基于DCT域的任意分辨率视频可伸缩编码

空间分辨率可伸缩编码能够满足网络视频对不同码率的要求以及不同用户显示终端的需求,成为近几年研究热点.由此提出一种基于DCT域准卷积的任意分辨率下采样方法,该方法通过分析子块与宏块DCT系数之间的关系,实现了由子块DCT系数预测宏块DCT系数,通过低通滤波器截取预测的宏块低频DCT系数,实现任意分辨率下采样.实验证明:该方法适合诸如H.264、AVS等基于DCT变换的视频编码标准,且提供灵活的空间可伸缩能力.     

一种快速的DCT域MPEG-2到MPEG-1下采样转码技术

文章提出了一种快速的DCT域MPEG-2到MPEG-1准卷积下呆样算法。在转码过程中。头信忠保持不变，且要求将每四个相邻MPEG-2宏块变为一个下采样MPEG-1宏块：用最大最小距离方法确定下采样宏块的运动向量、用简单多数原则确定下采样宏块类型以及用加全平均方案确定下呆样宏块的量化参数。另外，对下采样视频转码失真来源进行了分析。实验结果表明我们提出的转码方案，在同样条件下与级联像素域转码器（TM5）相比，不仅其计算复杂性减少67．6％、PNSR提高0．1dB，而且具有很小的比特控制错误。     

DCT域视频图像转码的下采样算法

研究了DCT域视频图像转码的下采样算法,包括DCT域帧内编码帧Ⅰ帧的两种下采样算法——线性内插法和DCT系数截断法,以及DCT域帧间编码帧P帧的下采样算法——DCT域反运动补偿和DCT域运动补偿算法。对stefan视频序列第一帧（Ⅰ帧）分别采用两种下采样算法进行转码下采样,通过峰值信噪比（PSNR）值的比较说明线性内插法转码下采样的效果要优于DCT系数截断法。采用DCT域反运动补偿算法实现在DCT域重构stefan视频序列第四帧（P帧）的帧内数据。     

一种改进的基于后处理去除块效应算法

在基于DCT压缩编码系统中,DCT都是基于模块的。即首先将图像分成8×8的像素块,然后对每块进行DCT得到64个DCT系数。但由于是分别对每块进行DCT,块与块之间的相关性被忽略,导致所谓的“块效应”。文中提出了一种改进的基于后处理的去块效应方法。在图像重建时,首先在块与块之间提出了4种模式,包括了3个与频率相关的模式和4个块拐角处的拐角模式。然后对不同模式下采用低复杂度的去块效应滤波器,最后重建图像。不论是视觉效果还是图像质量都有所提升。     

HDTV到SDTV转码的关键技术及软件实现

研究了 DCT域中空间分辨率下采样的关键技术,包括DCT域图像尺寸下采样、DCT域的运动补偿、运动矢量重用等,并以软件方式实现了HDTV到SDTV的转码.     

DCT域中高清电视到标清电视转码技术及软件实现

随着数字电视的发展与普及,不同编码视频的转码变得越来越重要。研究DCT域中空间分辨率下采样的关键技术,包括DCT域图像尺寸下采样、DCT域的运动补偿、运动矢量重用等,并以软件方式实现了HDTV到SDTV的转码。     

MPEG-2到H.264下采样转码快速算法

提出了一种从MPEG-2中的DCT系数到H.264中的HT系数转换并同时进行下采样的算法.提出的方法可同时进行DCT-HT系数转换和下采样两个过程,并根据变换矩阵的稀疏性和初始MPEG-2系数矩阵的特征,引入了快速算法,可减少大约82%甚者99%的运算量,而对于图像质量几乎没有降低.     

DCT域下采样视频水印技术

根据DCT域Watson模型提出了一种抵抗下采样攻击的不可感知水印模型.用DCT域准卷积下采样方法得到图像的下采样版本,利用亮度特征和图像感知失真限制自适应确定被嵌入水印序列的区域、长度和强度,以使上采样水印图像具有良好的视觉效果和鲁棒性.实验结果表明该算法对噪声干扰及视频下采样具有较好的鲁棒性,而且不使用原始图像,就可进行水印的相关检测.     

DCT域中高清电视到标清电视转码技术及软件实现

随着数字电视的发展与普及,不同编码视频的转码变得越来越重要.研究DCT域中空间分辨率下采样的关键技术,包括DCT域图像尺寸下采样、DCT域的运动补偿、运动矢量重用等,并以软件方式实现了HDTV到SDTV的转码.     

DCT域中高清电视到标清电视转码技术及软件实现

随着数字电视的发展与普及，不同编码视频的转码变得越来越重要。研究DCT域中空间分辨率下采样的关键技术，包括DCT域图像尺寸下采样、DCT域的运动补偿、运动矢量重用等，并以软件方式实现了HDTV到SDTV的转码。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.