空间高效硅太阳电池减反射膜设计与数值分析

结合AM0太阳光谱特性对空间硅太阳电池的减反射膜进行了设计分析,得到了最小反射时的最佳膜厚.分别讨论了单、双、三层减反射膜厚度变化对反射率的影响,并对有钝化层的Si O2 (94 nm) / Ti O2 (6 0 nm)双层减反射膜进行了优化设计,优化后硅太阳电池的短路电流和效率分别提高了2 .1%和1.4 % .     

丝网印刷制备黑硅太阳电池及其性能表征

采用纳米金颗粒催化腐蚀的方法在硅片表面制备得纳米多孔结构,实现了1.5%（300-1200 nm）的权重反射率。本文采用OPCl3扩散、丝网印刷制备前后电极及共烧等常规太阳电池工艺来制备黑硅太阳电池,对不同腐蚀深度及不同扩散方阻的黑硅太阳电池片的输出电性能进行了分析,并对制备工艺进行了优化,提高了电池的转换效率,实现了丝网印刷制备12.17%的黑硅太阳电池转换效率。     

空间高效硅太阳电池减反射膜设计与数值分析

结合AM0太阳光谱特性对空间硅太阳电池的减反射膜进行了设计分析,得到了最小反射时的最佳膜厚.分别讨论了单、双、三层减反射膜厚度变化对反射率的影响,并对有钝化层的SiO2(94nm)/TiO2(60nm)双层减反射膜进行了优化设计,优化后硅太阳电池的短路电流和效率分别提高了2.1%和1.4%.     

多晶Si太阳电池新型制绒工艺研究

提出一种采用二次酸腐蚀的多晶Si制绒新方法,首先在HF/HNO3的富HNO3体系中对Si片进行一次腐蚀,之后在富HF体系中进行二次腐蚀,以优化表面织构,减少光在Si表面的反射损失。制绒后,用扫描电子显微镜(SEM)对Si片进行了表面形貌分析,用Carry 5000紫外-可见-近红外分光光度计测量反射谱线,得到未镀减反射膜(ARC)的二次腐蚀制绒的最低反射率为20.34%,比一次腐蚀制绒(22.70%)低2.36%。将二次腐蚀新工艺应用于太阳电池工业制备中,对电池输出参量进行检测分析。结果表明,经过二次腐蚀工艺处理的太阳电池开路电压(VOC)、短路电流(JSC)和效率η均比采用一次腐蚀工艺的太阳电池有不同程度的提高,制成的太阳电池最高效率为14.93%。     

高效率MINP硅太阳电池的研制

用扩散法制作MINP硅太阳电池的轻掺杂N区,用PECVD方法淀积的Si_3N_4作其减反射膜,在电阻率为1.5±0.5Ω·cm的P型硅衬底上制取了转换效率为16.5%的MINP太阳电池(有效面积AM1.5、100mw/cm~2、25℃)。本文分析Si_3N_4作MINP电池减反射膜的优点,并对限制MINP太阳电池性能进一步提高的因素进行讨论。     

阴极材料对有机太阳电池性能的影响

分别用Al、LiF/Al和Ca/Al制备了三种不同阴极材料的体相异质结有机太阳电池。对其光电特性进行了表征,分析了不同阴极材料对电池性能的影响机制。结果表明:所制备的有机太阳电池在10–1W/cm2辐照度的光照下,开路电压分别为0.419 3,0.565 0和0.591 1 V,能量转换效率分别为1.17%、2.06%和1.91%;采用LiF/Al层状阴极制备的有机太阳电池具有更高的能量转换效率;功函数愈低的材料做阴极,有机太阳电池的能量转换效率也愈高。     

一种新型太阳能电池减反射膜的制备

提高太阳电池的光电转换效率的方法有很多，该文提出了一种折射率不能变化的减反射膜，具有更好的减反射效果，增加了光生载流子的生成数量，从而提高晶硅太阳电池的转换效率。通过硅烷和氨气流量的连续变化，从而使减反射膜的折射率由上至下等速率地增大，可提高电池转换效率0.13%。     

