的影响大于伽玛值,选择色温值要根据显示器的具体工作环境来决定;亮度对显示效果几乎没有影响,可以根据观察条件来选择。     

一种摄像头自动白平衡的算法及硬件实现

提出了一种基于直方图扩展的自动白平衡算法,使可调整的色温范围更广,已应用于一个摄像头芯片,实践证明调整的效果更明显。     

基于FPGA的图像自适应AWB系统设计与实现

为了解决常见自动白平衡(Auto White Balance, AWB)方法的场景适应能力不足且实时性较差等问题,提出了一种基于颜色通道直方图重构的自适应AWB方法,并使用现场可编程门阵列(FPGA)对所提出的算法进行硬件电路实现,在校正图像白平衡的同时也确保了系统高速实时处理图像。首先对图像进行限制对比度自适应直方图均衡化(CLAHE)处理来提高图像对比度,然后对图像进行灰度级区间的通道分区统计,对不同场景类别的图像采用颜色直方图匹配或平移的重构方式做自适应处理。实验结果表明,该算法在处理图像白平衡时,相比基于光源估计的AWB算法,色温校正准确率提高了14%,对不同色彩场景有更好的适应性,具有实时处理能力。     

一种摄像头自动自平衡的算法及硬件实现

提出了一种基于直方图扩展的自动白平衡算法,使可调整的色温范围更广,已应用于一个摄像头芯片,实践证明调整的效果更明显.     

白平衡调整时参照物的选取

摄像机在演播厅和室外拍摄时，可根据节目内容和画面的需要，在进行白平衡调整时，选取不同的布作为参照物以得到不同的色温，来获得满意的效果。强调了白平衡调整时应注意的事项。     

基于色温估计的自动白平衡算法研究

为了解决现有灰度世界算法在拍摄大面积色块时的失效问题,提出一种在RGB色度空间的基于色温估计的自动白平衡算法。首先确定不同的光源在RjGBjG空间中的分布规律;然后根据图像中像素原始数据R／G、B／G的值确定光源信息,得到相应R、G和B增益值;最终实现白平衡调整。实验结果表明,在图形颜色信息比较丰富时,算法处理结果较灰...     

激光显示光源颜色配比和色温研究

为了实现对激光投影白平衡的实时控制,根据CIE1931和CIE1964标准色度系统,对激光红绿蓝三基色组成的激光光源进行了颜色配比和色温研究。首先,根据格拉斯曼颜色混合定律,介绍了三基色混合白光色坐标和色温的获得方法。接着,理论计算了红(638nm)、绿(532nm,520nm)、蓝(445nm)激光器在目标色温6500和9300K下的功率配比,分析了实现6500~9300K连续可调对应的功率配比变化;然后,对绿光波长变化对色温和亮度的影响以及功率下降引起的色温变化进行了分析。最后,搭建了激光光源色温测试实验系统,相比按照标准功率配比计算的理论色温值,实验获得的色温结果偏低约15%。     

在摄像中如何处理色温

色温是在摄像时调整白平衡的一个项目，如调整不好，将使画面达不到所需效果，本文介绍了使用滤色镜、滤色片、照明灯光来调整色温，使用自制白卡来调整色温，以及使用非线性编辑校色功能等来调整色温。这些方法简单有效。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.