0.18μm CMOS可编程增益放大器

介绍了一种基于0.18μm CMOS工艺,应用于5 GHz无线局域网(WLAN)的可编程增益放大器(PGA)。该PGA采用分级可选放大器的系统结构,核心电路由交叉耦合的共源共栅放大器和电流反馈放大器组成。为消除工艺角偏差对增益精度的影响,设计中加入了增益微调的机制。后仿真结果表明:PGA电压增益可在0 dB到41 dB之间以1 dB步长变化,双端输出的电压摆幅为1 Vp-p,并具有大于10 MHz的-3 dB带宽和小于21.1 mW的静态功耗。     

宽带电台中的CMOS自动增益控制设计

自动增益控制(AGC)环路能够实现对输出信号幅度的精确控制,是射频接收器中不可或缺的一部分。提出了一种用于射频宽带电台中的自动增益控制环路。针对自动增益控制环路,从可编程增益放大器(PGA)、可变增益放大器(VGA)和峰值比较器3个角度论述了电路结构和设计方法。对AGC的功能实现和性能指标进行了仿真分析。仿真结果表明,该自动增益放大器在0.13μm互补型金属氧化物半导体(CMOS)工艺下,具有80 d B动态范围,增益步进为1 d B。     

带有DCOC结构的中频可编程增益放大器

介绍了一种用于射频识别接收机、能有效消除直流失调的中频可编程增益放大器.单级放大器的仿真结果可提供.10～20 dB的增益控制范围,增益步长为2 dB,增益误差小于0.3 dB.通过在直流失调消除环路中增加一级滤波器的方法,有效地降低了直流失调和低频噪声,在40 kHz工作频率下等效输入噪声电压38.04 nV/ Hz,直流失调消除电路可将输出直流失调量抑制在输入失调量的2%范围以内.电路采用0.18μm IP6M CMOS工艺实现.     

增益精确的可变增益放大器

可变增益放大器是GPS接收机中的一个关键模块,它与反馈环路组成的自动增益控制电路为模/数转换器(ADC)提供恒定的信号功率.模拟信号控制增益的VGA增益连续变化,但是线性度较差.这里采用电阻形式的负反馈的放大器来设计一个0～30 dB增益变化的中频可变增益放大器,VGA的增益精度并不取决于工艺、电压和温度等因素对电阻、MOS管开关的影响,增益误差在各个工艺角下都小于5%.基于0.18 μm CMOS工艺的测试结果表明,带内纹波小于0.1 dB,IIP3达到31 dBm@0 dB,功耗为3 mA,其中包括直流偏移消除模块和CMOS源极跟随缓冲电路.因此,该放大器适合在接收机模拟前端使用.     

一种用于GPS接收机的宽带、高增益变化范围的AGC设计

介绍了一种宽带、高增益变化范围的用于GPS接收机的模拟CMOS自动增益控电路(AGC)的设计.整个AGC环路用0.35μm CMOS工艺实现,包括可变增益运算放大器(VGA)、固定增益运算放大器(FGA)、增益控制电路和直流失调抑制电路.经过仿真验证AGC的最大增益可达80dB,增益变化范围是56dB,环路锁定时间为70μs.     

宽带自动增益控制环路

宽带宽系统常常需要直流一高频自动增益控制（ＡＧＣ）电路来简化各种信号类型。尽管市场上有很多种高速ＡＧＣ部件，但是其工作带宽往往极宽，而且售价也不便宜，不适合当前的应用。本电路充分利用直流可变增益放大器技术，以用外部环路来实施ＡＧＣ电路。自动校平环路或增益控制环路很难实施，在改变增益时不可能不影响带宽。但是，高速单片可变增益放大器和高速电压反馈放大器可用来为连续波形信号实施一种高性能快速建立环路功能（参见附图）。同时，该环路能保持不受增益变化影响的增益带宽。该电路在正向通道采用一种可变增益放大器（…     

一种新颖的可应用于多模多频接收机可配置的可变增益放大器

本文阐述了一种新颖的可应用于多模多频接收机射频前端可配置的可变增益放大器的设计方法。可变增益放大器包括增益放大电路,控制电路,直流失调消除电路和模式转换电路四个部分。这种结构可以在保证多模多频应用的前提下通过硬件复用最大化来节省芯片面积和功耗。电路采用0.18 um CMOS 工艺,在1.8V的供电电压下可实现5dB 至87dB的动态范围,电路的带宽（所有增益下）大于80 MHz。此外,直流失调消除电路有效抑制了直流失调成分至小于40mV。整个电路的功耗小于3mA,面积为705um*100um。     

一种应用于IEEE 802.11 b/g/n无线局域网收发机的CMOS模拟基带电路

本文提出了一种应用于直接变频无线局域网收发机的模拟基带电路,该电路采用标准的0.13微米CMOS工艺实现,包括了采用有源RC方式实现的接收4阶椭圆低通滤波器、发射3阶切比雪夫低通滤波器、包含直流失调消除伺服环路的接收可变增益放大器及片上输出缓冲器。芯片面积共1.26平方毫米。接收基带链路增益可在-11dB至49dB间以2dB步长调节。相应地,基带接收输入等效噪声电压（IRN）在50 nV/sqrt(Hz) 至30.2 nV/ sqrt(Hz)间变化而带内输入三阶交调（IIP3）在21dBm至-41dBm间变化。接收及发射低通滤波器的转折频率可在5MHz、10MHz及20MHz之间选择以符合包含802.11b/g/n的多种标准的要求。接收基带I、Q两路的增益可在-1.6dB至0.9dB之间以0.1dB的步长分别调节以实现发射IQ增益失调校正。通过采用基于相同积分器的椭圆滤波器综合技术及作用于电容阵列的全局补偿技术,接收滤波器的功耗显著降低。工作于1.2V电源电压时,整个芯片的基带接收及发射链路分别消耗26.8mA及8mA电流。     

一种带有直流失调和载波泄漏矫正系统的直接变频WLAN收发机基带电路

本文介绍了一种基于IEEE 802.11a/b/g标准的双频段直接变频WLAN收发机基带电路,并引入了一些用于消除接收机直流失调和发射机载波泄漏的关键技术,从而使得该直接变频结构满足WLAN的性能指标。在接收机基带中,可变增益放大器提供62dB的增益范围且步长为2dB;直流失调矫正电路用来消除由版图不匹配和自混频造成的误差。该矫正环路有着不随增益调节而变化的高通极点和较快的稳定时间,后者通过在接收前导序列时设定1MHz的高通极点而在正常接收数据时设定30KHz的极点得以实现。发射机基带采用基于片上AD和DA的自动矫正系统来抑制载波泄漏,AD在矫正完成之后会自动关闭从而可以节省功耗。此电路采用0.35微米锗硅工艺并工作在2.85V电源电压下,接收基带放大器和直流失调消除电路共消耗17.52mA,而发射载波泄漏矫正环路共消耗8.3mA（矫正完成后为5.88mA）;其相应的芯片面积分别为0.68mm2和0.18mm2。     

0．18um CMOS可编程增益放大器

介绍了一种基于0．18umCMOS工艺，应用于5GHz无线局域网（WLAN）的可编程增益放大器（PGA）。该PGA采用分级可选放大器的系统结构，核心电路由交叉耦合的共源共栅放大器和电流反馈放大器组成。为消除工艺角偏差对增益精度的影响，设计中加入了增益微调的机制。后仿真结果表明：POA电压增益可在0dB到41dB之间以1dB步长变化，双端输出的电压摆幅为1Vpp，并具有大于10MHz的-3dB带宽和小于21．1mW的静态功耗。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.