S波段分布式光纤拉曼放大器的实验研究

在S波段对3种不同配置的色散补偿型分布式光纤拉曼放大器(FRA)进行了研制。实验证明：5km DCF-50km G652光纤色散补偿型分布式FRA的增益和噪声特性优于50km、G652-5km DCF光纤和25km G652-5km DCF-25km G652光纤色散补偿型分布式FRA。测量了5km DCF-50km G652光纤色散补偿型分布式FRA的增益光谱和噪声谱。存DWDM光纤传输系统中,色散补偿分布式FRA对S波段1520nm光谱波段2个光谱间隔为0．262nm(频率间隔为34．1GHz)信号信道光谱的传输特性优于50km G652正色散FRA和5km DCF负色散FRA。     

利用CFBG补偿色散实现2 015 km 8×10 Gb/s光传输

利用啁啾光纤光栅(CFBG)串联的多波长色散补偿器对长距离传输的8个信道信号进行色散补偿,各个信道波长符合ITU-T标准,波长间隔为100 G.系统采用掺Er3+光纤放大器(EDFA)作为功率放大器,在2 015 km的G.652光纤上无前向纠错(FEC)无电中继实现8×10 Gb/s零误码传输.结果表明,利用CFBG构成的色散补偿器各信道补偿一致性好,CFBG不但能通过滤除带外噪声有效减小长距离传输中由放大器产生的自发辐射噪声(ASE)的积累,提高传输信号的信噪比(OSNR),而且其较低的非线性特性有利于抑止信号劣化,从而有效提高长距离波分复用(WDM)的传输性能,扩展无电中继传输距离.     

利用光子晶体光纤实现10 Gb/s光传输系统宽带色散补偿

利用光子晶体光纤（PCF）,在10Gb／s光传输系统中、20nm宽带范围内完成了色散补偿传输实验,得到了很好的色散补偿效果。实验中,10Gb／s光脉冲序列经过2．163km普通单模光纤被展宽后,用26mPCF对其进行色散补偿,此光纤在C波段20nm波长范围内对普通单模光纤能够实现较好的色散斜率补偿。实验结果表明,PCF在色散补偿方面具有很大的潜力,在未来光通信系统中将发挥重要作用。     

利用光子晶体光纤实现10 Gb/s光传输系统的色散补偿

利用光子晶体光纤（PCF）在10Gb/s光传输系统中对普通单模光纤中传输的光脉冲进行了色散补偿，获得了很好的补偿效果。实验中，10Gb／s光脉冲序列经过2.163km普通单模光纤被展宽后．利用26m长光子晶体光纤对其进行色散补偿．补偿后脉冲基本恢复到了初始形状。进一步的理论计算表明，此光纤在C波段20nm波长范围内对普通单模光纤能够实现较好的色散斜率补偿，补偿后剩余色散小于5ps／nm。理论与实验结果表明光子晶体光纤在色散补偿方面具有很大的潜力．在未来光通信系统中将发挥重要作用。     

DCF色散补偿性能的研究

分析了光纤色散和非线性效应。研究了利用色散补偿光纤(DCF)进行色散补偿的三种方案,数值模拟了采用这三种方案对在G.652光纤上传输375 km速率为10 Gb/s和40 Gb/s光信号进行色散补偿时入纤光功率对系统误码性能的影响,并分析了模拟结果,筛选出其中一种最好的方案,给出了具体的入纤光功率的取值范围。     

用增益箝制的EDFA实现8×2.5Gb/S波分复用系统的动态增益均衡

在掺铒光纤放大器（EDFA）内部将增益箝制在增益谱平坦区,研制成增益箝制的EDFA,实现了波分复用（WDM）8×2．5Gb／s×450kmG．652光纤级联放大传输系统的动态增益均衡,在传输信道数量改变的动态运行情况下,在误码率为10－12时,接收机灵敏度变化0．5dB。     

用级联光纤光栅补偿色散在G.652光纤上4×10Gbps无电中继低代价传输640km

用计算机控制扫描法写入的低偏振模色散(PMD＜1.2ps)切趾啁啾光纤光栅级联补偿了4×10Gbps在G.652光纤上传输640km的色散,功率代价不大于1.5dB,光栅引入的损耗小于4dB,并研究了光源波动时系统功率代价的变化.实验表明总的功率代价不与光栅组的数目或光栅组数目的平方根成比例关系,为长距离无中继在G.652光纤传输用光栅补偿色散提供了实验依据,光栅的时延纹波不是各组单个光栅纹波的简单叠加,而是与光栅的位置及EDFA增益有关.     

色散补偿用啁啾光纤光栅

随着单信道传输速率的提高（10Gb/s、40Gb/s系统)和信号传输带宽的增加，光纤传输系统中的色散问题日益显著，目前的10Gb/s光传输系统中，主要采用色散补偿光纤（DCF）进行色散补偿。DCF具备能实现宽带补偿的优点，但也存在突出的缺点：非线性效应显著；损耗大（为补偿80km的光纤色散需增加8到10dB的附加损耗)，长度随不同的色     

10 Gbit/s无中继光传输系统的色散补偿

在光纤通信中色散补偿的方式有很多,文章分别研究了色散补偿光纤(DCF)、啁啾光纤光栅(CFG)两种色散补偿方案.通过数值仿真分别实现了10 Gbit/s 198 km和220 km G.652光纤的无中继传输.仿真实验证实,采用CFG补偿可使传输距离增加约10%,并且当误码率为10-12时,无误码传输的功率代价仅为1.6 dB.     

一种用于高速DWDM系统的色散补偿新方案

在高速光纤通信系统、特别是单信道速率为10Gb／s以上的系统中,色散补偿是提高信噪比(SNR)、改善系统性能的必要手段。从实用的角度,提出了一种适用于单通道40Gb／s、80个通道的高速密集波分复用(DWDM)系统的色散补偿方案,即采用全拉曼放大,将色散补偿光纤进行合理的配置,达到色散补偿的目的。仿真验证表明,该方案可实现在普通单模光纤中跨距500km的传输。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its