栅控Tc的高温氧化物超导体场效应晶体管

本文提出了栅控超导临界温度Ｔｃ的高温氧化物超导体场效应晶体管的原理，建立了场控Ｔｃ的方程，估算和分析了器件特性，对发展和研究ＨＴＯＳｓ－ＭＯＳｓＦＥＴ的器件和电路有积极的指导意义。     

短沟道MOSFET器件物理模型研究

通过求解经修正的二维泊松方程，并考虑了主要的短沟效应和高场效应，得到一个描述短沟道ＭＯＳＦＥＴ器件Ｉ－Ｖ特性的统一物理模型。该模型适用于包括亚阈区在内的不同工作区域，对０．８μｍ和１．４μｍ器件的漏极电流特性能较好地描述，可应用于亚微米、深亚微米级ＭＯＳＦＥＴ的电路模拟。     

GaAs FET大信号模型与参数提取

提出适用于功率ＧａＡｓＦＥＴ的新的大信号模型以及脉冲Ｉ－Ｖ和小信号Ｓ参数相结合的整体化参数提取方法。用研制出的大信号建模软件提取了功率ＦＥＴ的大信号模型参数，并用该模型模拟和测量了器件大信号Ｓ参数，结果完全一致。     

GaAsFET大信号模型与参数提取

提出适用于功率ＧａＡｓＦＥＴ的新的大信号模型以及脉冲Ｉ－Ｖ和小信号Ｓ参数相结合的整体化参数提取方法。用研制出的大信号建模软件提取了功率ＦＥＴ的大信号模型参数，并用该模型模拟和测量了器件大信号Ｓ参数，结果完全一致。     

通用于GaAs MESFET和HEMT的精确I_(ds)模型

回顾了十年来国内外在ＧａＡｓＦＥＴ大信号模型方面的研究进展，提出了可用于ＭＥＳＦＥＴ和ＨＥＭＴ的统一的精确沟道电流模型。     

通用于GaAsMESFET和HEMT的精确Ids模型

回顾了十年来国内外在ＧａＡｓＦＥＴ大信号模型方面的研究进展，提出了可用于ＭＥＳＦＥＴ和ＨＥＭＴ的统一的精确沟道电流模型。     

适用于短沟道MOSFET亚阈值沟道长度调制的简单二维模型

适用于短沟道ＭＯＳＦＥＴ亚阈值沟道长度调制的简单二维模型＝Ａｓｉｍｐｌｅｔｗｏ－ｄｉｍｅｎｓｉｏｎａｌｍｏｄｅｌｆｏｒｓｕｂｔｈｒｅｓｈｏｌｄｃｈａｎｎｅｌ－ｌｅｎｇｔｈｍｏｄｕｌａｔｉｏｎｉｎｓｈｏｒｔ－ｃｈａｎｎｅｌＭＯＳＦＥＴ＇ｓ［刊，英］／Ｇ...     

微波场效应功率放大器的CAD技术

微波场效应晶体管功率放大器的计算机辅助设计与分析技术关键是微波非线性电路的分析方法和功率场效应管器件模型的建立。本文在概述微波ＧａＡｓ ＦＥＴ ＣＡＤ、ＣＡＡ基本原理基础上，着重阐述了分析微波非线性电路的频域谐波平衡法，接着介绍了一个直接从ＧａＡｓＦＥＴ小信号Ｓ参数建立其大信号模型的新方法，上述技术可望在微波功率场效应放大器的批量研制中得到应用。     

短沟道MOSFET解析物理模型

本文基于修正的二维泊松方程导出了适用于深亚微米ＭＯＳＦＥＴ的值电压解析模型,并进而通过反型区电荷统一表达式并考虑到载流子速度饱和、ＤＩＢＬ、相关迁移率、反型层电容和沟道长度调制等主要小尺寸与高场效应,最后得以了较为准确、连续和可缩小的漏极电流模型,模型输出与华晶等榈测试ＭＩＮＩＭＯＳ模拟结果较为吻合,可用于ＶＬＳＩ器件与电路预测模拟。     

在FEA中使用的MOSFET技术

本文对以ＭＯＳＦＥＴ（金属氧化物硅场效应薄膜晶体管）技术提高ＦＥＤ（场致发射显示）等器件的ＦＥＡ（场致发射阵列）阴极发射电流的稳定性作了说明,并就对ＭＯＳＦＥＴ技术的改进作了介绍。     

超导场效应器件的统一Y参数和小信号等效电路

本文基于超导场效应的小信号传输线模型的电流电压方程，建立了各种电路组态的本征的统一Ｙ参数和小信号等效电路，提出了频变电阻、频变电感和频变电容的概念，为研究各类超导场效应器件和电路的高频特性和动力学提供了有力的基础．     

Small signal properties of field effect devices

The small signal properties of field effect devices are treated analytically. The analysis is based upon an active, distributed transmission line analogy to the conductive channel of field effect devices. Within the limitations of the gradual channel approximation, a general analysis is presented which is applicable to both junction and MOS field effect devices. Equivalent circuits are obtained which describe field effect device characteristics in the region below saturation as well as in the current saturation region. Effects of parasitic elements on the terminal y parameters in practical devices are considered. Specific device models are considered for junction devices and MOS devices and the more important equivalent circuit parameters are evaluated in terms of the dc terminal voltages.     

