多氟多氰类负性液晶化合物的合成

为了满足液晶母体在不同情况下的参数需求,合成了2种新型的含有多氟多氰结构的具有较大负介电各向异性值的未知化合物用于液晶母体的调配。以邻苯二甲腈和邻二氟苯为原料,通过一系列反应合成了2种该类新型液晶单体。通过核磁共振、元素分析等方法确定了分子结构;利用偏光显微镜、示差扫描量热仪和旋转黏度计等测试手段,对其参数进行测定。实验表明,该类多氟多氰类化合物具有较小的光学各向异性值(Δn=0.096~0.107)、负值很大的介电各向异性值(Δε=-15.2~-16.7)和较大的旋转黏度(γ1=234.8~248.6mPa·s)。该类新型的多氟多氰类化合物可以用于液晶母体的调配并改善其部分性能,且制备方法原料易得,收率较高,易于实现工业化生产。     

多氟二苯乙炔类负性液晶化合物的合成

以烷基环己基酮、1,2-二氟苯为起始原料(或以2,3-二氟烷基苯为起始原料),采用正丁基锂低温下制得金属锂化试剂,再经过系列反应制得4-烷基环己基-2,3-二氟碘苯(或4-烷基-2,3-二氟碘苯),其与4-乙氧基-2,3-二氟苯乙炔发生Sonogashira偶联反应,合成出了3种2,3,2′,3′-四氟二苯乙炔类液晶化合物.进行了产品的结构标定以及参数测定,确定该类化合物有较大的光学各向异性(Δn)和负值较大的介电各向异性(Δε),并且具有较宽的相变温度范围,可以用于改善液晶材料的响应速度和驱动电压.     

新型1,2,4-噁二唑类液晶化合物的合成

为了满足液晶母体在不同情况下的参数需求,合成了3种含有噁二唑结构的新型负性未知化合物用于液晶母体的调配。以芳烃的碘代物为原料,通过三步反应合成了该类新型化合物。通过核磁共振(NMR)、元素分析(EA)和红外光谱(FT-IR)等分析方法确认了分子结构;利用偏光显微镜(POM)、示差扫描量热仪(DSC)等测试手段,对该类化合物的液晶参数进行了测定。实验表明,该类新型的1,2,4-噁二唑类化合物具有较小的光学各向异性值(Δn=0.107~0.118)和负值较大的介电各向异性值(Δε=-1.6~-4.3),并且个别单体具有较宽的相列相温度范围。该类新型的1,2,4-噁二唑类化合物可以用于液晶母体的调配并改善部分性能,且制备方法原料易得,合成路线简单,收率较高,易于实现工业化生产。     

含亚甲氧基桥键负性单体液晶的制备及性能研究

含亚甲氧基桥键负性单体液晶由于具有较大的负介电各向异性,较低的旋转粘度、良好的相溶性而被广泛应用于VA-TFT配方中,但其合成步骤长,合成及提纯难度大。本文讨论了含亚甲氧基桥键及苯环侧向氟取代的负介电各向异性单体液晶的合成方法,该方法主要采用2,3-二氟-4-乙氧基苯酚与含不同长度烷基链的苯磺酸酯反应引入亚甲氧基桥键,避免了常用醚化方法中卤代物的使用和卤素离子对单体液晶性能的影响。使用1 H NMR对目标单体液晶的结构进行了表征;采用DSC、热台偏光显微镜、LCR测试仪等对目标单体液晶的相变温度、光学各向异性、介电各向异性等一系列液晶性能参数进行了测试。     

侧位含氟苯乙炔类液晶化合物的微波介电性能

近年来基于液晶材料的微波通信器件研究发展迅速,液晶材料的介电损耗成为制约微波器件发展的瓶颈,然而目前对微波用液晶材料性能报道较少。本文以低熔点高双折射侧位含氟苯乙炔类液晶作为研究对象,将其按一定比例掺杂到母体液晶MA中,采用矩形谐振腔微扰法测试所选液晶化合物在微波频段(10～30GHz)下的介电性能,探讨分子结构对微波频段液晶介电性能的影响作用。实验结果表明:在高频时的液晶介电各向异性与分子极性和双折射率相关,侧位含氟苯乙炔类和端基异硫氰基苯乙炔类液晶化合物均具有较大的介电各向异性(Δ_(ε_r)0.85);对于具有较高双折射率的对称含氟三苯二炔类和三苯乙炔异硫氰基类液晶化合物表现出较低的介电损耗(tanδ_(ε_r⊥)8.0×10~(-3),18GHz),而异硫氰基的含氟二苯乙炔类和不对称含氟三苯二炔类液晶化合物则表现出较高的介电损耗(tanδ_(ε_r⊥)8.0×10~(-3),18GHz)。     

