HPT光谱分析及器件的最佳设计

利用一维扩散模型,较全面地分析了异质结光电晶体管(HPT)的光谱分布,并与实验结果进行了比较,二者基本吻合。同时首次报道了存在最佳集电区宽度,使光响应达到极大。最后利用我们的理论结果对 HPT 提出了最佳设计。     

高增益异质结光电晶体管的研制

利用液相外延技术研制出高增益InGaAsP/InP异质结光电晶体管(HPT)。入射光波长为1.256μm时,实现直流光增益为88.9,微分光增益为148,光谱响应范围为0.85～1.3μm。在外偏电压小于4V时暗电流小于10nA。     

RTD/HPT光控单-双稳转换逻辑单元

以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过一个临界值时,MOBILE的输出电压便会从高电平跳变到低电平;由HPT光增益理论分析了提高HPT性能的措施以及HPT设计中应该注意的问题;介绍了以Si光三极管代替HPT,通过模拟实验,验证了RTD/HPT光控MOBILE的逻辑功能。     

GexSi1—x／Si反型基区晶体管—实验测定

叙述了p沟道GexSi1-x/Si反型基区晶体管（BICFET）的制备，材料特性以及电特性，BICFET是最早采用先进的GexSi1-x/Si制作工艺的双极晶体管，其p 沟道的实现是极为理想的^[1－2]，目前，GexSi1-x/Si BICFET的特性受当前制备工艺限制，而不受其物理原理的限制，这里给出的电特性包括单极特性－－BICFET作为异质结FET，以及和双极特性－－作为期望的高特性工作模式，参考文献[3]中详细介绍了GexSi1-x/Si BICFET器件的特性和理论模型，本文给出的实验结果与理论研究相当一致。     

SiGe HBT的速度优化设计

从理论分析角度介绍了优化SiGe异质结晶体管速度的方法。结合双极晶体管的工艺限制，介绍了SiGeHBT的基本原理，讨论了SiGeHBT的发射区／基区／集电区设计。最后，以一个100GHzfmax和fT的HBT为例，对电路制作工艺参数进行了讨论。     

HPT型Ge量子点红外探测器

异质结光敏晶体管(HPT)是一种具有内部电流增益的光电探测器,且与异质结双极晶体管(HBT)的制作工艺完全兼容.利用超高真空化学气相淀积(UHV/CVD)方法在HBT晶体管的基区和集电区间加入多层Ge量子点材料作为光吸收区.TEM和DCXRD测试结果表明,生长的多层Ge量子点材料具有良好的晶体质量.为了提高HPT的发射...     

Si／SiGe／Si双异质结晶体管（HBT）物负阻特性

同质结硅双极晶体管在共射极状态下工作中,在高集电极－发射极电压、大电流下,由于热电正反馈,容易发生热击穿,这限制了晶体管的安全工作区域。本文报道了在大电流下,由于热电负反馈,重掺杂基区Si/SiGe/HBT出现了负阻特性,并对这一现象进行了新的解释,认为这是由于大电流下耗散功率增加,基区俄歇复合导致电流增益随温度增加而减小的结果。这一现象有利于改善大电流下双极晶体管的抗烧毁能力,证明Si/SiGe/HBT适于大功率应用。     

固态微波器件与电路的新进展

描述了固态微波器件与电路五个发展阶段,并重点就当前发展的InP HEMT、窄禁带材料HEMT和HBT、宽禁带材料MESFET和HEMT、RF CMOS、InP HBT、SiGe HBT、RF MEMS等七个领域的发展特点、2006年最新进展,以及未来发展趋势进行了介绍.并就我国发展固态微波器件与电路提出发展建议.     

掺Mn基区InGaAsP/InP双集电区异质光敏晶体管

为了用液相外延法制出高速、高增益异质光敏晶体管,采用了新型的双集电区结构,并且采用Mn作为p型掺杂剂,以代替常用的Zn或Cd制作p~+-n~-集电结.制出的台面型HPT的典型光增益为144;在 80 ps Gaussian光脉冲作用下,其输出脉冲上升时间为 400ps.半峰宽为1.2ns.     

