基于无掩模腐蚀技术的高性能微加速度传感器

针对深沟槽内结构制作困难的问题,基于单晶硅各向异性腐蚀原理,推导了[100]单晶硅在KOH溶液中无掩模腐蚀过程台阶宽度与无掩模腐蚀深度之间的解析表达式,通过工艺实验确定了单晶硅[311]面与[100]面的腐蚀速率比;采用适合于三明治微加速度传感器硅芯片制作的无掩模腐蚀成型工艺流程,实现了深沟槽内悬臂梁的准确成型,研制出一种±100gn量程的微加速度传感器.样品测试表明:运用无掩模腐蚀技术制作的微加速度传感器相对精度优于6 ×10-5,灵敏度为17.78 mV/gn.     

用<111>硅的自停止腐蚀方法制作硅膜

利用各向异性腐蚀和键合工艺,提出了一种新的自停止腐蚀方法,该方法可以得到大于1μm厚的均匀硅膜,可用于微传感器研制。     

硅在KOH 溶液和EPW 中 各向异性腐蚀的异同

本文在文献(1~5)的基础上,进一步应用碰撞理论研究了硅在KOH溶液和EPW中各向异性腐蚀的机理,并给出了硅在这两种腐蚀液中各向异性腐蚀速率的实验结果.     

微创手术式硅微机械加工（MISSM）技术

介绍了一种新颖的微创手术式硅微机械加工(MISSM)技术,该技术充分利用(111)硅片的晶向分布和各向异性湿法腐蚀的特性。通过在单晶硅片表面制作一系列微型释放窗口来定义结构的轮廓及尺寸,实现在单晶硅片内部选择性可自停止腐蚀技术,制作出不同结构尺寸的腔体。同时,结合不同器件结构设计的需求,缝合微型释放窗口并进行后续工艺制作及最终可动结构释放。该技术采用微创手术式单硅片单面体硅工艺替代传统的表面微机械工艺,制作工艺简单,既具有单硅片单面加工的优势又便于与IC工艺兼容。文章详细讲述了微创手术式三维微机械结构的成型机理和工艺流程,并针对其关键技术进行了系统的分析,取得了令人满意的结果。     

基于金硅腐蚀自停止技术的亚微米梁制作研究

提出了利用无电极电化学腐蚀自停止技术制作亚微米梁结构的新工艺方法。根据金硅腐蚀自停止现象发生的条件,结合硅材料的各向异性腐蚀特性,设计器件结构,利用腐蚀暴露面积变化实现了硅的选择性自停止腐蚀。在(111)型硅片上利用原电池钝化效应一次性腐蚀出与衬底绝缘,由约4μm厚的金电极支撑,厚度约为235 nm的亚微米梁结构,具有制作简单、成品率高、成本低等特点,应用前景广阔。     

几种基于MEMS的纳米梁制作方法研究

特征尺度在纳米量级的梁结构是多种纳机电器件的基本结构.提出了几种基于MEMS技术的纳米梁制作方法,通过利用MEMS技术中材料与工艺的特性实现单晶硅纳米梁的制作.在普通(111)硅片上,利用各向异性湿法腐蚀对(111)面腐蚀速率极低的特性,通过干法与湿法腐蚀相结合制成厚度在100 nm以下的纳米梁.该方法不使用SOI硅片,有效控制了成本.在(100)SOI硅片上,通过氧化减薄的方法得到厚度在100 nm以下的多种纳米梁,由于热氧化的精度高,一致性好,该方法重复性与一致性均较好.在(110)SOI硅片上,利用硅的各向异性腐蚀特性以及(110)硅片的晶向特点,制作宽度在100 nm以下的纳米梁,梁的两个侧面是(111)面.     

电化学选择性刻蚀Cu/Ni牺牲层技术的研究

牺牲层腐蚀技术结合MEMS技术是制作三维可动微机构的一个重要加工手段。采用电位控制的电化学释放牺牲层技术,对2种不同刻蚀液下的Cu/Ni叠层结构分别进行了电化学腐蚀,并测量了其伏安特性,结果表明:电位控制的电化学腐蚀能很好地进行有选择性刻蚀Cu/Ni牺牲层。     

基于磁阻传感器的无线车辆检测器的设计

根据车辆经过会引起地磁场扰动这一现象,应用各向异性磁阻传感器并结合Zig Bee技术,设计了一种无线车辆检测器。阐述了车辆检测原理,设计制作了实验样机。道路实测实验表明:该设计能够判断车辆的有无、行进方向,并可以进行车速估计,具有一定的准确性和实用性。     

用于承载铷原子钟滤光泡的高品质微腔体制备

在芯片级铷原子钟中,需要微腔体来承载Rb—87滤光泡,为此,提出了一种用于制作高品质微腔体的新技术。为了获得光滑的腔体侧面和避免腐蚀过程中凸角处产生削角现象,研究中采用了超声腐蚀技术和凸角补偿技术。首先,分别在纯KOH溶液,并结合搅拌和超声等方法,对(100)硅片进行湿法腐蚀,并运用激光共聚焦扫描显微镜对腐蚀后的{111}表面进行粗糙度测量,表明运用超声腐蚀技术可以获得光滑的{111}腔体侧面。在此基础上,引入条形掩模凸角补偿方法进行微腔体腐蚀。实验结果表明:在80℃、质量分数为30%KOH、超声频率和功率分别为59 kHz和160 W的溶液中腐蚀,其{111}腐蚀表面粗糙度为0.117μm,同时条形的长度取1200μm时,可以获得平滑规整的微腔体。     

高灵敏度谐振式微加速度传感器的设计与制作

为提高加速度传感器灵敏度,提出一种新的加速度敏感机制,并基于此原理设计了一种新的微机械谐振式加速度传感器结构.分析了加速度传感器的数学模型及影响灵敏度的关键参数,并以此为依据对传感器结构参数进行优化设计.采用扩散硅层作为谐振子,提高器件性能的同时简化了制作工艺,利用KOH溶液湿法腐蚀硅在各晶向上的各向异性,实现了支撑梁...     