晶体硅太阳电池减反射膜的研究

在太阳电池表面形成一层减反射薄膜是提高太阳电池的光电转换效率比较可行且降低成本的方法。应用PECVD（等离子体增强化学气相沉积）系统,采用SiH4和NH3气源以制备氮化硅薄膜。研究探索了PECVD生长氮化硅薄膜的基本物化性质以及在沉积过程中反应压强、反应温度、硅烷氨气流量比和微波功率对薄膜性质的影响。通过大量实验,分析了氮化硅薄膜的相对最佳沉积参数,并得出制作减反射膜的优化工艺。     

纳米结构在新型太阳电池中的应用进展

介绍了应用低维纳米结构提高转换效率的新型太阳电池的研究现状,分别说明了基于量子点、量子线、量子阱结构新型太阳电池的工作原理、制备工艺、存在的问题及最新进展.同时,给出了这些太阳电池未来的发展方向,指出其在太阳电池领域中的重要地位.     

n型晶体硅太阳电池光诱导衰减现象研究

基于n型晶体硅太阳电池,分析了经光辐照后电池各性能参数的变化,探究了n型晶体硅太阳电池光诱导衰减机理.使用工业化设备在大面积(156 mm×156 mm)n型单晶硅片上制备太阳电池.利用太阳光谱模拟仪对制备的太阳电池进行光照处理,对比各阶段太阳电池电性能参数.结果表明,光照时会导致太阳电池表面减反射膜SiN:H/Si界面处积聚大量固定电荷,增大界面态密度,破坏电池表面钝化层结构,导致开路电压和短路电流产生较大衰减,35 kWh/m2光辐照后n型硅太阳电池效率衰减3.6％.在380℃低温退火处理后电池效率基本可恢复到初始状态.内量子效率测试结果表明光辐照后电池短波区域响应减弱,前表面界面效应导致电池效率发生较大衰减.     

Effect of antireflection coatings and coverglasses on silicon solar cell performance

The high reflectivity of the polished silicon surface of the newer N⁺/P silicon solar cells has emphasized the need for properly designed antireflection coatings to obtain improved solar cell performance. The problem is complicated by the facts that solar cells are generally tested in air, but are for their final application covered with a glass or quartz slide which is adhesive-bonded to the cell surface, and further, that solar cells operating in a nuclear particle radiation environment change their spectral response and are frequently optimized for performance at the end of design-life. Experiments have been performed to explore the antireflection characteristics of thin films of silicon monoxide which have been evaporated on the solar cell surface. The effect of the antireflection coating thickness on cell response as a function of wavelength has been determined and the improvement in cell short circuit current for Air Mass Zero space sunlight evaluated. Included in this study was the evaluation of the antireflection characteristics after the application of a coverglass with adhesive over the antireflection coating. For comparison, coverglasses were also applied to bare cells with no antireflection coating present. In all cases the various coating comparisons were based on the cell short-circuit current performance in Air Mass Zero sunlight.     

工艺参数对TiO2-Ag烧结体导电性的影响

用sol-gel法粉体技术制备TiO2粉,在TiO2粉体上用化学镀的方法制备了Ag为包覆层的复合导电粉体.测试TiO2-Ag复合导电粉体的体积电阻率,讨论了含银量、压力、煅烧温度对其体积电阻率的影响.试验结果表明,制备的粉体导电性能良好,且粉体烧结温度低.     

多晶硅太阳电池的氮化硅钝化

全面介绍了等离子增强化学汽相沉积 ( PECVD)纳米氮化硅 ( Si Nx∶ H)光电薄膜的技术发展及现状 ,分析了 PECVD法沉积的 Si Nx∶ H薄膜对多晶硅太阳电池的体钝化和表面钝化机理     

Performance enhancement of multicrystalline silicon solar cells and modules using double‐layered SiNx:H antireflection coatings

Silicon nitride coating deposited by the plasma‐enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double‐layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double‐layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double‐layered and single‐layered antireflection coating types. On the cell level, the double‐layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm² for the average open‐circuit voltage and short‐circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double‐layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single‐layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd.     

