一种新型6.25 Gb/s CTLE均衡器的设计

为了改善传统CTLE均衡器的均衡能力较低、使用大电容造成版图面积较大等缺点,设计了一款采用多级并联反馈网络的新型CTLE均衡器。该均衡器可用于高速串行通信,其频率补偿点以及补偿强度可调,能正确传输不同数据率的串行信号。基于SMIC 40 nm CMOS工艺对电路进行设计,仿真结果显示,在6.25 Gb/s的最大数据率下,最大补偿能力为13.8 dB,平均功耗为0.7 mW,版图尺寸为14.3 μm×13 μm。     

应用于10 Gbit/s光通信及背板传输的自适应均衡器设计

描述了一种既可用于背板传输也可用于光纤通信的高速串行收发器前端均衡器的设计。为适应光信号在传播中的色散效应,使用前馈均衡器(FFE)加判决反馈均衡器(DFE)的组合,取代了背板通信中常用的连续时间线性均衡器(CTLE)和DFE的组合。设计使用3 pre-tap、3 post-tap和1个main tap的抽头组合方式,兼顾pre-cursor和post-cursor的信号失真,有效补偿范围为15 dB。补偿系数采用完全自适应算法调整,对FFE采用模拟MSE算法调整,DFE引擎采用1/16速率数字sign-sign最小均方差(LMS)算法实现。芯片使用UMC 28 nm工艺流片,输入信号频率为10 Gbit/s。     

一种25Gbit/s CMOS判决反馈均衡器设计

为满足高速光通信系统的应用，基于标准40 nm CMOS工艺设计了一款25 Gbit/s判决反馈均衡器(DFE)电路，采用半速率结构以降低反馈路径的时序要求。主体电路由加法器、D触发器、多路复用器和缓冲器组成，为了满足25 Gbit/s高速信号的工作需求，采用电流模逻辑(CML)进行设计。经过版图设计和工艺角后仿验证，该DFE实现了在25 Gbit/s的速率下可靠工作，能提供10 dB的均衡增益，峰-峰差分输出电压摆幅约为950 mV,眼图的垂直和水平张开度均大于0.9 UI,输出抖动小于3 ps,在1.1 V的电源电压下功耗为12.5 mW,芯片版图的面积为0.633 mm×0.449 mm。     

一种25 Gbit/s CMOS自适应判决反馈均衡器

基于65 nm CMOS工艺,设计了一种25 Gbit/s带有一个无限冲激响应抽头的自适应判决反馈均衡器。该均衡器中关键路径采用堆叠式选择器和锁存器组成的半速率预测式结构,以减小环路反馈延时。自适应模块采用改进的最小均方算法,以改善抽头系数的收敛性。输出缓冲采用改进的fT倍增结构,以提升带宽并具有预加重功能。仿真结果表明,当信号速率为25 Gbit/s时,该均衡器能够自适应地实现最高20 dB衰减量的补偿,输出抖动小于10 ps。1.2 V电源供电时,整体电路在不同工艺角下的平均功耗约为120.5 mW。     

一种适用于100 Gbit/s以太网PCS的高速异步FIFO

采用0.18 μm CMOS工艺设计和实现了一种适用于100 Gbit/s以太网PCS链路的高速异步FIFO 芯片。采用双端口8T结构替代存储器,提高了工作速率。灵敏放大器利用锁存放大器和预充电技术来放大位线上微小信号,减少了传播延迟。为了减小读写时间,研究了存储单元晶体管尺寸对电平翻转时间的影响,既满足了快速访问的要求,又获得了高可靠性的信号传输。芯片(包括焊盘)面积为1.43 mm²。测量结果表明,该FIFO可工作于1.05 GHz,输出信号的眼图清晰,水平张开度达到0.91UI。当电源电压为1.8 V时,电路功耗为143.3 mW。该FIFO适用于16×6.25 Gbit/s以太网PCS链路系统。     

