基于超像素分割的深度图像修复算法

为了提高Kinect相机获取的深度图质量,提出了一种基于超像素分割的图像修复算法。 首先对深度图和彩色图分别 进行双边滤波和超像素分割;其次,结合深度图像和彩色图像相似性,记录彩色分割块的位 置,并对应于 深度图中;最后,在每个分割块对应深度区域中,根据丢失像素点在分割块中所占比例,划 分为无空洞区 域、小空洞区域、大空洞区域和全空洞区域4类。采用快速行进算法对小空洞区域进行 修复,利用中 值填补算法进行大空洞区域修复,对全空洞区域利用邻域区间对应彩色图像相似性进行填充 。4种类型中 的无空洞区域无需修复。实验结果表明,本文方法与FMM、Shen和Scheming的方法相比, 平均均方根误差(RMSE) 分别降低了2.958、0.822和0.078,修复 的主观质量也有所提高。     

基于类标号的快速RSST图像分割方法

给出了一种基于类标号的快速回归最短生成树(RSST)图像分割方法.在传统RSST方法基础上,将区域相似性度量由像素域距离改进为类标号距离;通过定义类标号距离,可增加类标号图对应的加权图中权重为0的边所占比例,减少了传统方法中的区域合并次数,因此能较多的减少分割用时.方法已在微机上进行了模拟,结果表明,在相同分割数目和相当的分割效果情况下,分割用时明显减少.改进方法更适用于图像的实时分析和处理.     

基于深度调制的超像素分割和显著性检测

提出了一种基于深度调制的超像素分割和视觉显著性检测方法。对于一对匹配的纹理和深度图,该方法首先对深度图像进行超像素计算,然后借助纹理和深度信息对超像素结果进行融合,完成对图像的超像素分割,最后对分割区域进行纹理和空间的全局对比,从而产生全分辨率的显著性图。实验证明,该方法简单、高效,所得显著性检测结果具有更高的精度,明显优于现有的视觉显著性检测方法。     

基于Kinect的虚拟视点生成技术

传统的多视点生成方法是基于多相机阵列系统的关键技术。现提出了基于Kinect的多视点成像计算方法。首先对Kinect的深度图使用三边滤波器进行平滑,根据修复好的深度图配合彩色图,利用DIBR技术生成多个存在空缺信息的彩色视点;最后结合彩色图的纹理结构信息和深度图的背景信息对有丢失信息的彩色图进行修复。实验结果表明,文中提出的深度修复方法能够有效地修补Kinect的深度图,生成的虚拟视点图在3DTV上效果明显,立体视觉效果显著。     

基于Kinect的虚拟视点生成技术

传统的多视点生成方法是基于多相机阵列系统的关键技术。现提出了基于Kinect的多视点成像计算方法。首先对Kinect的深度图使用三边滤波器进行平滑,根据修复好的深度图配合彩色图,利用DIBR技术生成多个存在空缺信息的彩色视点;最后结合彩色图的纹理结构信息和深度图的背景信息对有丢失信息的彩色图进行修复。实验结果表明,文中提出的深度修复方法能够有效地修补Kinect的深度图,生成的虚拟视点图在3DTV上效果明显,立体视觉效果显著。     

基于纹理平滑度的视点合成失真优化快速算法

针对3D-HEVC中深度图编码采用的视点合成失真优化方法的高复杂度问题,提出一种基于纹理平滑度的快速算法。首先结合帧内DC预测特性和统计学方法分析平坦纹理图中像素规律并设定基于纹理图平坦度的跳过准则;然后在深度图编码采用视点合成失真优化方法时提前分离出纹理图平坦区域所对应的深度图区域,并终止该区域像素基于虚拟视点合成的视点合成失真计算过程。实验结果证明该算法的有效性,能在保持编码质量的同时减少大量编码时间。     

基于改进的测地线距离变换的深度图像恢复

深度图像在三维(3D)立体视觉中被广泛应用。文中提出了一种新的基于改进的测地线距离变换的深度图像恢复方法。首先利用高质量的彩色图和低质量的深度图,根据测地线距离的定义计算改进的测地线距离变换;然后利用变换结果用滤波的方法得到恢复后的深度图。通过对算法进行加速处理,能够实时得到恢复结果。实验结果表明,文中提出的深度恢复方法能够有效地从低质量的深度图恢复出高质量的深度图,效果显著。     

结合高斯回归模型和隐马尔可夫随机场的模糊聚类图像分割

为了克服经典模糊聚类图像分割算法对图像噪声的敏感性,该文提出结合高斯回归模型(GRM)和隐马尔科夫随机场(HMRF)的模糊聚类图像分割算法。该算法用信息熵正则化模糊C均值(FCM)的目标函数,再用KL(Kullback-Leibler)信息加以改进,并将HMRF和GRM模型应用到该目标函数中,其中HMRF模型通过先验概率建立标号场邻域关系,而GRM模型则在中心像素标号与其邻域像素标号一致的基础上建立特征场邻域关系。利用提出的算法和其它经典算法分别对模拟图像、真实SAR图像以及纹理图像进行了分割实验,并对分割结果进行精度评价。实验结果表明,该文提出的算法具有更高的分割精度。     

并行MCMC算法的SAR影像分割

MCMC(Markov Chain Monte Carlo, MCMC)方法采用顺序改变表征像素类属性的标号变量值会导致算法运算时间长、收敛速度慢等问题。为此,本文提出并行化改变像素标号值的MCMC方案,在贝叶斯推理框架下,依据高斯分布及MRF(Markov Random Field, MRF)模型建立SAR(Synthetic Aperture Radar, SAR)影像分割模型,设计实现基于多线程的并行采样方案;为了解决MRF标号场中邻域像素标号相关性问题,提出独立的像素并行采样的准则;同时,限制并行线程的数量,以保证采样的随机性。运用传统的串行算法和提出的并行算法对模拟和真实SAR影像进行影像分割实验;定性和定量的时间和精度评价结果表明:该方案在不影响分割精度的前提下大幅缩短影像分割时间,提高了效率。      

彩色图像分割技术研究

彩色图像分割可以认为是由彩色空间和分割技术两部分组成,介绍了彩色空间,并对7种彩色空间进行了较详细的描述,概述了分割技术,包括:基于像素、基于区域、基于边缘、基于模型、基于物理的方法等,分析了各方法的优缺点并给出了结论.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.