基于基片集成同轴线的双馈点圆极化天线

提出了一种采用基片集成同轴线(SICL)馈电的双馈点圆极化微带贴片天线。具体通过多馈点法实现圆极化,并通过背腔加载提高增益,增加带宽,减小后瓣,降低互耦,提高天线性能。经过仿真验证,该天线能够在42.42~56.69 GHz之间实现S₁₁<-10 dB(相对带宽为28.8%@51 GHz),在45.26~48.08 GHz之间实现轴比小于3 dB,最大增益8.9 dBi。     

THz无线通信系统高定向光学发射器性能分析

为提高太赫兹无线通信系统的传输距离,设计了带有高增益天线和波导输出光电二极管模块的光学发射器.分析了含有HEMT和不含HEMT的WG-PM输出功率与光电流、输出功率与信号频率的关系,对比了四种光学发射器的BER特性,理论计算了发射器的最大传输距离.分析结果显示:该WG-PM在120GHz时的3dB带宽大于16GHz,采用此发射器的无线通信系统传输距离可达到500m.     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

一种共面带状线馈电的圆极化双频微带天线

提出一种工作于2.4GHz（圆极化）和5.8GHz（线极化）的双频微带天线,由共面带状线（CPS）馈电。在菱形环中内嵌小方环实现双频工作,菱形环上槽口实现圆极化特性,背面加反射板以提高天线增益。为了实测天线性能和应用于不平衡馈电方式,还设计了CPS至微带线的巴伦。实测结果与仿真结果比较吻合,在2.4GHz与5.8GHz的S11〈-10dB工作带宽分别为33.3%和17.4%,增益分别达到9.05dBi和6.59dBi,2.4GHz频点3dB轴比带宽为15.8%。该天线频带宽、增益高、结构简单、易于集成,可用于无线通信和微波输能系统的整流天线中。     

脊波导缝隙圆极化天线的设计*

设计了一种新型脊波导缝隙圆极化天线。在脊波导宽边开并联纵缝,从波导耦合电磁波至其上方的四脊波导圆极化器,实现圆极化辐射。采用脊波导不仅减小了单元尺寸,更改善了天线的带宽性能。重点研究了四脊波导圆极化器对相互垂直的两辐射场分量的影响,优化单元的轴比特性。在提取单元谐振电导的基础上,设计了工作在10GHz 的1×10 圆极化波导缝隙阵列。对天线实物测试得到中心频率处的增益为16.8dB,第一副瓣电平为 25dB,阻抗带宽约为8.5%,相对轴比带宽(AR臆3dB)约为3.2%。     

基于环形极子的太赫兹超宽带圆极化阵列天线

以方环单极子天线为基础,设计了一种太赫兹频段超宽带圆极化微带阵列天线。提出的新型低剖面环形天线单元由C型结构和改进后的接地结构组成,实现了天线表面电流不对称流动以及电流的最优纵横比,辐射圆极化波;采用2×4天线阵列不仅提高了天线增益,而且增强了其方向特性。仿真结果表明,该阵列天线的阻抗带宽为67.42%(193.86~391.02 GHz),圆极化轴比带宽可完全包含该频段,且在该频段内峰值增益为15 dBi,在太赫兹通信设备中具有广阔的应用前景。     

一种非谐振宽带高增益部分反射面天线

介绍一种非谐振的宽带高增益部分反射面天线。该天线由一个线-圆极化转换超表面、一个宽带耦合馈电天线和金属地组成。部分反射面和金属地板构成的腔体处于非谐振状态,通过旋转部分反射面上层的圆极化贴片对泄露的电磁波进行相位校正,可实现高增益和宽带圆极化的性能。仿真结果表明,天线3 dB轴比带宽和3 dB增益带宽分别为10.37～13.52 GHz(26.37%),11.21～12.99 GHz(14.71%),同时,天线在12.4 GHz实现20.23 dBic的峰值增益,口径效率为34.11%。     

宽带高增益圆极化天线

设计了一种宽带高增益圆极化天线。天线采用双同轴线激励以及威尔金森功分器和90°相位比较器的馈电网络形式实现了天线的宽带圆极化特性。该馈电网络形式能在较宽的频带范围内保持稳定的幅度和相位。通过在蝶形天线外围引入方形环,增加了天线的有效辐射面积,从而显著提高了天线的增益。测试结果显示,该圆极化天线VSWR<1.5的阻抗带宽达到63.6%,3 dB轴比带宽达到66.7%,且在1.1~1.6 GHz频段范围内,右旋圆极化增益＞9.4 dB。     

一种双频双圆极化共面波导馈电缝隙天线

一种新型加载两个开口环形接地导带的双频共面波导（CPW）馈电缝隙天线,被提出来实现双旋向圆极化辐射。从天线信号带伸入槽隙的水平矩形调谐短截线用于改善频带内的阻抗和轴比。对天线进行仿真和实物测量。实验结果表明,该天线的10 dB 回波损耗阻抗带宽分别是,在1.55 GHz 频段为27.69％（1.4~1.85 GHz）,在2.55 GHz频段为26.17％（2.075~2.7 GHz）。在1.55 GHz的频段和2.55 GHz频段所测量的3 dB轴比带宽分别是20.51％（1.4~1.72 GHz）和13.44％（2.36~2.7 GHz）。其辐射极化方向分别是低频段右旋圆极化和高频段左旋圆极化,天线在两频段内的峰值增益分别是3.69 dB和3.81 dB。实物测试结果与仿真结果基本吻合。     

一种宽带高增益太赫兹透镜天线及其组阵设计

给出了一种宽带高增益的太赫兹介质透镜天线的设计方法，该太赫兹透镜的中心工作频率为220 GHz,工作带宽超过20 GHz,透镜外形为边长118 mm的方形。太赫兹透镜采用平凸透镜形式，透镜材料选用低损耗的氧化铝陶瓷，介质透镜前后表面带有阻抗匹配层，起到减小空气-介质交界面电磁波反射的作用。综合采用上述3种设计手段的太赫兹透镜天线实现了高增益和高效率。在太赫兹透镜天线容差分析的基础上，加工了太赫兹馈源网络和透镜样机，并进行了实物测试。实测太赫兹馈源网络的驻波、极化隔离度、天线增益和天线方向图均与仿真较为接近。进一步，将该阵列单元用于组阵以继续提高太赫兹天线增益，给出了周期组阵和非周期组阵2种布阵设计。计算结果表明，通过非周期组阵设计的透镜阵列天线，可以将栅瓣电平由-8.38 dB抑制到-13.69 dB。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.