2,3,4-三氟苯乙炔类液晶的合成

以2,3,4-三氟苯胺为原料,经桑德迈尔反应合成出2,3,4-三氟碘苯,2,3,4-三氟碘苯和2-甲基-3-丁炔-2-醇在四(三苯基膦)钯催化下合成4-(2,3,4-三氟苯)-2-甲基-3-丁炔-2-醇。4-(2,3,4-三氟苯)-2-甲基-3-丁炔-2-醇在氢氧化钾作用下生成2,3,4-三氟苯乙炔。2,3,4-三氟苯乙炔与6种碘代苯发生Sonogashira反应,合成出6种2,3,4-三氟二苯乙炔类液晶化合物。进行了产品结构标定以及参数的测定,确定了化合物具有较大的光学各向异性(Δn),较宽的相变温度范围。     

含CF_2O桥键四氢吡喃液晶化合物的合成与性能

以对二溴苯、5-烷基-四氢吡喃-2-酮和3,4,5-三氟-2-甲基苯酚为原料,经过丁基锂反应、脱羟基、Suzuki和Williamson等共5步反应最终合成2[4′[二氟(3,4,5-三氟2-甲基苯氧基)甲基]-3′,5′-二氟-[1,1′联苯]-4-基]-5-烷基四氢吡喃类液晶化合物。反应中考察了温度、溶剂、催化剂和原料比对反应收率的影响。其中脱羟基反应滴加温度-70℃~-80℃,原料羟基化合物:三乙基硅烷:三氟化硼乙醚的摩尔比为1∶1.5∶2.5;Suzuki反应选用四(三苯基磷)钯反应收率最高;3,4,5-三氟-2-甲基苯酚的Williamson醚化最优条件为在DMSO与水的混合溶剂中醚化6h。纯化后目标产物气相色谱纯度≥99.5%,总收率约为35.6%,结构经1 HNMR及GC-MS确证。该化合物添加到液晶的基础配方中,能增加介电各向异性(Δε),降低阈值电压。     

一类嘧啶液晶的合成与性质研究

以烷基苯乙酮为原料通过一系列反应制备出新一类嘧啶液晶,对其性能进行了测试。比较了嘧啶环连接氰基时,两个氮原子不同朝向对液晶性质的影响。研究结果表明,这类液晶具有较大的光学各向异性和介电各向异性。     

端烯多氟三联苯液晶的合成与性能研究

为了适应快速响应的要求,液晶盒的设计向低盒厚的方向发展,所以对液晶折射率的要求趋向于增大,设计混合液晶配方趋向于考虑添加更多浓度的多苯环结构的液晶单体。三联苯液晶由于具有大的折射率、低的旋转黏度、高的清亮点是开发高折射率液晶配方的必要成分,常见的三联苯液晶往往是介电中性或很大的极性,本文设计、合成、评测了一类端烯多氟三联苯液晶单体,含有丙烯醚端基、丁烯端基,相对于常见单体,具有较大的光学各向异性Δn、中等的介电各向异性Δε、较高的清亮点CP,并对其表现出的性能参数与液晶分子结构之间的关系进行了初步分析探讨,通过GC-MS、NMR等分析方法对结构进行了表征。     

含氟液晶的性能、应用与合成进展

有源矩阵液晶显示器(AM-LCD)对液晶性能有严格的要求,这极大地促进了含氟液晶的发展。本文综述了近年来含氟液晶材料的开发、合成与应用进展,重点介绍了氟原子引入母体分子中不同位置对液晶化合物性能的影响以及相应的合成方法。文中结合液晶材料的相变温度、介电各向异性、双折射和黏度等数据,说明氟取代液晶分子中的关键位置,对液晶性能具有明显改善。重点介绍了末端氟取代液晶、苯环侧向氟取代液晶和中心桥键氟取代液晶的合成方法。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.