恒带宽窄带集总跳频滤波器的理论计算与实现

为了快速准确地设计并制作恒带宽窄带集总跳频滤波器,提出了一种随频率变化而变化的负载结构.通过对这种结构模型的分析,得到了其关于频率和相对带宽的精确变换公式,利用麦夸特优化法对其进行优化计算,快速得到该负载结构各部件的最优值.最后利用该方法设计并制作了一个二阶集总带通滤波器.实验结果表明,该方法实现滤波器比传统手调快几倍...     

基于有向超图的工作流资源分配均衡优化方法

为了拓展工作流资源分配均衡优化的深度和广度,提出了一种考虑过程支持资源变化与过程结构变化相互影响的优化方法.通过对过程进行扩展超图建模,利用超图的性质以及活动能力需求集与支持资源能力集之间的耦合,给出了过程结构随支持资源变化而变化的形式化处理规则;给出了由不同结构过程构成的、用于工作流资源分配均衡优化超图模型(DHM-WRAB)的建模规则,使工作流资源分配均衡优化转化为具有权因子的超图最短路径求解问题,并给出求解过程;最后,通过举例证明该方法可行、有效.     

双层EBG结构的优化设计

研究了一种新型的双层电磁带隙(EBG)结构,该结构在金属导带上刻蚀蝶形单元,在接地板上刻蚀圆环孔,并运用粒子群优化算法(PSO)与高频电磁仿真软件(HFSS)相结合的方法对接地板刻蚀圆孔进行优化,使结构的传输特性更好.在优化过程中,首先对圆孔的外径进行优化,然后在此基础上再优化内径,通过仿真计算结果可看出,优化后-10 dB的相对带宽和阻带的衰减值分别增加了22.69％和15.26％,通带波纹减小了76.76％.优化后结构的频率特性较好,优化效果理想.     

一种基于Kriging模型和受限差分进化的电磁结构快速优化算法

进化算法在各类电磁结构优化设计中有着广泛的应用，但由于需要在参数空间中进行随机搜索并仿真试探，优化效率普遍较低.针对这一问题，提出受限差分进化（Differential Evolution，DE）算法与Kriging代理模型相结合的电磁结构快速优化算法.算法根据参考设计结果建立圆柱管道空间，通过参数变换将进化区域限制在管道内部.Kriging模型学习管道内样本及其仿真数据，代替电磁仿真快速预测进化产生下一代种群的响应.相比整个参数空间，该算法DE寻优和Kriging学习的区域被显著减小，优化效率得到提升.通过一个波导双孔定向耦合器的优化设计，表明该方法的求解质量和收敛速度优于现有算法.     

Analysis and Design of a ΔΣ Modulator for Fractional-N Frequency Synthesis

提出了一种适用于分数分频锁相环频率综合器的全数字噪声整型 ΔΣ调制器电路结构新的设计方法,并将其最终实现. 采用了流水线技术和新的CST算法优化多位输入加法器结构，从而降低了整体的复杂度和功耗. 这种电路结构通过了Matlab的行为级仿真，ASIC全定制实现并流片，该结构也通过VHDL综合实现验证，最后给出的测试结果表明该电路具有良好的性能，可应用于单片千兆赫兹级低功耗CMOS频率综合器中.     

ΔΣ调制器在分数分频频率综合器中的分析与设计(英文)

提出了一种适用于分数分频锁相环频率综合器的全数字噪声整型ΔΣ调制器电路结构新的设计方法,并将其最终实现.采用了流水线技术和新的CST算法优化多位输入加法器结构,从而降低了整体的复杂度和功耗.这种电路结构通过了Matlab的行为级仿真,ASIC全定制实现并流片,该结构也通过VHDL综合实现验证,最后给出的测试结果表明该电路具有良好的性能,可应用于单片千兆赫兹级低功耗CMOS频率综合器中.     

△∑调制器在分数分频频率综合器中的分析与设计

提出了一种适用于分数分频锁相环频率综合器的全数字噪声整型△∑调制器电路结构新的设计方法,并将其最终实现.采用了流水线技术和新的CST算法优化多位输入加法器结构,从而降低了整体的复杂度和功耗.这种电路结构通过了Matlab的行为级仿真,ASIC全定制实现并流片,该结构也通过VHDL综合实现验证,最后给出的测试结果表明该电路具有良好的性能,可应用于单片千兆赫兹级低功耗CMOS频率综合器中.     

基于改进模拟退火算法的PCB电子元器件热优化布置研究

为了解决PCB板上电子元器件温度过高的问题,文中基于模拟退火算法介绍了一种PCB电子元器件优化布置的方法.该方法在传统优化方法的基础上进行改进,依次对二维阵列式布置模型和元器件选位进行优化.文中对该方法的建模及优化过程进行分析,并给出了具体的优化案例.通过在热仿真软件Icepak平台将该方法与传统优化方法进行对比,对于...     

△∑调制器在分数分频频率综合器中的分析与设计

提出了一种适用于分数分频锁相环频率综合器的全数字噪声整型△∑调制器电路结构新的设计方法,并将其最终实现.采用了流水线技术和新的CST算法优化多位输入加法器结构,从而降低了整体的复杂度和功耗.这种电路结构通过了Matlab的行为级仿真,ASIC全定制实现并流片,该结构也通过VHDL综合实现验证,最后给出的测试结果表明该电路具有良好的性能,可应用于单片千兆赫兹级低功耗CMOS频率综合器中.     

MEMS压阻超声传感器的设计与优化

提出了一种新的压阻式超声传感器结构,该结构由主振梁和微传感梁组成,在声压的作用下,主振梁振动从而带动微传感梁的振动.通过有限元软件Ansys仿真分析该结构的灵敏度,并与悬臂梁结构压阻式声传感器相比,结果表明灵敏度有了一定的提高.为了实现结构的优化,仿真了结构的尺寸与共振频率的关系,对相同共振频率的结构进行了静力分析,计算并对比了不同尺寸结构的灵敏度,从而得到灵敏度最高的结构,实现了结构的优化.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.