Use of tin oxide as an inexpensive antireflection coating for p on n polycrystalline silicon solar cells

The potential of tin oxide as an inexpensive antireflection (AR) coating for polycrystalline silicon solar cells has been investigated. Undoped tin oxide films of a desired thickness were deposited over p on n polycrystalline silicon solar cells by spray pyrolysis of an alcoholic solution of hydrated stannic chloride at 500°C. Evaluation of cell performance before and after this AR coating showed that the AR coating is highly compatible with the polycrystalline silicon solar cells. About 40-50 percent improvement in the short-circuit current of p on n polycrystalline cells has been measured. The coating may be highly suited to large-scale production of low-cost polycrystalline silicon solar cells for terrestrial application.     

Double layer antireflection coating for high-efficiency passivatedemitter silicon solar cells

Recent high-efficiency silicon solar cells employ high-quality oxides both for surface passivation and as a rudimentary antireflection coating. This gives over 3% reflection at the cell front surface, even though the surface is microstructured. A double layer antireflection coating applied to cells with reduced SiO₂ thickness reduces the cell reflection. However, although reflection is minimized by reducing the oxide thickness to values below 100 Å, a rapid falloff in both open-circuit voltage and short-circuit current is observed experimentally once this thickness is reduced below 200 Å. The best compromise is found when oxide thickness is 250 Å which allows improved short-circuit current density without appreciable loss in open-circuit voltage     

Fields in extended cavity lasers

The electromagnetic fields for an extended-cavity laser are described precisely and in detail. The extended-cavity laser consists of a semiconductor laser diode with a partially reflecting coating on one facet and an antireflection coating on the other coupled by radiation through a lensed-fiber, single-mode guide to another partially reflecting coating terminating a narrow-wavelength filter. The formulation is based on the Lorentz reciprocity theorem, the fields are described by angular plane-wave spectra, and the equivalent transmission line representation is used to determine the fields reflected and transmitted by partially reflecting and antireflection coatings. The design of antireflection coatings is considered in detail, and a formula which gives the optimum distance from the diode antireflection coating to an inline lensed fiber is derived     

Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light

The polarization photosensitivity of two types of GaAlAs/GaAs heterophotoelements has been investigated. It has been shown that in heterophotoelements without an antireflection coating the induced photopleochroism is governed by optical processes at the air-GaAlAs surface boundary, and the angular dependence of the short-circuit photocurrents is described by the Fresnel relations. It was found that the angular dependence of the photocurrents for s and p polarizations are similar in heterophotoelements with an antireflection coating and exhibits growth with increase of the angle of incidence. In the cleared region the induced photopleochroism is observed to fall to zero. It has been shown that heterophotoelements without an antireflection coating can be used as wideband photoanalyzers with a maximum azimuthal photosensitivity of up to 0.1 A/W·deg for an angle of incidence of 75°, while polarization photosensitivity spectroscopy makes it possible to carry out express diagnostics of the clearing effect in thin-film solar cells. Fiz. Tekh. Poluprovodn. 33, 747–751 (June 1999)     

低温制备柔性染料敏化太阳电池TiO_2薄膜电极

采用丝网印刷技术在柔性基底ITO/PET上制备TiO2多孔薄膜,经过低温烧结得到TiO2多孔薄膜电极。以D102染料为敏化剂,KI/I2为电解质,Pt电极为对电极,制成电池后测试了电池的光电性能。结果表明:以乙醇作为分散剂添加到P25粉体中,采用丝网印刷技术制膜,100℃低温烧结可以在柔性基底ITO/PET上制备出表面粗糙度良好、具有一定光电性能的TiO2多孔薄膜电极,用其制作的太阳电池转换效率达1.33%。