微悬臂谐振传感器闭环接口和嵌入式频率电路

设计了谐振式微悬臂梁传感器闭环接口和嵌入式频率读出电路。首先,谐振式微悬臂梁传感器和接口电路组成闭环自激振荡系统。为了提高该闭环系统的频率稳定性和频率跟踪性能,引入具有无相差频率跟踪的锁相环电路,并设计放大移相电路以满足闭环自激振荡条件。该闭环系统的频率稳定性可达±0.1Hz,并且能够实时跟踪悬臂梁谐振频率的变化。此外,单独设计了嵌入式的频率读出电路,用于检测并显示悬臂梁的谐振频率。将悬臂梁传感器、接口电路和频率读出电路集成在一起,做出了小巧便携式样机,用该样机可成功探测到体积分数低至约几个10-9量级的DMMP气体。     

Michelson干涉型光纤弱磁场传感器信号检测电路研究

针对Michelson光纤弱磁场传感器的特点,设计和实现了控制和信号检测系统。着重对传感器信号检测部分的电路进行了分析和研究,采用了相位自跟踪锁定放大技术进行微弱信号检测;针对磁致伸缩材料的非线性响应特点,设计了定偏闭环反馈系统,使探头始终工作在最佳偏置磁场下。经实验验证,系统灵敏度高,抑制噪声能力强。     

非晶带GMI效应闭环弱磁场传感器

利用脉冲电流退火处理后的Co66.3Fe3.7Si12B18非晶带作为敏感元件,研制出一种基于非晶带GMI效应的闭环磁场传感器。分析了传感器的工作原理,设计了传感器的信号处理以及负反馈电路,并对传感器性能进行了测试。闭环传感器在线性量程为±260A/m范围内,线性度提高为0.49%。传感器可应用于地球磁场、环境磁场等微弱磁场检测领域。     

微机械加速度计校正电路的工程设计

梳齿式微机械加速度计是一种敏感电容极板间距变化的电容式传感器,通过静电力反馈构成力平衡式的闭环系统。为了满足稳定性、快速性等要求,需要采用校正电路。微机械表头性能具有较大的离散性是工程中的常见问题。本文根据控制理论结合工程试验,针对表头转角频率和低频增益等参数对校正电路设计方案进行分类。使系统在满足带宽的前提下,在全量程范围内具有充足的稳定裕量。并且,为了适应工程应用,电路形式采用两个运放,保证了电路形式的简单,为电路冗余设计提供了方便。通过较多数量的试验验证,此种方法对闭环系统的稳定性、 带宽有很好的控制作用。     

一种低功耗微弱信号放大电路的优化设计与研究

针对远距离声源发射的水声信号微弱、水声接收设备电源能量有限的特点,提出一种功耗小、对无源元件误差灵敏度低、高增益放大的微弱水声信号通用放大电路.系统采用场效应管共源单调谐放大器为前置放大级,由四级级联低功耗运放构成带通滤波放大电路,省去传统的R、C低通网络,实现了对微弱水声信号的高增益放大和海洋背景噪声的归一化处理.通过计算电路网络传递函数极点证明了电路系统的稳定性.海上使用表明系统具有精度高、适应性强、电路稳定性好、功耗小等优点.     

高分辨力闭环微加速度计接口电路

本文报道一种电容式闭环微加速度计的低噪声、开关电容CMOS接口电路。采用相同电极分时复用的方法,从而避免电容敏感与静电力反馈的馈通现象。并设计PID电路保证真空封装的高Q值加速度计的闭环稳定性及动态响应特性。整体电路结构只需单端放大器,传输门和电容。测试结果显示,接口电路工作在±5V条件下,整体微加速度计具有±3g满量程,非线性0.05%,800Hz带宽,刻度因子为1.2V/g,噪声密度为0.8μg/ 。芯片采用2um 双金属双多晶N阱CMOS工艺加工,芯片面积15.2 mm2。测试结果证明,本文电路达到高精度微加速度计系统设计要求,可以应用到地震监测、石油勘探等领域中。     

功率因数校正电路大信号分析

本文从ＰＦＣ电路特点入手，建立了用于大信号分析的ＴＬ域稳态近似模型，并依此对闭环系统的Ｌｙａｐｕｍｏｖ稳定性进行分析，得出为保证大范围渐近稳定性的恰 当反馈函数。     

基于EWB的负反馈放大电路的方框图分析

本文采用方框图分析法,对由运放构建的电压并联负反馈放大电路进行了仿真分析和理论计算.仿真结果表明:闭环增益与开环增益满足基本关系式;引入负反馈后稳定性得以提高,与理论一致;输入、输出电阻减小;深负反馈条件下,反馈系数的倒数近似等于闭环增益,验证了负反馈放大电路中的一些基本结论.同时,开环和闭环增益的理论计算结果与仿真一致,说明了仿真分析在负反馈放大电路方框图法中的应用.     

热激励硅谐振梁压力传感器闭环数据采集系统

利用正反馈闭环谐振原理,采用偏置交流激振、一倍频拾振的方法,设计了闭环谐振电路和相应的数据采集电路,并对该电路进行了综合调试.实验结果表明,该系统实现了该传感器频率信号的自动跟踪和信号转换,以及快速、准确采集压力数据的功能,采集频率范围为30～100kHz,频率采集精度为±1Hz,温度采集精度为0.03℃.     

上海交通大学电子技术专业自学考试课程答疑 负反馈放大器的分析——《线性电子线路》答题之二

分析负反馈放大器常用方框图分析法.它以单环负反馈放大器的理想模式为基础,导出基本反馈方程式来分析计算负反馈电路.它首先将负反馈放大器电路区分成基本放大器和反馈网络两个方框,然后分别计算出基本放大器的开环增益K、开环输入电阻R_t、开环输出电阻R_o、反馈网络的反馈系数k_f和反馈深度F.最后利用负反馈的性质来分析计算出负反馈放大器的闭环增益K_f、闭环输入电阻R_(tf)和闭环输出电     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-