Si/SiGe/Si双异质结晶体管(HBT)的负阻特性

同质结硅双极晶体管在共射极状态下工作中,在高集电极--发射极电压、大电流下,由于热电正反馈,容易发生热击穿,这限制了晶体管的安全工作区域.本文报道了在大电流下,由于热电负反馈,重掺杂基区Si/SiGe/HBT出现了负阻特性,并对这一现象进行了新的解释,认为这是由于大电流下耗散功率增加,基区俄歇复合导致电流增益随温度增加而减小的结果.这一现象有利于改善大电流下双极晶体管的抗烧毁能力,证明Si/SiGe/HBT适于大功率应用.     

Ultra-wideband monolithic photoreceivers using HBT-compatible HPTswith novel base circuits, and simultaneously integrated with an HBTamplifier

This paper presents two kinds of monolithically integrated ultra-wideband photoreceivers that use HBT-compatible HPTs with novel base circuits. The HPT photoreceiver, which consists of an HPT with an inductor and series resistor base circuit, yields ultra-broadband operation with 3 dB bandwidth from 0.43-12.1 GHz and over 11 dB gain compared to a photodiode with identical quantum efficiency. The HPT/HBT photoreceiver, which consists of an HPT with an inductor at the base terminal followed by an HBT amplifier circuit, yields ultra-wideband operation from 8.5-20.5 GHz (bandwidth of 12 GHz) with over 20 dB gain. The bandwidths of these photoreceivers are state-of-the art for monolithically integrated photoreceivers using HPT/HBT structures. The proposed photoreceivers, which are based on mature MMIC technologies, offer several other remarkable features such as good design accuracy and extremely small chip size     

Optical characteristics of InGaP/GaAs HPTs

In this paper, we examined the optical characteristics of InGaP/GaAs heterojunction phototransistor (HPT) directly compared with AlGaAs/GaAs HPT for the first time. Because of its inherent good electrical properties, the InGaP/GaAs HPT produced a high optical gain of about 61 at V_C=3 V, I_B=2 μA, for an input optical power of 1.23 μW. This is 2.5 times as high as that of the AlGaAs/GaAs HPT. In the transient response, the InGaP/GaAs HPT was a little inferior to the AlGaAs/GaAs HPT. This is due to the longer time delay caused by the photo-generated hole accumulation at the interface of heterojunction. The extended response time can be overcome by using a small load resistance in conjunction with the advantage of the superior optical gain     

新型材料盖板在铝电解电容器中的应用

通过 HPT高温增强塑料板材盖板与低氯酚醛纸板材盖板的性能比较及制成铝电解电容器的产品试验 ,表明国产 HPT高温增强塑料板材盖板完全可以替代进口板材盖板 ,制造优质、宽温、高压铝电解电容器     

A Hybrid Nanovector of Suicide Gene Engineered Lentivirus Coated with Bioreducible Polyaminoglycosides for Enhancing Therapeutic Efficacy against Glioma

An emerging hybrid nanovector integrating the merits of both viral and nonviral vectors has attracted much attention as the next generation of promising gene vectors to overcome the primary challenge of cancer gene therapy. Due to its inherent advantages, lentivirus (Lv) has been increasingly applied and investigated in medical fields. Herein, a new hybrid nanovector (SS‐HPT/Lv) composed of the Lv core and reduction‐responsive hyperbranched polyaminoglycoside (SS‐HPT) shell is designed via electrostatic interaction. In comparison with polybrene (commercial enhanced transfection reagent), SS‐HPT endows the hybrid nanovector with better biosafety. Furthermore, both the appropriate nanoparticle sizes and positive surface potentials contribute to the endocytosis and rescue of SS‐HPT/Lv from endocytic vesicles. Regarding therapeutic application, lentiviral vector acquires permanent transgene expression with the capability of integrating to the host chromosome, and SS‐HPT/Lv exhibits an improved transduction efficacy. The cytosine deaminase/5‐fluorocytosine suicide gene therapy system mediated by SS‐HPT/Lv performs an enhanced antitumor efficiency and extends the survival time of glioma‐bearing rats. Such a hybrid nanovector strategy would open a new avenue to the development of gene vectors for treating malignant cancers.     

