确定ZnO颗粒生长方向的电子背散射衍射方法

发展了利用扫描电子显微镜(SEM)与电子背散射衍射系统(EBSD)对微晶颗粒空间取向进行表征的新方法,对以气相氧化方法制备的纳米晶ZnO颗粒的生长方向进行了测量.在样品台两个不同的倾转角度下采集两幅ZnO颗粒图像,对这两幅图做图像分析,测量各枝晶臂在样品台不同倾转角时的投影角度,可以确定ZnO颗粒枝晶臂的生长方向在样品台坐标系中的空间取向,并获得各枝晶臂的长度和夹角.由EBSD确定ZnO颗粒对应的枝晶臂晶格坐标与样品台坐标之间的空间几何关系.并根据坐标变换关系可确定枝晶臂空间生长方向的晶体学取向是沿[0001]方向.     

二硫化钼纳米薄片分散液的剥离制备

文中采用液相超声剥离粉末二硫化钼制备了纳米薄片分散液,通过紫外可见吸收光谱测定分散液的浓度,并探索了超声功率、超声时间以及二硫化钼初始浓度对纳米薄片分散液浓度的影响。实验结果表明,当超声功率为350 W,超声时间为48 h,二硫化钼初始浓度为10 mg/mL时,所制备的纳米薄片分散液浓度可达0.16 mg/mL。在剥离过程中加入聚乙烯吡咯烷酮,可以有效避免由于纳米薄片自身团聚而导致的分散液稳定性差的问题,所得到的二硫化钼纳米薄片分散液可稳定存放超过两个月;同时,PVP的加入可将二硫化钼纳米薄片分散液浓度提高至0.42 mg/mL。     

纳米碳管的电子衍射及其螺旋度测量

本文对电弧放电和催化剂热解碳氢气法制备的多层直形纳米碳管的倒空间及其螺旋度，采用电子衍射进行了研究。结果表明：尽管制备方法不同，两类多层管的结构相似，皆由螺旋和非螺旋的单层石墨管组成；对其倒空间的分析以及系列倾转电子衍射实验证明，衍射图中测得的表观螺旋度值随和射条件而改变，只有在垂直入射条件下该值才代表碳管的真实螺旋度；     

Mn64Co8Si28急冷合金中的U相及长周期结构

在标准成分为Mn_(64)Co_8Si_(28)的急冷合金中观察到了一种新相,电子探针分析测定其成分为Mn66.9Co8.7Si24.4,与U相标准成分基本一致,故暂称之为U相。大角度倾转的电子衍射实验确定U相为六角晶系,其晶格常数为:a=0.68nm,c=1.29nm。图1绘出绕c~*轴倾转的一系列衍射谱中三张特征谱。因为出现了l=2k+1的斑矢,故可认为U相是简单六角结构。图1还展示了此样品因急冷条件下形成长周期结构,从而导致沿C轴方向存在一系到卫星斑点并形成明显的衍射条纹。     

透射电镜样品倾转台工作程序

本文给出了透射电镜样品倾转台工作参数。根据能任意旋转的极射赤面投影图的原理,当样品需要从一个[uvw]方向转到另一个方向时,样品可能的倾转方向,样品台倾转角,膜面旋转参数,面状特征迹线转角将被显示出来。同时,转动后的样品位向亦被确定并显示出来。它是透射电镜样品倾转台工作指南。透射电镜样品倾转台工作指南是一个软件包,它含有五个主要程序: 1.EDXY44 限据测量结果标定衍射谱,绘制衍射谱,衍射谱可旋转; 2.CBXY11 能求解任一物相任一方向的衍射谱,绘出衍射谱,衍射谱可旋转; 3.UHXY66 给出与-B方向夹角≤60°的可能的晶体学方向的位向和角坐标;     

电子断层成像技术在两种纳米材料中的应用

本文通过使用电子断层成像技术,分别对纳米金样品和纳米囊泡药物两种材料进行多角度成像研究,发现纳米金样品为圆盘状,并没有棒状结构,同时还测量了纳米金盘的厚度。纳米囊泡拟包含药物为膜状结构而非针状或棒状。多角度成像排除了二维电镜图片的假象,显示电子断层成像技术在纳米材料的应用前景。     

急冷Fe—Nb合金中的5次对称和10次对称的高分辨电镜研究

将熔融的Fe—Nb合金在高速旋转的铜辊上急冷,得到长约2～6mm,宽1～1.5mm,厚40～80μ的条带。把这样的条带直接进行离子减薄,然后供电镜观察。实验证明,该样品中同时存在着5次对称相(i相)(图1)和10次对称相(图4)。从[图2]可以看到,沿5次轴拍摄到的高分辨象上,象点的排列是非周期性的,但可找出10个象点(白点)在一个圆周上的区域(图2上已用黑点标出一部分)。实验中亦观察到i相经常与晶体相μ相长在一起(见图3)。与Al—TM中的10次相的电子衍射图相比,Fe—Nb合金中10次相的衍射斑点较少。通过大角度倾转     

系统倾转技术在TEM中的新应用

系统倾转样品是透射电子显微镜操作的一种重要实验技术，本文介绍了不依赖菊池花样实现系统倾转样品的方法，并采用该技术，发展了不依赖菊池花样精确测定电子束方向Ｂ和重位点阵持征参数ｌ／θ的两种方法。     

基于原子力显微镜的压痕模式和双模纳米力学模式在模量表征中的影响因素

原子力显微镜是表征材料微观力学性质的重要手段,本文基于原子力显微镜的压痕法和双模纳米力学法,探究薄膜/基底材料与多层二维材料杨氏模量测定过程中的影响因素,分析了基底硬度、二维材料厚度以及环境湿度对两种纳米力学表征结果的影响,为研究适用于纳米材料微观力学的测定提供参考.     

基于二维标量衍射的液晶光束偏转性能仿真

液晶空间光调制器(LCSLM)可用于光束偏转,针对一维衍射解析理论分析液晶光束偏转时仅能考虑衍射效率的问题,严格分析二维标量衍射数值方法的采样要求和算法实现,对液晶器件的相位调制级数和非线性进行建模,计算圆形光斑经过液晶器件和聚焦透镜后的光斑空间分布。仿真分析各种条件下液晶器件的衍射效率和偏转精度,得出不同偏转角度时相位调制级数与偏转精度和衍射效率的关系,为液晶器件的选择提供了依据。利用BNS256×256向列液晶构建光束偏转实验,同时也根据实验参数仿真分析不同偏转角度对应的偏转精度和衍射效率,实验结果与仿真基本吻合,表明二维标量衍射分析可用于液晶偏转器件的工程性能评估。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.