3 mm单平衡混频器芯片

为满足3 mm收发系统的小型化需求,采用InP高电子迁移率晶体管(HEMT)工艺,设计并制造了一款3 mm单平衡混频器芯片.该单平衡混频器芯片采用了反向并联肖特基二极管对(APDP)和三线耦合Marchand巴伦结构,在获得精确的肖特基二极管非线性模型和巴伦电磁场S参数模型的基础上,对混频器进行了电路设计.最终获得了良好的工作带宽、变频损耗与隔离度指标,在片测试结果显示,该芯片射频、本振频率为82～100 GHz,变频损耗小于9 dB,本振(LO)-射频(RF)隔离度大于20 dB,中频带宽为0.1～18 GHz,整体芯片尺寸为1.1 mm×1.0 mm.     

基于三导体耦合线的毫米波Marchand balun建模与设计（英文）

提出了一种基于三导体耦合线结构的毫米波Marchand巴伦的新型宽带模型.基于c模和π模理论,对三导体耦合线进行了分析并采用传输线和理想变压器对其建立了模型.通过电磁场仿真提取了模型参数并使用该耦合线模型建立了Marchand巴伦的模型.基于该模型,使用GaAs工艺设计了一种毫米波Marchand巴伦并进行了流片制造,所设计的巴伦工作在15~55 GHz频率范围,测试结果表明该巴伦具有较好的幅值和相位平衡度,同时验证了模型的准确性.     

基于三导体耦合线的毫米波Marchand balun建模与设计

本文提出了一种基于三导体耦合线结构的毫米波Marchand巴伦的新型宽带模型。基于c模和π模理论,对三导体耦合线进行了分析并采用传输线和理想变压器对其建立了模型。通过电磁场仿真提取了模型参数并使用该耦合线模型建立了Marchand巴伦的模型。基于该模型,本文使用GaAs工艺设计了一种毫米波Marchand巴伦并进行了流片制造,所设计的巴伦工作在15GHz~55GHz频率范围,测试结果表明该巴伦具有较好的幅值和相位平衡度,同时验证了模型的准确性。     

基于双导体耦合线Marchand 巴伦的 快速建模与设计*

针对Marchand 巴伦模型参数提取效率低,耗时长的问题,本文提出了一种快速提取Marchand 巴伦模型参数的 方法。传统的耦合线建模过程中,当耦合线的物理尺寸,如长度、宽度、间距发生变化,需要重新进行电磁场仿真,占据大量的 计算机资源和仿真时间。本文首先基于c、π 模表征的耦合线分布模型构建了Marchand 巴伦模型,通过对耦合线全波电磁场 仿真获得的模型参数提取结果进行数据分析和拟合,找出耦合线物理尺寸和模型参数之间的关系,建立对应方程,避免在巴伦 设计优化过程中反复进行电磁场仿真,达到快速设计Marchand 巴伦的目的。使用该方法基于PCB 板设计了中心频率为 2.4 GHz 的巴伦进行验证,测试结果表明该方法提取的模型参数具有较好的精度,能够满足巴伦的快速设计需求。     

宽带混频器的优化设计

采用0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并实现了一款单片宽带混频器.该混频器采用双平衡混频器结构,以串联的两个漏源相连的PHEMT作为环形二极管电桥中的二极管以提升混频器线性度.本振巴伦和射频巴伦均采用螺旋线式Marchand巴伦,为降低巴伦的幅度及相位不平衡度,采用遗传算法对巴伦的几何参数进行了优化设计.该混频器电路采用0.25 μm GaAs PHEMT工艺实现,芯片面积为1.5mm×1.1 mm.测试结果表明,当本振功率为20 dBm时,变频损耗小于7 dB,输入三阶交调点ⅡP3大于22 dBm.本振端口到射频端口和中频端口的隔离度均大于30 dB.     

一种工作在400GHz基于互补耦合线的Marchand巴伦

设计了一种工作在400ＧＨｚ,的紧凑型Marchand巴伦,本设计采用互补耦合线(Complementary Conducting-Strip Coupled-Line, CCS CL),与传统的薄膜耦合线(Thin-Film Coupled-Line, TF CL)相比,CCS CL具有更高的耦合系数和几乎相同的奇偶模传输特性,因此基于CCS CL设计的Marchand巴伦具有更小的电路面积和更加平衡的差分输出。为了验证该设计,采用0.13μｍ 1P8M CMOS 工艺制作了一种背靠背式Marchand巴伦测试电路,测得Marchand巴伦的插入损耗为0.75ｄＢ,10ｄＢ回波损耗带宽为110ＧＨｚ(从330ＧＨｚ到440ＧＨｚ),设计的400ＧＨｚMarchand balun的电路面积仅为0.0018mm2(不包括焊盘面积),远小于其他类型的太赫兹巴伦结构。     

微带巴伦设计

根据微带耦合线的准TEM模参数 ,推导出相同耦合线Marchand巴伦须满足的导纳方程 ,讨论了改善巴伦性能的方法———电容补偿法。ADS仿真结果表明 :采用最佳条件选取的耦合线 ,巴伦的反射系数接近最小 ,传递系数接近最大 ;采取电容补偿后 ,可进一步改善巴伦的性能。最后给出宽边耦合线巴伦的实验结果。结果表明 :可用上述导纳方程设计巴伦耦合线的参数。     

一种单片毫米波双平衡二极管混频器

本文介绍了一种采用WIN 0.150.15μm pHEMT设计的单片双平横二极管混频器。本次设计中采用了改进的折叠型Marchand balun来减少芯片面积。同时电路中还使用U型耦合线改善了端口之间的隔离度并提供了中频输出端口。该混频器取得了较好的测试结果,在26-40 GHz频带范围内,混频器具有较低的变频损耗为5.5-10.7dB,隔离度大于26dB,并且中频带宽为DC-14 GHz,芯片面积为0.96mm2     

基于InP HEMT的太赫兹分谐波混频器芯片设计

基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175～205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号低损耗带通传输的同时缩小了芯片尺寸。测试结果表明混频器在175～205 GHz频率范围内,单边带(SSB)变频损耗小于15 dB,典型值14 dB。混频器中频频带为DC～25 GHz,射频端口对本振二次谐波信号的隔离度大于20 dB。芯片尺寸为1.40 mm×0.97 mm,能够与相同工艺的功率放大器、低噪声放大器实现片上集成,从而满足太赫兹通信等不同领域的应用需求。     

一种平面宽带Marchand Balun的新型模型

本文提出了一种新的Marchand Balun 模型。通过对构成Balun基本单元的λ/4耦合线进行奇、偶模分析,获得了耦合线的基本等效表达式。基于所提出的5阶集总元件等效电路,耦合线的自感、互感系数和电容均能根据奇偶模特性阻抗计算得到,从而可以较为方便的得到Balun的模型参数。为对模型进行验证,本文基于GaAs工艺设计了一个单片宽带Marchand Balun,并使用三维电磁场工具对其进行了仿真验证,最后通过流片测试对模型进行了实验验证。电磁场仿真与实验结果与所提的模型仿真结果相一致,应用该模型可以使对Marchan Balun的设计变得更为快速和便捷,并且适用于较宽的频带范围。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.