MEXTRAM modeling of Si-SiGe HPTs

The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.     

Optical tristable device by vertical and direct integration ofheterojunction phototransistors and laser diodes

A light-controlled optical tristable device with an optical gain is actualized. The device has a configuration of vertical and direct integration of two heterojunction phototransistors (HPTs) on a laser diode (LD) along the cavity direction. An external optical input causes a bistable operation in one HPT+LD part. With the optical connection between two HPTs through the LD stripe, a bistable operation also occurs in the other HPT+LD part. The light-controlled optical tristability is achieved with the combination of the bistable operation in each HPT+LD part     

Integration of InGaAsP/InP optoelectronic bistable switches with afunction of optical erasing

An OE-PPM (optically erasable photonic parallel memory) that is an array of 10×10 optoelectronic bistable switches with an optical set and reset function has been fabricated successfully, and set and reset operation with light signals has been demonstrated. The switch consists of a heterojunction phototransistor (HPT) and a light-emitting diode (LED), and the reset operation is performed by an additional reset HPT. The minimum reset power is 1.6 μW at a bias voltage of 0.9 V, and the set power and the dissipation current at the same bias condition are 3.4 μW and 200 μA, respectively. These values are thought to be low enough for array operation. A light pulse with a width of 10 ns was able to set or reset the switch, though the set and reset powers were increased to 547 and 406 μW, respectively. The dominant factor that limits the speed of set and reset operation is thought to be the response time of the HPT     

High-speed InP-InGaAs heterojunction phototransistors employing anonalloyed electrode metal as a reflector

High-speed InP-InGaAs heterojunction phototransistors (HPT's) with a base terminal (three-terminal HPT's) have been fabricated. These HPT's have nonalloyed electrodes functioning as reflectors and a configuration in which light is incident through the substrate. These features lead to an increase in quantum efficiency in spite of the thin base and collector light-absorbing layers. Optical gain dependence on collector current is weak because of the low recombination current at the emitter-base interface. Maximum optical-gain cutoff frequencies of 22 and 14 GHz are obtained for a 3×3-μm² emitter HPT illuminated by 1.3- and 1.55-μm light, respectively. This HPT has the capability of operating as a high-speed heterojunction bipolar transistor (HBT) as well. A current-gain cutoff frequency (f_T) of 128 GHz is obtained for a 3×9-μm² emitter HBT fabricated on the same wafer. Equivalent circuit analysis, in which all the components are determined by measuring both the electrical and optical characteristics of a three-terminal HPT, shows good agreement with experimental results     

High-current InGaAsP-InP phototransistors and some monolithic optical devices

High-gain InGaAsP/InP heterojunction phototransistors (HPT's) have been fabricated by a liquid-phase epitaxial (LPE) technique. A collector current as high as 170 mA has been achieved at a 2-V bias and a 155-µW incident-light power. The optical gain is 1180. A monolithic optical device has been constructed in a InGaAsP/InP system which includes the HPT and a double heterojunction (DH) light-emitting diode (LED). The monolithic optical device is designable as an optical switching and an optical bistable or a light amplification device by controlling positive feedback between the HPT and the LED. A light amplification system comprised of a discrete InGaAsP/InP laser diode and a high-current HPT, has exhibited incoherent-coherent conversion with a positive amplification.     

InGaAsP/InP optoelectronic exclusive-OR (XOR) gate operating with optical inputs and outputs

An optoelectronic exclusive-OR (XOR) gate operating with optical inputs and outputs was fabricated. The gate is based on an optoelectronic bistable switch consisting of a light emitting diode (LED) and a heterojunction phototransistor (HPT). The inverter function indispensable for the XOR logic is attained optically by connecting an additional HPT to the bistable switch in parallel. Successful operation of the XOR logic was demonstrated.<>