一种适用于严重衰减串行链路的3.3 Gbit/s模拟均衡器

介绍了一种用于严重损耗串行链路的连续时间线性均衡器(CTLE)。为了解决传统均衡器存在的过均衡和欠均衡问题,提出了一种低频增益线性可调的改进结构,实现了对不同衰减信道的增益补偿。该结构主要包括均衡滤波模块和直流失调消除模块。均衡滤波模块采用均衡单元串联的结构,提高了对信号高频成分的补偿能力。直流失调消除模块用来消除芯片制造过程中因失配而产生的直流偏移。电路采用TSMC 0.18μm CMOS工艺设计,总面积为1.2 mm×0.65 mm。测试结果表明,当速率为3.3 Gbit/s的数据通过损耗为18.8 dB的信道时,均衡器工作正常。在1.8 V的供电电压下,芯片整体功耗为124.2 mW。     

一种 65纳米 CMOS 10–20 Gb/s PAM2-4接收和发送端

本文提出了65纳米CMOS工艺下的一种 10Gb/s PAM2, 20Gb/s PAM4高速低功耗的有线电互连发送和接收端。发送端面积为430μm × 240μm,功耗为 50.56mW。通过集成可编程的 5阶预加重均衡器,发送端可以在宽范围区间内补偿各种不同的信道损失,并且针对信道特点的不同采用相应的发送电压幅度从而降低信号发送功耗。接收端均衡器面积为146μm × 186μm,功耗为5.3mW。     

一种新型的高速时钟数据恢复电路的设计和验证

针对高速(Gbit/s)串行数据通信应用,提出了一种混合结构的高速时钟数据恢复电路。该电路结构结合鉴频器和半速率二进制鉴相器,实现了频率锁定环路和相位恢复环路的同时工作。和传统的双环路结构相比,在功耗和面积可比拟的前提下,该结构系统的复杂度低、响应速度快。电路采用1.8 V,0.18μm CMOS工艺流片验证,测试结果显示在2 Gbit/s伪随机数序列输入情况下,电路能正确恢复出时钟和数据。芯片面积约0.5 mm~2,时钟数据恢复部分功耗为53.6 mW,输出驱动电路功耗约64.5 mW,恢复出的时钟抖动峰峰值为45 ps,均方根抖动为9.636 ps。     

一种多级可调的改进型CTLE均衡电路

针对高速串行链路中信号频率补偿的过均衡及欠均衡问题，基于TSMC 0.11μm CMOS工艺设计了一种增益带宽可调的改进型均衡器电路。该均衡器采用以有源电感为负载的二级放大器结构，有效补偿高频损耗的同时，减小了面积和功耗，并与三级Boost电路进行级联，实现对不同衰减信道的补偿，提高数据的完整性以及后级采样的准确性，进一步改善了均衡效果。仿真实验结果表明，所设计的线性均衡器低频增益在6.26～24.2 dB范围内8级可调，1.5～2 GHz内高频增益在28.9～40.2 dB范围内32级可调，电路整体版图面积仅为463μm×230μm。     

应用于红外大面阵数据传输的接口电路设计

红外大面阵(2560×2048)数字读出电路对芯片数据接口有高速、低功耗、强驱动能力的需求。采用0.18■m互补金属氧化物半导体(Complementary Metal Oxide Semiconductor, CMOS)工艺设计了4∶1并串转换电路、电平转换电路以及采用预加重技术的低压差分信号(Low Voltage Differential Signal, LVDS)驱动器电路。并串转换电路采用双沿采样的树形结构降低时钟频率,电平转换电路采用正反馈结构提升速度,LVDS驱动电路采用可编程电流大小的预加重副通路对主通路进行高频分量补偿,以保证驱动能力和提升高速信号的完整性。接口的数据传输速率可达到1 Gbit/s。当负载电容为2 pF时,一个通道的功耗为15.8 mW@1 Gbit/s;当负载电容为8 pF且打开预加重时,一个通道的功耗为19 mW@1Gbit/s,输出电压摆幅为350 mV,输出共模电平为1.21 V,LVDS驱动电路的所有参数均满足标准协议。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.