注入锁定半导体激光器的相位调制特性研究

本文研究了在考虑载流子变化引起折射率变化的情况下,注入锁定半导体激光器(LD)的相位调制(PM);并提出了在PM时,对伪强度调制(SIM)的抑制.     

电光调制的频谱特介—Ⅱ.内腔调制

从内腔电光耦合调制输出光场振幅和光场强度的傅里叶展开出发,研究了内腔电光调制的频谱特性.数值计算得出了内腔电光调制输出功率谱和振幅谱的各谐波幅度,以及不同直流偏压下的调制深度.采用CdTe晶体,进行了CO_2激光的内腔电光调制试验,得到了与理论分析一致物结果.     

纠缠原子与光场作用体系的压缩特性

研究了Kerr介质中初始处于纠缠态的两二能级原子与相干光场相互作用体系的压缩特性.通过数值计算,讨论了原子偶极间相互作用耦合常数和Kerr介质与单模腔场相互作用的耦合强度对体系中的双原子偶极压缩和光场压缩的影响.结果发现在弱光场情况下,纠缠态原子偶极间相互作用和Kerr介质与光场作用越强,都使原子偶极振幅压缩现象从压缩状态退缩到无压缩状态;在强光场情况下,纠缠态原子偶极间相互作用越强,光场振幅压缩次数增多、振荡频率变慢;Kerr介质与光场作用越强,光场振幅压缩次数减少、振荡频率变快.     

电光调制的频谱特性—I.外腔调制

从外腔电光耦合调制输出光场振幅和光场强度的频谱展开出发,研究了外腔电光调制的调制方式.引入相对谐波畸变,得出了电光调制在不同直流偏压下,可近似为振幅调制和强度调制的条件,实验结果与理论分析相一致.     

注入锁定半导体激光器的噪声

本文用半经典理论研究了注入锁定半导体激光器(LD)的FM噪声和AM噪声,讨论了注入光功率、锁定相位等对噪声特性的影响。     

一种CPM信号频率成形脉冲盲估计算法

频率成形脉冲是连续相位调制(CPM)信号解调所必需的调制参数,由脉冲形状和脉冲长度两个参数共同决定。该文利用CPM信号的自相关特性,深入分析了CPM信号调制参数与自相关函数之间的内在联系,并在此基础上提出了一种频率成形脉冲的盲估计算法。该算法首先实现脉冲形状的盲识别,然后将CPM信号的调制指数调整为整数,最后通过自相关函数中非零值的个数来实现脉冲长度的盲估计。计算机仿真结果与分析表明,该算法实现简单,能够在任意调制阶数和调制指数下有效估计出频率成形脉冲。     

注入锁定半导体激光器调制特性研究

通过速率方程建立外光注入半导体激光器的理论模型,在注入锁定条件下对其进行稳态及小信号分析,研究了注入光对调制特性的影响.结果表明,强光注入在一定程度上增大了谐振频率和调制带宽,但是抑制了响应增益,通过增大偏置电流加以补偿,才能获得理想的响应增益和带宽;并且外光注入大大降低了低频调制时的频率啁啾.     

光注入半导体激光器中激光混沌的泵浦周期调制控制

该文用泵浦周期电流调制控制外部注入相干光场半导体激光器的激光混沌,发现在不同调制深度和调制频率范围内,能有效地控制激光混沌到稳定的周期轨道(极限环)上,而且能够把激光振荡频率锁定在调制频率上,且这种调制控制也可以使激光器显现不同的激光混沌波形变化。     

半导体激光器的强度调制研究

本文讨论了半导体激光器(LD)的强度调制,研究了LD的动态频率漂移,给出了LD参数对它们的影响。     

注入锁定法布里-珀罗激光器的单模工作特性

使用分布式反馈(DFB)激光器对法布里-珀罗(F-P)激光器进行单模注入锁定.通过改变F-P激光器的偏置电流,DFB激光器的输出功率以及两激光器间的波长失谐量,对注入锁定F-P激光器的光谱特性、功率特性以及频率响应特性进行实验分析.找出影响注入锁定F-P激光器稳定性的因素,并测量注入锁定F-P激光器的稳定锁定区;通过优化注人条件实现F-P激光器的高边模抑制比(SMSR)输出,最高可达55 dB;通过与自由运转F-P激光器比较,发现注入锁定可以明显抑制半导体激光器在高频调制下光谱的展宽.注入锁定后F-P激光器的3 dB调制带宽接近14 GHz.实验结果表明,通过合理设计光注入条件,注入锁定技术可以明显改善F-P激光器的光谱特性以及高频响应特性,并在高速光纤通信领域中得到广泛应用.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its