超导－半导场效应晶体管理论分析

分析了超导－半导场效应晶体管的工作原理，利用电阻分流模型对其性能进行了讨论，并给出了详细的计算结果。其中认为沟道中载流子分布符合费米－狄拉克分布函数，并考虑了沟道载流子迁移率的变化。     

超导－半导场效应晶体管理论分析

分析了超导－半导场效应晶体管的工作原理，利用电阻分流模型对其性能进行了讨论，并给出了详细的计算结果。其中认为沟道中载流子分布符合费米－狄拉克分布函数，并考虑了沟道载流子迁移率的变化。     

高温超导场效应晶体管的动态导纳模拟

本文基于我们建立的超声场效应器件的统一信号理论,引进了动态导纳参数。对高温超导场效应晶体管的低频电流－电压特性进行了数值模拟。分别对推广的二流体模拟中正常电流和超导电流在一定的条件下随栅电压、漏电压、温度和频率的变化进行了分析。给出了一种高温超导场效应器件低频特性新的研究方法。     

Nonlinear analysis of microwave superconductor devices usingfull-wave electromagnetic model

This paper presents a full electromagnetic wave analysis for modeling the nonlinearity in high temperature superconductor (HTS) microwave and millimeter-wave devices. The HTS nonlinear model is based on the Ginzburg-Landau theory. The electromagnetic fields associated with the currents on the superconducting structure are obtained using a three-dimensional full wave solution of Maxwell's equations. A three-dimensional finite-difference time-domain algorithm simultaneously solves the resulting equations. The entire solution is performed in time domain, which is a must for this type of nonlinearity analysis. The macroscopic parameters of the HTS, the super fluid penetration depth and the normal fluid conductivity, are calculated as functions of the applied magnetic field. The nonlinear propagation characteristics for HTS transmission line, including the effective dielectric constant and the attenuation constant, are calculated, As the power on the transmission line increases, the phase velocity decreases and the line losses increase. The nonlinearity effects on the current distributions inside the HTS, the electromagnetic field distributions, and the frequency spectrum are also analyzed     

Full-wave characterization of high-Tcsuperconducting transmission lines

A full-wave numerical analysis is applied to accurately characterize superconducting transmission lines embedded in a layered dielectric medium. A volume integral equation formulation is developed by using a spectral domain dyadic Green's function for stratified media. Galerkin's method with rooftop basis functions for the electric field distribution inside the superconductor is then employed to solve the complex propagation constant. The thickness of the superconducting film is arbitrary in this analysis, and the formulation rigorously accounts for the anisotropy of the superconducting film. The propagation characteristics of a superconducting microstrip transmission line with a thin dielectric buffer layer are investigated. A superconducting stripline configuration with an air gap is also studied     

Picosecond nodal testing of centimeter-size superconducting Nb microstrip interconnects

We have implemented a low-temperature electro-optic sampling system for non-invasive, nodal testing of superconducting Nb integrated circuits. With submillivolt sensitivity and a subpicosecond temporal response, this system has been used to perform nodal analysis on rapid-single-flux quantum (RSFQ) devices and superconducting microstrip interconnects. Here we demonstrate that by measuring the propagation of 6-ps-wide pulses at various test nodes, we are able to fully characterize a superconducting microstrip waveguide the size of an entire chip. The transmission line was selected not only to perform the first complete characterization of a superconducting microstrip, but also to demonstrate full nodal testing of a foundry-fabricated RSFQ integrated circuit. Finally, our results provided much-needed feedback for improving computer simulations of superconducting digital circuits.     

基于FDTD的约瑟夫森结与超导传输线协同分析方法

为实现高性能处理器,超导RSFQ（快速单磁通量子）电路被提出.该电路主要由超导约瑟夫森结和超导无源传输线组成,对其建模分析是超导RSFQ电路设计的基础.本文提出了基于FDTD（时域有限差分）的约瑟夫森结与超导传输线的协同分析方法.该方法采用FDTD数值方法求解超导传输线的电报方程.在超导传输线与约瑟夫森结交界处的非线性边界条件上,采用了Newton-Raphson迭代算法.数值结果表明,本文提出的约瑟夫森结和超导传输线的协同分析方法与WRspice仿真软件相比具有相同精度,且运算效率显著提高.     

5V CMOS中GGNMOS ESD失效电流和沟道长度正向关系的分析

Contrary to general understanding,a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process.Such a phenomenon in a gate-grounded NMOSFET(GGNMOS) was investigated,and the current spreading effect was verified as the predominant factor. Due to transmission line pulse(TLP) measurements and Sentaurus technology computer aided design(TCAD) 2-D numerical simulations,parameters such as current gain,on-resistance and power density were discussed in detail.