双E 型硅加速度传感器的研制􀀁

本文在简要介绍了,利用硅的各向异性腐蚀工艺研制的,双E非整体弹性膜式硅芯片结构的同时,又较详细的报告了,用此芯片封装成的硅加速度敏感元件及硅加速度传感器结构,最后介绍这种加速度传感器的优良性能。     

双E形结构硅压力传感器的研制

介绍利用硅的各向异性腐蚀工艺腐蚀出的一种双E形结构非整体结构弹性膜硅芯片及用此芯片封装成的压力敏感元件。借助于这种硅芯片与不同厚度的封孔膜结合 ,制成了灵敏度和量程范围各不相同的性能优良的压力传感器     

Fabrication of a micro-tip array mold using a micro-lens mask with proximity printing

In this study, a mold for a micro-tip array is fabricated using a microlens array mask with proximity exposure. The micro-tip array uses a microlens array mask with geometrical optics. Light passing through a microlens is focused at the focal points. There is microlens on the mask and the pattern that results from the light passing through the mask is directly projected onto the photoresist surface. A concave profile is developed using a positive photoresist and the remaining photoresist microstructures are formed after the development process. By changing the distance between the mask and the photoresist and the radius of curvature of the microlens, various tip shapes can be fabricated. The exposure gap is calculated using the microlens array mask and the geometry of the mold of micro-tip array is established using the irradiance absorption maps for the different levels. These methods respectively use the model of the positive photoresist and optical software. When electroforming a metallic micro-tip copy of the patterned photoresist, masters are created. The metal micro-tip array is used membrane probe card.     

各向异性腐蚀技术研究与分析

本文详细分析了用各向异性腐蚀技术形成的压阻式压力传感器硅杯的几种腐蚀方法,根据实验提出了它们的优缺点,介绍了几种向异性蚀的自致停止法和腐蚀中削角的补偿方法,对制造微量程、高灵敏度的压力传感器有一定的指导意义。     

Fabrication of metallic microstructures by electroplating usingdeep-etched silicon molds

A new technology is presented here to fabricate three-dimensional micromachined metal structures. The microstructures are manufactured by electroplating in deep-etched silicon structures followed by a separation from their mold. Up to 140-μm-deep silicon structures with vertical sidewalls are realized by an anisotropic plasma etching process producing the mold for electroplating. An etching gas mixture of SF_6s and CBrF₃ is used to achieve both an anisotropic etching behavior by protective film formation of CF₂ -radicals and high etching rates. The anisotropy is due to photoresist masking, which enhances the polymer formation. The vertical trenches are electroplated from the trench base filling the structures uniformly to the substrate surface. By avoiding overplating across the whole substrate the resulting structures are suitable for micromechanical devices. If needed, released microstructures from the silicon mold can be obtained by direct lift-off     

微机械加工技术-硅的各向异性刻蚀

简要介绍了在强碱溶液中硅的各向异性刻蚀性质和凸角补偿技术。     

An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon

This paper reports on a practical modification of the two-step time-multiplexed plasma etching recipe (also known as the Bosch process) to achieve high aspect-ratio sub-micron wide trenches in silicon. Mixed argon and oxygen plasma depassivation steps are introduced in between the passivation and etching phases to promote the anisotropic removal of the passivation layer at the base of the trench. Argon does not chemically react with polymers and silicon and removes the passivation layer only by physical sputtering. Therefore, it results in a highly anisotropic polymer etching process. This recipe can be easily integrated on conventional ICP equipment and the scalloping on the trench sidewall can potentially be reduced in size to less than 50 nm. To clean up all the passivation residues, a short oxygen plasma step is also added at the end of the cycle that effectively improves the uniformity of the etching profile over various opening sizes. Excellent anisotropy of the inserted argon depassivation step facilitates narrow trenches down to 130 nm wide and gap aspect-ratios as high as 40:1, extending the application of deep reactive ion etching (DRIE) processes into a new broad regime.     

改进的硅各向异性腐蚀GPU并行模拟

硅各向异性腐蚀过程复杂,采用元胞自动机模拟硅各向异性腐蚀非常耗时。为了加速腐蚀模拟过程,研究了基于图形处理器(GPU)进行硅的各向异性腐蚀模拟。针对串行算法直接并行化方法存在加速效率低等问题,提出了一个改进的并行模拟方法。该方法增加了并行部分的负载,减少了内存管理的开销,从而提高了加速性能。实验证明该方法能够获得较理想的加速比。     

Micromachining process simulation using a continuous cellularautomata method

In this paper, we present results on the development of an anisotropic crystalline etching simulation (AGES) program based on a continuous cellular automata (CA) model. The program provides improved spatial resolution and accuracy compared with the conventional and stochastic CA methods. Implementation of a three-dimensional (3-D) dynamic CA technique provides increased simulation speed and reduced memory requirement. The first AGES software based on common personal computer platforms has been realized for simulation of micromachining processes and visualizing results in 3-D space. The software is uniquely capable of simulating the resultant profile following a series of micromachining steps, including surface passivation, reactive ion etching, as well as wet chemical bulk etching. A novel method for accurately obtaining the etch-rate diagram of anisotropic etching using both experimental and numerical techniques has been developed