关于传输线等效集总电路模型的拓展教学

传输线的等效集总电路模型有助于理解和掌握传输线的基本概念,并可用于电特性的仿真分析。本文分别探讨了在教学过程中需拓展的两个重要知识点。其一,在高频工作情况下,需要对含有频变分布参数的传输线进行准确建模,获取相应的等效集总电路模型;其二,在分析多导体构成的耦合传输线时,等效集总电路模型同样值得探究。     

多导体传输线瞬态响应研究

针对多导体传输线瞬态响应的无源性问题,提出了基于集总等效源模型的多导体传输线瞬态响应模型. 从外场激励下的多导体传输线的频域电报方程解出发,将外场在传输线上激励的分布电压源和电流源与传输线指数矩阵解耦,建立了集总等效电压源和电流源模型. 为避免复杂的傅里叶反变换及卷积运算,推导了集总源模型的时域递推方程. 在此基础上,采用时域有限差分法建立了端接线性负载、非线性负载和外场激励下的不等长多导体传输线瞬态响应离散递推方程. 通过对无损传输线的仿真对比,验证了方法的有效性. 最后,对端接线性负载、非线性负载和外场激励下的不等长多导体传输线瞬态响应进行了试验和仿真分析.       

多导体传输线瞬态响应研究

针对多导体传输线瞬态响应的无源性问题,提出了基于集总等效源模型的多导体传输线瞬态响应模型.从外场激励下的多导体传输线的频域电报方程解出发,将外场在传输线上激励的分布电压源和电流源与传输线指数矩阵解耦,建立了集总等效电压源和电流源模型.为避免复杂的傅里叶反变换及卷积运算,推导了集总源模型的时域递推方程.在此基础上,采用时域有限差分法建立了端接线性负载、非线性负载和外场激励下的不等长多导体传输线瞬态响应离散递推方程.通过对无损传输线的仿真对比,验证了方法的有效性.最后,对端接线性负载、非线性负载和外场激励下的不等长多导体传输线瞬态响应进行了试验和仿真分析.     

传输线网络瞬态响应灵敏度分析

在传输线网络瞬态响应灵敏度分析之中,提出了一种基于NILT的新的分析方法。该方法将传输线及其效应连同电子元器件及单元电路作为一个整体,根据传输线在电路中的拓扑关系,将传输线网络瞬态响应灵敏度分析问题转化为求解传输线网络瞬态响应问题,以及传输线ABCD矩阵对电路参数的偏导数问题。通过将ABCD矩阵进行级数展开,极大地简化了ABCD矩阵对电路参数偏导数的计算以及传输线网络瞬态响应灵敏度的分析。本文方法不需要对耦合传输线进行解耦,具有简单、精确、高效等特点,算例结果表明了本文方法的有效性。     

基于高阶时域有限差分法与改进节点分析法混合求解复杂传输线网络瞬态响应

该文提出一种用于求解复杂传输线网络瞬态响应的新型混合算法.通过构建混合单端口网络模型将传输线分布参数系统与集总电路分开,分别采用高阶FDTD(2,4)与改进节点电压分析法(MNA)分析传输线与端口电路瞬态响应.与以往暂态分析方法相比,高阶FDTD(2,4)的低数值色散特性,使得求解传输线时可采用粗网格离散,能方便处理电长度较长的传输线.同时直接采用电路分析方法求解端口电路,能够获取电路中各节点的电压电流波过程.通过几组数值实例验证了该方法的有效性及准确性.     

基于螺旋电感的Wilkinson功分器设计

Wilkinson功分器是一种常用的无源器件,随着通信设备小型化的要求越来越高,无源器件的体积成为其发展瓶颈。为解决这个问题,在分析螺旋电感主要参数及等效电路基础上,提出了一种基于π型等效1/4波长传输线原理,利用集总参数元件组成等效微带线电路的集总参数方法,设计出Si沉底上的螺旋电感和片上电容来实现微波单片集成(MMIC)电路的Wil-kinson功分器。实验表明,同等性能情况下,该方法设计的Wilkinson功分器可以有效减少Wil-kinson功分器的外形尺寸。     

端接复杂电路传输线网络的电磁耦合时域并行计算方法

针对端接复杂电路传输线(TL)网络的电磁耦合问题,仍缺乏高效的场路协同仿真技术。该文将传输线方程与时域有限差分(FDTD)方法、诺顿定理和置换定理以及NGSPICE软件相结合,并引入消息传递接口(MPI)并行技术,提出一种高效的时域混合并行算法(FDTDTL-NGSPICE)。首先,根据诺顿定理和置换定理,将传输线网络分解为传输线子系统和复杂电路子系统,并构建对应的等效电路模型。然后,使用FDTDTL并行算法计算传输线子系统沿线各点的电压和电流,并获取对应诺顿等效电路的电流源和等效导纳大小。最后,使用NGSPICE对复杂电路子系统进行传导干扰分析,获得复杂电路各元件上的瞬态响应,并将端口电压反馈给传输线子系统作为边界,实现传输线网络电磁耦合的场线路联合协同仿真。通过对3类典型场景的计算实例,分别使用时域混合并行算法和电磁仿真软件CST电缆工作室(CS)进行数值模拟并对比,验证所提算法的置信度。     

传输线网络瞬态响应灵敏度分析方法

针对传输线网络瞬态响应灵敏度分析问题,提出了一种采用快速傅里叶变换的灵敏度分析方法。方法从描述整个传输线网络特性的电路方程出发,将传输线网络瞬态响应灵敏度转化为求解传输线网络瞬态响应以及网络参数矩阵对电路参数的偏导数,实现了传输线网络任意节点瞬态响应对任意网络参数的灵敏度分析。该方法无需对耦合传输线进行解耦,能够分析任意类型传输线及任意负载。算例结果表明,方法正确有效。     

背板互连线高速信号传输的计算机仿真

采用ABCD矩阵法对传输高速信号的背板上具有频变参数的互连线建立等效时域网络模型,并给出接插件等效传输线模型和端接的I／O缓冲器IBIS瞬态行为模型,利用这些模型对实际电路进行仿真,其结果与Ansoft公司的PNC软件仿真结果相吻合,仿真效率有明显提高。     

任意集总网络在FDTD中的二维多网格建模方法的研究

基于FDTD的集总参数微波电路的场路混合方法,针对任意集总网络,建立了器件端口加载的二维多网格分布模型。并拓展了改进节点分析法(MNA),提出了一种通用的多网格加载求解方法,说明了求解辅助矩阵及变量的填充规则,并给出了线性与非线性集总网络的求解流程。用所提出的模型与方法分析了带封装的肖特基二极管MA4E1317及有源场效应管JS8851-AS,与商业软件ADS及HFSS-ADS联合仿真得到的结果吻合良好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.