60 GHz芯片间无线互连系统中的Rake接收性能

在60 GHz芯片间无线互连信道中存在着多径干扰问题,采用Rake接收是提高系统性能的重要手段。针对脉冲超宽带( IR-UWB)的芯片间无线互连系统,分析了多径信道下Rake接收机的误码性能。在IEEE 802.15.3 c信道模型基础上,对不同分支数以及不同合并方案下的选择Rake ( S-Rake)和部分Rake(P-Rake)接收机误码性能进行了研究。仿真结果表明采用支路数为2的P-Rake在数据速率为10 Gb/s时仍具有良好的抗多径性能,这为芯片间无线互连系统的Rake接收方案提供了技术参考。     

60 GHz芯片间无线互连系统的MMSE-RAKE接收机误码性能分析

针对60 GHz芯片间无线互连信道中存在的多径衰落问题,将匹配滤波器和最小均方误差算法应用到60 GHz脉冲通信系统,重点分析多径信道下采用最小均方误差合并算法的RAKE接收机的误码性能。在IEEE 802.15.3c信道模型的基础上,对采用不同合并方式、不同干扰用户数目下的RAKE接收机误码性能进行了研究。仿真结果表明,随着干扰芯片数量的增加,引入匹配滤波器和最小均方误差算法的RAKE接收机不仅降低了接收机的采样率,而且有效提高了系统抗多用户干扰的能力,为芯片间无线互连系统的RAKE接收机设计提供了技术参考。     

一种用于头盔式水下无线光通信的卷积码研究

为了提高头盔式水下无线光通信系统的可靠性,设计了一种新的（3,1,1）卷积码。介绍了水下光通信模型及其对编码的要求,计算了未编码系统在水下高斯白噪声信道下的误比特率。给出了此卷积码的具体的编译码方法,推导了编码后系统误比特率计算公式。在不同系统参数、水质和传输距离的情况下,对未编码系统和编码系统分别进行了仿真。仿真结果表明:编码能够改善系统的误码性能;系统参数越大,编码改善系统性能的能力越强;水体衰减系数或传输距离越大,编码改善系统性能的能力越弱。     

MIMO传输系统中差分空时编码的能耗分析

Alamouti方案是为发射天线数为2的系统提供完全发射分集增益的一种空时分组码,该编码译码方案简单,在接收端采用最大释然译码算法,因而得到了广泛的应用.但是该编码方案需要在接收端恢复信道系数才能进行译码.所以许多有关空时编码的研究都是假设信道的状态在接收端是已知的.而基于正交的差分空时编码方案可以在接收端不知道信道状态信息下进行译码,因而可以简化译码电路.主要分析了在多入多出无线传输条件下基于正交的差分空时编码在发射端的能量消耗,并通过仿真比较了该差分空时编码与传统的Alamouti编码在一定的误码率条件下随着传输距离的不同发射端发射每比特信息所需要的能量.     

基于MATLAB对卷积码的性能分析

本文对比了在加性高斯白噪声（AWGN）信道下经BPSK调制后的数据不编码与添加卷积编码后接收到的信道输出的误码性能,并通过对比对卷积码性能进行分析。采用MATLAB自编函数对[2,1,8]卷积码以及维特比译码进行仿真,且对其性能进行分析。由于卷积码有性能floor,编码增益随信噪比降低而体现不明显。仿真结果表明：当信噪比等于-1dB时,一个序列通过加性高斯白噪声信道后接收到的信道输出误比特率大于10-1,且该序列运用[2,1,8]卷积码编码,维特比译码（硬判决）后所得的序列误比特率升高。当信噪比为2dB时,一个序列通过加性高斯白噪声信道后接收到的信道输出误比特率约为4＊10-2,且该序列运用[2,1,8]卷积码编码,维特比译码后所得的序列误比特率小于10-3,误码率远低于不编码时的误码率。因此卷积码适用于信道输出误码率比较低时候。     

60GHz 毫米波在芯片无线互连中的传播特性研究

研究了60GHz 毫米波在芯片无线互连特定场景下的电磁传播问题。应用完整电磁理论,以单极阵子为研究对象在收发天线正对、非正对两种情形中,对径向分量在完整电磁波中的作用进行理论分析及数值仿真。数值仿真结果表明:当收发天线间距小于3 倍波长时,径向分量对完整电磁波有一定的贡献;当收发天线间距大于3 倍波长时,可应用传统远场分析进行近似处理。此外,在HFSS 中对特定的芯片间无线互连场景进行了建模及电磁仿真:当天线两端到PCB 介质板的距离约小于0. 7 ~ 0. 8mm 时,PCB 介质板对电磁波的反射会对天线造成一定的频偏,该频偏随着天线到PCB 介质板的距离的增大而减小;当天线两端到PCB 介质板的距离约大于0. 7 ~ 0. 8mm 时,基本不会造成频偏。这为60GHz 毫米波在芯片间无线互连中的应用提供了电磁传播的理论依据。     

TD-LTE系统咬尾卷积码译码算法研究

在TD-LTE系统中,要获得准确可靠的信道传输,就要在发送端采用差错控制编码。而卷积码作为一种前向纠错技术被应用于很多现代通信系统中,此外采用卷积码编码的数据在接收端通常都采用Viterbi译码来实现。首先介绍了咬尾卷积码编码原理,然后研究了译码的两种方法并在此基础上提出改进算法,最后通过性能仿真以及译码复杂度的比较来分析这三种译码算法。     

基于Gamma-Gamma湍流信道下的卷积码性能研究

为了研究不同码型的卷积码在水下湍流信道中的误码率(BER)性能,采用接受-拒绝采样模拟湍流信道乘性干扰,并选择二进制相移键控(BPSK)调制方式,建立Gamma-Gamma湍流信道通信系统仿真模型。仿真结果表明：在不同强度的湍流信道中,采用卷积码编码均能提升系统的BER性能;卷积码的码率越小,系统BER性能提升越显著;随着信噪比(SNR)增大,记忆深度越长,系统BER下降速度越快;采用软译码比采用硬译码时增益至少提升2.82 d B;卷积码的解码不仅受当前信息的影响,还与之前的码元信息有关。     

级联码在遥测系统中的应用

遥测信道是一种典型的时变衰落信道,为弥补信道衰落对信息传输质量的影响,通常采用纠错编码的方法比单纯依靠加大系统功率裕量的方法更有意义。根据RS码的相关理论及编译码原理,结合遥测信道的特点,提出了RS码与卷积码级联的编译码方案,最后对该级联码的方案进行了软件仿真和硬件设计。实现结果表明级联码的增益要优于单纯的卷积码2 dB。     

接近香农限的编织卷积码设计与仿真

本文主要阐述了斜纹编织卷积码的编码结构、迭代译码以及活性距离和交织器对其误码性能的影响等基本概念。通过系统仿真,在AWGN信道下发现斜纹编织卷积码的系统性能与系统传输帧长和编码器个数都有很大的联系,其误码性能十分接近香农限,且没有错误地板效应。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.