红外双波段单站被动测距算法研究

建立了基于美国海军红外传输模型的双波段单站被动测距算法。在若干相连观测时刻，远处目标被假定为具有恒定辐射强度的点源，结合美国海军模型在3.4～5 μm、8～12 μm波段上,得到了目标辐照度与探测距离的关系式。分析表明,在相邻两个探测距离上可得到四个形如lnx+bx+c=0的超越方程,通过求解即可获得相应的目标距离。给出了黄海、东中国海区的美国海军红外辐射传输模型的全部系数。最后，给出了文中算法的理论误差曲线，分析表明该测距误差小于辐照度的测量误差。     

基于MODTRAN的红外系统对巡航导弹探测距离的估算

基于最小可分辨对比度准则,研究了在考虑背景环境下机载红外成像系统对目标最大探测距离的计算方法.分析了红外目标在3～5μm与8～12μm两个波段上的红外辐射特征和背景辐射、大气透过率等因素对探测距离的影响,给出了探测距离的推导公式.最后用MODTRAN软件对大气透过率进行了模拟计算,得到了波数间隔为1cm-的光谱大气透过率数据.计算了各微小波长区间内辐射到探测器上的辐照度.考虑到大气透过率与距离的关系,取消了传统算法中用常数或者拟合函数来代替大气透过率的方法.以巡航导弹为例,对红外系统探测距离进行了数值计算.仿真结果表明,该计算方法具有可行性.     

红外预警卫星最佳探测波段分析

为解决红外预警卫星在近中红外的最佳探测波段问题,采用建模仿真的方法获得了2～5μm波段范围内不同高度条件下火箭尾焰目标的红外辐射光谱特性,利用MODTRAN软件包计算了典型大气条件下同样波段范围内不同高度处的大气透过率和地球/大气背景红外辐射光谱特性,在此基础上计算了目标背景之间的对比度.通过分析目标背景对比度的变化规律可知:随着飞行高度的增加,目标背景对比度会先增大后减小,但无论在什么飞行高度,2.63～2.83μm和4.18～4.50μm波段的目标背景对比度都较大,比较适合目标探测,并且这两波段还具有更加精细的波段结构,实际应用中可根据探测需求选择更小的波段范围并确定相应的中心波长.     

基于系统对比度的目标探测谱段分析

天基平台下对飞机目标的探测具有距离远、目标信号能量弱的特点,需选择合理的谱段以得到较强的信号能量。本文通过建立系统对比度模型,从系统的角度分析对比度对探测谱段选择的影响,并结合目标和背景的辐射特性,对不同类型飞机在不同探测距离和探测角度下分析仿真,仿真结果表明:系统对比度可以有效选择探测的谱段,在不同波段处,系统对比度存在明显差异,且会随着探测距离和探测天顶角的增加而下降,但系统对比度的峰值不发生偏移,主要峰值点为4.15μm和4.4μm,较强对比度波段为4.09~4.19μm、4.3~4.5μm、8~9.2μm和10.5~12μm,上述波段比较适合用于飞机目标探测。     

基于图像对比度的监督波段选择方法

约束能量最小化(Constrained Energy Minimization,CEM)是一种常见的小目标探测算法,为提高该算法的探测效率,提出了基于图像对比度的监督波段选择方法(CBS)。该方法针对CEM探测原理,依据高光谱数据各波段图像的对比度以及波段间相关性,选择出对比度大且波段间相关性小的波段组合用于小目标探测。实验发现基于CBS探测结果明显优于基于图像方差的波段选择方法(VBS)的探测结果。在得到质量相当的探测图像前提下,使用CBS需要的波段数远小于使用VBS需要的波段数。CBS对于降低CEM探测的计算量,提高探测的实时性具有重要意义。     

基于对比度的红外探测系统对巡航导弹作用距离分析

为了估算红外探测系统对巡航导弹的作用距离,首先构建了巡航导弹的简化模型,分析了各主要红外辐射源在3～5μm和8～12μm两个波段上的红外辐射特征;然后指出了既有的基于表观对比度作用距离模型的不足,针对此不足推导了适用性更广泛的作用距离方程,并给出了逐步逼近法求解该方程;最后通过算例求出结果并进行了分析.     

典型大气条件下的目标-背景对比度的计算分析

大气中目标—背景对比度是进行目标探测识别的一个重要参量,本文从辐射传输理论 出发,利用辐射传输软件包MODTRAN ,计算了具体大气状况下的目标—背景对比度,并且计算了典型大气条件下可见光到红外波段上( 0. 4～14μm) 的目标—背景对比度,分析了目标背景对比度对波长的依赖关系。     

星敏感器白天观星的对比度分析

恒星-背景对比度是星敏感器白天探测恒星的一个重要参数,它决定了星敏感器可探测星等的极限值.叙述了恒星-背景对比度的计算方法,分析了星敏感器在3°× 3°视场角和0°与40°两个观测角下,6等K和M型恒星的对比度随观测高度、太阳天顶角、波段和恒星光谱类型的变化特征.结果表明:对比度随观测高度的增加按指数增加,40 km高度上的对比度是10 km上对比度的100倍左右;随太阳天顶角的增加按线性增加,长波波段上80°太阳天顶角的对比度是20°时的6倍左右;经过滤波片(B W 090)滤光的全波段(0.4～1.0μm)上的对比度和0.6～0.7μm分波段的对比度较接近;全波段上的对比度随恒星光谱类型几乎不变化.这些结果可用于星敏感器在大气层内白天观测恒星的星等极限估计.     

一种基于双波段的红外搜索与跟踪系统的单站测距方法

提出了利用IRST系统的两个探测波段进行目标定位的单站测距算法,建立了系统的测量模型,推导出了相应的定位公式及径向速度公式,并对定位误差进行了系统分析。本方法同已有的单站单波段定位方法相比,其最大的优点是不依赖于目标的运动模型,从而克服了原来算法必须假定目标运动形式的缺陷。最后,通过计算机仿真验证了所提出算法的有效性及性能。     

星载红外探测对比度的计算与分析

推导了星载红外探测在地面、大气双背景下探测器处的辐射照度对比度计算公式,计算了目标在不同温度、不同高度的目标与背景的绝对对比度和相对对比度。分析指出:随着目标温度、高度增加,在波长大于2.5 m 区域绝对对比度与相对对比度相应增大,目标高度越高,同等距离下对比度随目标高度的变化越小;波长小于2.5 m 需考虑太阳的影响;当目标在0 km 高度时,2.9~4.1 m 波段为最佳探测波段,随着目标高度的增加,可用探测波段范围增大,峰值波长向短波方向微移,当目标高度大于10 km 时,相对对比度峰值在2.6~2.8 m 之间;距离地面越近,大气对红外辐射的衰减越大。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.