可配置的TFT-LCD控制器IP核的设计

设计实现了一种基于Avalon总线的,显示分辨率和像素深度均可配置的TFT-LCD控制器IP核.根据自顶向下的设计思想,将IP 核进行层次功能划分设计,采用Verilog 硬件描述语言实现该控制器以及它的外围逻辑时序的全部功能.并对IP 核进行仿真验证,最后加入到Nios II系统中,该IP 核经测试效果良好.     

一种多通道ARINC429总线协议IP核的设计与实现

设计了基于FPGA的ARINC429总线协议IP核.给出了IP核的总体设计及工作原理.在设计时采用功能模块的方法,分别设计数据协议处理模块、缓冲模块、定时模块等部分.充分利用同步时钟方法,提高了可靠性,有效解决了数据间干扰和亚稳态问题.经验证表明IP核的功能符合设计要求.最后经过物理验证,能够正确实现收发功能,且满足特定场合的应用.     

HDMI CEC的设计与实现

基于FPGA的设计流程,通过对HDMI CEC的协议分析,架构定义,RTL编写及功能仿真,到最后FPGA验证,结果表明,该设计能较好的满足功能和时序要求,也能作为一个IP核,方便地相关电子产品领域应用。     

以太网MAC层IP软核设计方法研究

主要论述了在SOC产品开发中如何设计以太网MAC层IP软核.针对目前以太网MAC层IP软核设计的实际情况,分析了三种常用的IP软核设计方法的优缺点,提出了一种改进的U型IP软核设计方法.并运用此方法先对以太网MAC层IP软核进行层次化的自顶而下设计,再对其进行自底而上地实现与集成,最后得到该IP软核整体.经过对该软核的测试与结果分析,验证了其能够实现以太网MAC层协议功能,达到了设计目标.该研究将对今后的以太网MAC层IP软核及相关产品开发具有重要的参考价值.     

一种嵌入式USB2.0主机控制器IP核的研究与设计

用硬件描述语言verilog HDL设计实现了一种嵌入武USB2.0主机控制器IP核,简要介绍了嵌入武USB主机设计背景,重点描述了USB主机控制器IP核的结构划分和各模块的设计分析,最后给出了nc-verilog功能仿真方案以及FPGA验证方案.通过nc-verilog功能仿真及FPGA验证表明,此lP核可以作为一个独立模块应用到嵌入式系统中.     

一种小规模LCD驱动电路IP核的设计

介绍一种全新LCD驱动电路IP核的总体设计。该IP核具有优异的移植性,能使LCD驱动电路的规模可调,而且通过微调就能驱动多数小规模LCD。采用自顶向下的设计方法将其按功能划分为几个主要模块,并分别介绍各个模块的功能。用VHDL语言对LCD驱动电路IP核进行描述,并用FPGA进行系统实现,最后通过仿真验证。     

PCI Express协议实现与验证

称为第3代I/O接口技术的PCI Express总线规范的出现,从结构上解决了带宽不足的问题,有着极为广阔的发展前景。基于Verilog HDL硬件描述语言及可综合化设计理念,完成了PCI Express IP核RTL代码的设计。IP核代码使用Verilog HDL语言编写,分模块、分层次地设计了事务层、数据链路层和物理层的逻辑子层,并进行了可综合化设计与代码风格检查。对设计的PCI Express IP核的功能分别从协议层次和应用层次进行了验证。具体实现上,采用Denali公司的PureSuite测试套件对IP核的协议兼容性进行验证,验证范围覆盖了IP核的3个层次以及配置空间,采用QuestaSim仿真工具对IP核的应用层进行验证。仿真结果表明,设计的PCI Express IP核工作正常,性能优良。     

基于IEEE 1500的嵌入式芯核外壳测试封装设计

由于IP芯核被嵌入到片上系统(SoC)后,无法直接对其输入输出引脚进行测试,传统的测试方法已不能满足IP核的测试需求。在对IEEE 1500 标准进行相关研究的基础上,分析了测试架构的结构功能及其相应的操作指令,对ITC’02基准测试电路中的h953芯片进行了外壳测试封装设计,并通过多种指令仿真验证了设计的正确性。     

ALTECC_DECODER IP核的IEEE 1500 Wrapper设计

IP核的广泛应用提高了电路集成的效率。由于众多功能各异的IP核集成在电路中,完善的测试机制是确保其正常工作的前提。因此,如何对IP核进行测试成为复用IP核技术必须解决的问题。IEEE Std 1500提供了IP核的测试实现机制,文中基于IEEE 1500研究如何实现IP核的Wrapper设计,实验以Hamming码译码IP核ALTECC_DECODER为测试对象,验证了IEEE 1500 Wrapper可有效地对IP核进行测试。     

基于BIST的编译码器IP核测试

介绍了用于IP核测试的内建自测试方法（BIST）和面向测试的IP核设计方法,指出基于IP核的系统芯片（SOC）的测试、验证以及相关性测试具有较大难度,传统的测试和验证方法均难以满足。以编译码器IP核为例,说明了基于BIST的编译码器IP核测试的基本实现原理和具体实现过程,通过加入测试外壳实现了对IP核的访问、隔离和控制,提高了IP核的可测性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.