一种带高阶温度补偿的片内时钟振荡器设计

本文基于0.18μm CMOS工艺,设计了一款适用于片上系统SoC的无需晶振的片内12MHz时钟信号产生电路。利用高阶温度补偿方案,该时钟振荡器能在较宽的温度范围内实现振荡频率的高稳定性。此外,电路的稳压器设计使得振荡器频率在电源电压变化时也能保持相当好的稳定性。仿真结果表明,在-40℃~125℃温度范围内,此振荡器振荡频率的温度系数仅为40ppm/℃,电源电压变化±10%时,振荡频率的相对误差仅为±0.012%,完全能够满足常规数字系统的要求。     

一种用于电子标签的低功耗高精度时钟电路设计

设计了一种适合射频电子标签的高精度时钟产生电路,在分析影响输出频率稳定性各因素的基础上,针对标签电路低功耗宽工作环境的要求,提出一种全CMOS结构带隙基准做偏置的电流受限型环形振荡器.全MOS自偏置PTAT迁移率和阈值电压互补偿带隙基准源的设计,使时钟电路受电源电压和温度的影响极小.全电路采用TSMC 0.18 μm CMOS工艺实现.HSpice仿真结果表明:电源电压为1.2～2 V,温度从-10～ 70 ℃变化时,带隙基准温度系数和电源电压抑制比分别为12 ppm/℃和59 dB,时钟稳定度在±2.5%以内,电路平均功耗仅为4 μw.     

LCD驱动控制时钟电路的设计

介绍了一种用于STN LCD（超扭曲液晶显示）驱动控制芯片的时钟产生电路。该电路能方便地实现片内时钟的精确产生,其特点为片内产生基准电压源。振荡频率在一定的范围内与电源电压无关,可满足移动通信的需要。该电路有一定的温度补偿功能,输出矩形波的占空比可调,并且设有数字开关,可以在需要的时候切断整个电路,使该模块的功耗降为零。     

一种用于流水线ADC的可调节多相时钟产生电路

设计了一种应用于10位80 MS/s流水线A/D转换器的可调节多相时钟产生电路.该电路采用一种电流镜结构,通过调节可变电阻的阻值来实现对单位延迟时间的精确控制.芯片采用IBM 0.13μm CMOS工艺实现,电源电压为2.5 V.在各种条件下仿真所得的最大延迟时间偏差为4%,时钟电路功耗为0.68 mW.仿真结果表明,该时钟产生电路适用于高速流水线A/D转换器.     

一款用于LED驱动芯片的CMOS振荡器

研究一款适用于LED驱动芯片的CMOS振荡器电路.其工作原理是在环路振荡器中加入恒定电流源,以恒定电流对电容充电、MOS管对电容快速放电以产生锯齿波再经锁存器产生周期脉冲信号.与传统的环路振荡器相比,此电路的优点是振荡频率精确、波形稳定,振荡频率在一定的电源电压范围内对电源电压变化不敏感.此振荡器电路已经成功应用于一款LED驱动芯片中.     

用于10M/100M以太网的NRZ数据时钟恢复电路

文中采用双环系统,基于改进的Hogge鉴相器,差分电荷泵,以及一个四级环形压控振荡器实现了一种全集成的CMOS时钟恢复电路,时钟恢复的频率为125 MHz,该电路最大程度上的减小了电荷注入、电荷分享等寄生效应的影响.增加一个偏置电路使各模块的工作电源电压降低到2.94 V.整个芯片的功耗降低10%.     

与工艺、电源电压和温度无关的低功耗振荡环设计

分析了传统片外时钟和片内时钟各自的特点和应用背景,在Chartered 0.35μm CMOS工艺下实现了一个低功耗PVT(工艺、电源电压、温度无关)振荡环,对片内时钟的稳定性和功耗进行改进。该振荡环无需精准的电压源,采用了误差补偿技术,通过偏置电压和延时单元的相互补偿,使得振荡频率对于工艺、温度和电源电压均有较大的容差能力。并且由于针对延时单元补偿的方式,令周期大小易于调整。蒙特卡罗仿真显示,工艺误差引起的偏差要比补偿前的偏差减小了60%。流片测试结果表明,在工作温度变化范围0~100°C时,振荡环输出的频率偏差为±3.22%;在电源电压变化范围为2.8~3.8 V时,振荡环输出的频率偏差为±3.36%;在电源电压3.3 V的情况下,整个芯片消耗的电流为950μA。     

一种超低功耗RC振荡器设计

基于SMIC 55 nm CMOS工艺,设计并制备了工作在1.2V电源电压下的超低功耗RC振荡器.该振荡器主要包括运算放大器、压控振荡器(VCO)、基准电流源、低温漂电阻和可修调开关电容以及非交叠时钟产生电路.该振荡器用工作在亚阈值区的运算放大器和VCO取代了传统单比较器型RC振荡器中的比较器,显著降低了功耗;用开关电容取代了充放电电容,并且将输出时钟的频率转换成了阻抗,与参考电阻进行比较.利用负反馈环路锁定了输出时钟信号频率,从而得到了稳定的时钟信号.测试结果表明,1.2V电源电压、27℃环境下,该RC振荡器的输出时钟信号频率为32.63 kHz,功耗为65 nW;在-10 ～ 100℃,其温度系数为1.95×10-4/℃;在0.7～1.8 V电源电压内,其电源电压调整率为3.2％/V.芯片面积为0.168 mm2.     

一种高精度高稳定性的片内振荡电路设计

作为系统时钟源,振荡电路的频率特性会影响芯片工作性能。为提高片内振荡器输出时钟的精度及稳定性,设计一种基于RC结构的振荡电路。该振荡电路采用带隙基准产生电容充电电流及基准电压,通过调整镜像管比例进行频率粗调校正,通过调整基准电压大小和温度系数以实现频率细调校正及温度特性校正。电路基于55 nm CMOS工艺设计实现,仿真结果表明,典型条件下电路工作输出为30 MHz,50%占空比时钟,在1.6～5.5 V、-40～125℃工作范围内,振荡频率偏移位0.6%以内,中心校准精度为0.5%,可作为片内高精度时钟源或参考时钟。     

一种CMOS电流控制振荡器的分析与设计

提出了一种结构简单的CMOS电流控制模式振荡器.该电路充分利用系统内部基准电流源产生的电流信号对电容进行充放电,在5 V电源电压下,经过控制电路作用后,上升时间和下降时间非常小,使产生的输出振荡波形更接近理想矩形波;通过调节基准源电流信号或者电路中电容值的大小,可以调节振荡输出波形的频率和占空比.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.