压电陶瓷迟滞建模及控制仿真

为了提高压电陶瓷驱动器在调节光学谐振腔长度时的精度,设计了一种压电陶瓷驱动系统。同时,为了改善压电陶瓷的迟滞特性,利用Duhem迟滞模型对其进行建模,利用梯度下降法对模型参数进行辨识,得到迟滞模型;并利用逆模型补偿及比例、积分、微分(PID)复合控制方法进行控制。实验结果表明,Duhem模型可以有效地拟合压电陶瓷驱动器的迟滞,在15μm的范围内,最大拟合误差小于0.2μm;同时,在复合控制下,驱动器的最大控制误差为12nm,表明该复合控制方法的有效性。     

基于RBF神经网络的压电执行器迟滞建模

针对压电陶瓷执行器的迟滞非线性特性问题,该文提出了一种最小二乘法与径向神经网络相结合的建模方法。首先,通过搭建压电执行器位移测试系统,得到执行器输出位移与输入电压的对应曲线关系,然后用最小二乘法对该曲线进行多项式拟合,得到压电执行器的迟滞数学模型,在此基础上再用径向基函数神经网络方法对该模型进行优化。最后对建立的模型进行分析发现,用最小二乘法拟合的多项式数学模型,其最大误差Emax=0.244 7 μm,标准方差δ=0.059 02 μm,而利用径向基函数(RBF)神经网络优化建模后,Emax=0.079 89 μm,δ=0.016 04 μm。实验证明该模型有较高的准确性, 该文为压电执行器迟滞建模提供了一种新的方法。     

压电陶瓷迟滞建模及控制仿真

为了提高压电陶瓷驱动器在调节光学谐振腔长度时的精度,设计了一种压电陶瓷驱动系统。同时,为了改善压电陶瓷的迟滞特性,利用Duhem迟滞模型对其进行建模,利用梯度下降法对模型参数进行辨识,得到迟滞模型;并利用逆模型补偿及比例、积分、微分(PID)复合控制方法进行控制。实验结果表明,Duhem模型可以有效地拟合压电陶瓷驱动器的迟滞,在15 μm的范围内,最大拟合误差小于0.2 μm ;同时,在复合控制下,驱动器的最大控制误差为12 nm,表明该复合控制方法的有效性。     

压电微动平台的改进PI迟滞模型研究

为了建立既有较高精度又有较快运算速度的压电微动平台迟滞模型,对传统PI迟滞模型进行了改进研究。由于压电微动平台初载曲线前半升程斜率变化较大,而后半升程斜率变化较小,因此,采用非等分域值方法建立了其PI迟滞模型,通过求取所建模型与实测初载曲线误差的最小二范数辨识出了模型的相应参数,实验验证了所建模型的有效性。实验结果表明,在20.7μm的平台最大位移范围内,模型的最大误差为0.71μm,平均误差为0.23μm。     

串联死区算子的压电微夹钳PI迟滞模型

针对Prandtl-Ishlinskii(PI)模型要求被描述对象的初载曲线为凸函数,且模型与其逆模型都应关于算子中心对称的不足,通过引入死区算子对PI模型进行改进,以使其更好地描述具有非凸、非奇对称的压电陶瓷材料的迟滞特性。基于实测的压电微夹钳初载曲线,采用等分阈值方式,并通过使改进PI模型与实测初载曲线间的误差函数为最小,辨识出改进PI模型的参数,建立了压电微夹钳的迟滞模型。实验结果表明,在微夹钳15.2μm的最大位移范围内,模型误差的变化范围为-0.310~0.156μm,所建模型能很好地描述压电微夹钳的迟滞特性。     

径向双压电叠堆执行器建模与实验研究

该文设计了一种径向双压电叠堆执行器,可以实现单压电或双压电叠堆驱动,在不增加轴向长度的基础上实现输出位移的放大.针对该执行器,建立了基于Bouc-Wen的压电动态迟滞力模型作为执行器整体动力学模型力的输入;在MATLAB/Simulink中,基于最小二乘法对迟滞力模型中的参数进行辨识.仿真与实验结果表明,在峰-峰值14...     

压电叠堆执行器迟滞建模与前馈补偿研究

针对压电叠堆执行器输入电压与输出位移的动态迟滞特性,结合非对称静态Bouc-Wen迟滞模型,建立了压电叠堆执行器动态迟滞模型,并采用粒子群算法辨识出6个模型参数。为提高压电叠堆执行器动态位移输出精度,进一步推导出压电叠堆执行器迟滞逆模型,最终在此基础上对压电叠堆执行器进行前馈补偿研究。仿真与实验结果对比表明,在0~120V峰值电压与0~500Hz激励频率内,所建立的动态迟滞模型能够较好地描述与预测压电叠堆执行器的动态输出位移。前馈补偿实验研究结果表明,利用所建的迟滞逆模型补偿后,压电叠堆执行器的滞环减小,输出位移非线性度下降约3%。     

基于几何法求解PI逆模型参数

压电陶瓷驱动的快速反射镜具有优良的动态性能,能够满足高精度定位的任务需求,但其固有的迟滞特性严重影响了其性能的进一步提高。基于PLAY算子的迟滞数学模型具有结构简单、便于数学求解、模型精度较高的优点,但模型参数需要通过系统辨识得到,并且其逆模型参数辨识存在物理量不易获得、误差较大的不利条件。利用几何法,提出了一种求解PI逆模型参数的算法。实验证明该算法动态性能好、模型精度较高,同时基于该算法的PI逆模型前馈控制较好地解决了压电陶瓷驱动的快反镜迟滞效应补偿问题。     

压电驱动器迟滞特性的类Hammerstein模型

压电驱动器中迟滞特性会影响微操作系统的定位精度。为了消除迟滞对系统的不良影响,该文提出了类Hammerstein模型来描述压电驱动器的迟滞特性。首先,提出了改进迟滞算子（MDHO）,在算子中增加偏置、死区宽度、斜率调整滞环的高度和宽度,体现迟滞的非对称性和速率相关性;然后,利用改进迟滞算子加权叠加表示静态非线性部分,迟滞算子的参数和权重可以在线调整来适应外界条件的变化,利用输入自回归模型表示动态线性部分,建立了可以描述压电驱动器速率相关迟滞特性的类Hammerstein模型;最后,依次通过最小二乘法、矩阵扩围、矩阵奇异值分解对模型中的参数进行辨识,并证明了所辨识的参数是无偏估计。研究结果表明所提出的建模方法是有效的。     

压电叠堆执行器迟滞非线性建模与分析

压电叠堆执行器输出位移具有迟滞非线性特性,在高精度控制和电静液作动器等应用领域,为实现进一步研究和控制,需要针对该特性进行建模。该文首先针对压电叠堆执行器的静态特性,采用改进的非对称BoucWen模型建立压电叠堆执行器的准静态模型;其次,为描述其动态位移输出特性,将执行器输出力分为线性模块和滞后模块,根据系统动力学方程建立压电叠堆执行器迟滞非线性动态模型,进行参数辨识、模型仿真与实验研究。结果表明,在400Hz频率范围内,所建立的模型能够准确描述与预测压电叠堆执行器输出位移的迟滞非线性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.